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SIPOS, A NEW TECHNOLOGY FOR SILICON SURFACE PASSIVATION.AOKI T; HAYASHI H; MATSUSHITA T et al.1976; J. ELECTRON. ENGNG; JAP.; DA. 1976; NO 109; PP. 44-48Article

HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF THE SIPOS PROCESS.MATSUSHITA T; AOKI T; OTSU T et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 167-170; BIBL. 6 REF.Conference Paper

HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF THE SIPOS PROCESS.MATSUSHITA T; AOKI T; OHTSU T et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 826-830; BIBL. 11 REF.Article

A SILICON HETEROJUNCTION TRANSISTORMATSUSHITA T; OH UCHI N; HAYASHI H et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 549-550; BIBL. 9 REF.Article

OXYGEN DETERMINATION IN SIPOS USING A DIFFERENTIAL THICKNESS MEASUREMENTWIDMER AE; HITCHMAN ML.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 10; PP. 1723-1725; BIBL. 4 REF.Article

SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) PASSIVATION TECHNOLOGY.MATSUSHITA T; AOKI T; OTSU T et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 35-40; BIBL. 5 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

SEMI-INSULATING POLYCRYSTALLINE-SILICON (SIPOS) FILMS APPLIED TO MOS INTEGRATED CIRCUITS.MOCHIZUKI H; AOKI T; YAMOTO H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 41-48; BIBL. 6 REF.; (CONF. SOLID STATE DEVICES, 7. PROC.; TOKYO)Conference Paper

APPLICATION DES DEPOTS DE SI POLYCRISTALLIN DOPES EN VUE DE LA REALISATION DE CIRCUITS INTEGRES COMPACTSDE BREBISSON M.1979; ; FRA; DA. 1979; DGRST-77 7 0977; 2 FASC., 26+ (88) F.: ILL.; 30 CM; BIBL. 12 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

CHARACTERISTICS OF CO2 DEPOSITED SIPOS FILMSZOMMER N.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2056-2063; BIBL. 12 REF.Article

The influence of annealing on the capacitance-voltage characteristics of metal/SIPOS/silicon capacitorsBURTE, E. P.Solid-state electronics. 1988, Vol 31, Num 12, pp 1663-1666, issn 0038-1101Article

On the blocking behaviour of mesa high voltage power devices passivated by semi-insulating polycrystalline silicon filmsBURTE, E. P.Thin solid films. 1989, Vol 168, Num 1, pp 41-50, issn 0040-6090Article

Interface effects of SIPOS passivationTONG, D. W; BENJAMIN, J. L; RON VAN DELL, W et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 6, pp 779-787, issn 0018-9383Article

Characterisation and modelling of SIPOS on silicon high-voltage devicesSANDOE, J. N; HUGHES, J. R; SLATTER, J. A. G et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 6, pp 281-284, issn 0143-7100Article

Interface trap density near midgap of SIPOS films deposited on crystalline siliconBURTE, E. P.Journal of the Electrochemical Society. 1988, Vol 135, Num 4, pp 1017-1019, issn 0013-4651Article

The effect of an interfacial layer on the blocking behaviour of mesa high-voltage power devices passivated by semi-insulating polycrystalline silicon filmsBURTE, E. P; SCHULZE, G. H; TURSKY, W et al.Solid-state electronics. 1991, Vol 34, Num 4, pp 345-349, issn 0038-1101, 5 p.Article

POWER DEVICES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 725-740; ABS. FRE; BIBL. DISSEM.Conference Paper

High-voltage planar devices using field plate and semi-resistive layersJAUME, D; CHARITAT, G;; REYNES, J. M et al.I.E.E.E. transactions on electron devices. 1991, Vol 38, Num 7, pp 1681-1684, issn 0018-9383Article

High resolution electron microscopic and spectroscopic characterization of semi-insulating polycrystalline silicon and its interface with single-crystal siliconWONG, J; JEFFERSON, D. A; SPARROW, T. G et al.Applied physics letters. 1986, Vol 48, Num 1, pp 65-67, issn 0003-6951Article

The volume fraction of crystalline silicon in semi-insulating polycrystalline silicon (SIPOS)GREENBERG, B; MARSHALL, T.Journal of the Electrochemical Society. 1988, Vol 135, Num 9, pp 2295-2299, issn 0013-4651Article

The conduction properties of plasma-enhanced low-pressure chemical vapour deposited (PELPCVD) SIPOSENGLAND, P. J; SIMMONS, J. G.Solid-state electronics. 1989, Vol 32, Num 2, pp 131-135, issn 0038-1101Article

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