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DES CIRCUITS INTEGRES A DMOS SONT PROPOSES POUR LA COMMUTATION TELEPHONIQUE.LILEN H.1975; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1975; NO 203; PP. 57-60Article

Advanced DMOS memory cell using a new isolation structureTERADA, K; ISHIJIMA, T; SUZUKI, S et al.I.E.E.E. transactions on electron devices. 1984, Vol 31, Num 9, pp 1308-1313, issn 0018-9383Article

NONUNIFORM PULSE CODE MODULATION ENCODER USING DOUBLE POLYSILICON TECHNOLOGYCOMPEERS J; DE MAN HJ.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. SC13; NO 3; PP. 298-302; BIBL. 10 REF.Article

A THEORETICAL AND EXPERIMENTAL STUDY OF DMOS ENHANCEMENT/DEPLETION LOGIC. = ETUDE THEORIQUE ET EXPERIMENTALE DE LA LOGIQUE MOS A DOUBLE DIFFUSION UTILISANT DES TRANSISTORS A ENRICHISSEMENT ET A DEPLETIONDECLERCQ MJ; LAURENT T.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 3; PP. 264-270; BIBL. 17 REF.Article

COMPLEMENTARY DMOS PROCESS FOR LSI.MASUHARA T; MULLER RS.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 4; PP. 453-458; BIBL. 3 REF.Article

PROCESSES FOR MOS IC'S.WAKEFIELD R.1975; ELECTRON. PACKAG. PRODUCT.; U.S.A.; DA. 1975; VOL. 15; NO 7; PP. 169-172Article

PIEZOELECTRIC DMOS STRAIN TRANSDUCERS.YEH KW; MULLER RS.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 9; PP. 521-522; BIBL. 8 REF.Article

NEW V-GROOVE DOUBLE-DIFFUSED M.O.S (V.D.M.O.S.).YU SY; OU YANG P.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 23; PP. 605; BIBL. 5 REF.Article

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