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BEDINGUNGEN UND KRITERIEN ZUR RATIONALISIERUNG IN DER SILIZIUM-PLANAR-TECHNIK. IV. DIE MECANISCHE STABILITAET DER SUBSTRATSCHEIBE ALS TECHNOLOGISCHE BASIS DES SILIZIUM-PLANAR-PROZESSES = CONDITIONS ET CRITERES POUR LA RATIONALISATION DANS LA TECHNIQUE PLANAR DU SI. IV. LA STABILITE MECANIQUE DU DISQUE SUPPORT COMME BASE TECHNOLOGIQUE DU PROCESSUS PLANAR DU SIKUNZE M; MASLOV A.1972; FEINGERAETETECHNIK; DTSCH.; DA. 1972; VOL. 21; NO 7; PP. 314-315; BIBL. 10 REF.Serial Issue

THE COMPONENTS OF COMPUTERS. VI. MAGNETIC MAINFRAME MEMORIESMAZDA FF.1972; ELECTRON. COMPON.; G.B.; DA. 1972; VOL. 13; NO 22; PP. 1112-1118; BIBL. 1 P.Serial Issue

FINITE ELEMENT ANALYSIS OF PLANAR MICROWAVE NETWORKSSILVESTER P.1973; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1973; VOL. 21; NO 2; PP. 104-108; BIBL. 10 REF.Serial Issue

SIMPLIFIED 12 GHZ LOW-NOISE, CONVERTER WITH MOUNTED PLANAR CIRCUIT IN WAVEGUIDEKONISHI Y; UENAKADA K; YAZAWA N et al.1973; N.H.K. LAB. NOTE; JAP.; DA. 1973; NO 161; PP. 1-8; BIBL. 2 REF.Serial Issue

APPROXIMATION TO IMPURITY ATOM DISTRIBUTION FROM A TWO-STEP DIFFUSION PROCESSBHATTACHARYYA AB; BASAVARAJ TN.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 5; PP. 509-510; BIBL. 10 REF.Serial Issue

LA TECHNOLOGIE POLY-PLANAR ET SON APPLICATION A UNE PROM DE 2048 BITSLILEN H.1973; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1973; NO 167; PP. 32-33Serial Issue

RETE PASSA- TUTTO A RISUONATORE UNICO A PARAMETRI DISTRIBUITI = RESEAU PASSE-TOUT A RESONATEUR UNIQUE A PARAMETRES REPARTISBIFFI GENTILI G; BRAMANTI M.1973; ALTA FREQ.; ITAL.; DA. 1973; VOL. 42; NO 3; PP. 160-165; BIBL. 18 REF.Serial Issue

A HIGH-FREQUENCY VARIABLE DELAY LINEJAFFE JM.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 12; PP. 1292-1294; BIBL. 3 REF.Serial Issue

MINIATURE PRESSURE TRANSDUCERS WITH A SILICON DIAPHRAGMGIELES ACM; SOMERS GHJ.1973; PHILIPS TECH. REV.; NETHERL.; DA. 1973; VOL. 33; NO 1; PP. 14-20Serial Issue

A LINEAR VOLTAGE-TUNABLE DISTRIBUTED NULL DEVICEBENZ HF; MATTAUCH RJ.1972; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 6; PP. 499-503; BIBL. 4 REF.Serial Issue

COMMITTEE J-1 ON ELECTRONICS-PLUNGING INTO THE MICRO WORLD OF SEMICONDUCTOR ELECTRONICSSCHUMANN PA JR; SCACE RI.1973; A.S.T.M. STANDARD. NEWS; U.S.A.; DA. 1973; VOL. 1; NO 4; PP. 20-23Serial Issue

ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICONKIRCHER CJ; MAYER JW; TU KN et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 2; PP. 81-83; BIBL. 12 REF.Serial Issue

FABRICATION AND PROPERTIES OF PLANAR X-BAND GUNN-EFFECT DEVICESULLRICH D.1972; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1972; VOL. 26; NO 10; PP. 455-456; ABS. ALLEM.; BIBL. 10 REF.Serial Issue

EFFECT OF LATERAL DIFFUSION ON PLANAR RESISTORSGUPTA ML; BHATTACHARYYA AB.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 281-283; BIBL. 7 REF.Serial Issue

DISPOSITIFS A MODULATION PAR INJECTION UTILISES COMME ELEMENTS DES CIRCUITS INTEGRESDEDYULIN KA; KOVALEV AV; NEGODENKO ON et al.1973; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1973; VOL. 16; NO 4; PP. 56-61; BIBL. 6 REF.Serial Issue

LUMPED COMPONENTS FOR MICROWAVE FREQUENCIESAITCHISON CS.1971; PHILIPS TECH. REV.; NETHERL.; DA. 1971; VOL. 32; NO 9-12; PP. 305-314; BIBL. 8 REF.Serial Issue

DISPOSITIFS NON LINEAIRES A STRUCTURES PLANARSAPOSTOLOV AI; KOBTSEV YU D.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 10; PP. 67-69; BIBL. 1 REF.Serial Issue

HERSTELLUNG VON OXIDEN, NITRIDEN UND OXIDISCHEN GLAESERN FUR HALBLEITERBAUELEMENTE UND INTEGRIERTE SCHALTUNGEN MIT CVD-VERFAHREN = FABRICATION D'OXYDES, DE NITRURES ET DE VERRES D'OXYDES POUR DES DISPOSITIFS A SEMICONDUCTEURS ET DES CIRCUITS INTEGRES A L'AIDE DU PROCEDE DE DEPOT PAR VOIE CHIMIQUE EN PHASE VAPEURLANGHEINRICH W.1973; V.D.I.-Z.; DTSCH.; DA. 1973; VOL. 115; NO 1; PP. 47-52; BIBL. 22 REF.Serial Issue

CHEMICALS FOR SEMICONDUCTOR PROCESSINGCLARK KG.1972; ELECTRON., COMPON.; G.B.; DA. 1972; VOL. 13; NO 18; PP. 869-874 (4 P.)Serial Issue

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