Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("TECHNOLOGY")

Filter

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 200895

  • Page / 8036

Export

Selection :

  • and

CARACTERISTIQUES ACTUELLES ET EVOLUTION DE LA TECHNOLOGIE SILICIUM SUR ISOLANT (SSI)BOREL J.1978; ONDE ELECTR.; FRA; DA. 1978; VOL. 58; NO 12; PP. 812-817; ABS. ENG; BIBL. 25 REF.Article

MOS POWER VS BIPOLAR-THE DESIGNER WINSHEFTMAN G.1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 12; PP. 131-137Article

TECHNOLOGY OF A NEW N-CHANNEL ONE-TRANSISTOR EAROM CELL CALLED SIMOS.SCHEIBE A; SCHULTE H.1977; I.E.E.E. TRANS-ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 5; PP. 600-606; BIBL. 7 REF.Article

EVAPORATION DE COUCHES ALUMINIUM-SILICIUM POUR LA METALLISATION DE CIRCUITS BIPOLAIRES ET MOS.DECOSTERD JP.1976; VIDE; FR.; DA. 1976; NO 183 SUPPL.; PP. 153-156; ABS. ANGL.; BIBL. 2 REF.; (MATER. TECHNOL. MICROELECTR. TENDANCES ACTUELLES. COLLOQ. C.R.; MONTPELLIER; 1976)Conference Paper

A HIGH-PERFORMANCE LSI TECHNOLOGY: CMOS SILICON-ON-SAPPHIRESMITH DEH.1981; GEC J. SCI. TECHNOL. (1972); ISSN 0302-2587; GBR; DA. 1981; VOL. 47; NO 2; PP. 55-61; BIBL. 6 REF.Article

MORE POWERFUL SEMIS- AND MORE OF THEM IN MOSHEFTMAN G.1979; ELECTRON. DESIGN.; USA; DA. 1979; VOL. 27; NO 7; PP. 96-99Article

TECHNOLOGISCHER STAND UND ZUKUENFTIGE ENTWICKLUNG IN DER MIKROELEKTRONIK. = L'ETAT ACTUEL ET LE DEVELOPPEMENT FUTUR DE LA MICROELECTRONIQUESTEIN KU.1976; ELEKTROTECH. U. MASCH.-BAU; OESTERR.; DA. 1976; VOL. 93; NO 6; PP. 240-248; BIBL. 32 REF.Article

LOCMOS LENDS ITSELF TO FULL SCALE INTEGRATION.BEER A.1977; NEW ELECTRON; G.B.; DA. 1977; VOL. 10; NO 3; PP. 28-32 (3P.)Article

ISOPLANAR INTEGRATED INJECTION LOGIC: A HIGH-PERFORMANCE BIPOLAR TECHNOLOGY.HENNIG F; HINGARH HK; O'BRIEN D et al.1977; I.E.E.E.J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 2; PP. 101-109; BIBL. 9 REF.Article

C2L: A NEW HIGH-SPEED HIGH-DENSITY BULK CMOS TECHNOLOGY.DINGWALL AGF; STRICKER RE.1977; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1977; VOL. 12; NO 4; PP. 344-349; BIBL. 8 REF.Article

NEW MOS PROCESSES SET SPEED, DENSITY RECORDS.ALTMAN L.1977; ELECTRONICS; U.S.A.; DA. 1977; VOL. 50; NO 22; PP. 92-94Article

TECHNOLOGIE MOS AVEC UNE CHARGE POSITIVE NEGLIGEABLEHAYASHI Y; YOSHIHARA H.1976; BULL. ELECTROTECH. LAB.; JAP.; DA. 1976; VOL. 40; NO 4-5; PP. 429-432; ABS. ANGL.Article

POWER COMPONENTS MELD THE STRENGTHS OF MOS, BIPOLAROHR S.1980; ELECTRON. DESIGN; USA; DA. 1980; VOL. 28; NO 14; PP. 65-71Article

MISCHTECHNOLOGIEN IM VERGLEICH: BIFET UND BIMOS = COMPARAISON DES TECHNOLOGIES MIXTES: BIFET ET BIMOS1978; ELEKTRONIK; DEU; DA. 1978; VOL. 27; NO 10; PP. 59-61; BIBL. 1 REF.Article

SECONDER FOR BI-POLAR TECHNOLOGY. A RE-EVALUATION.ROBERTS DH.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 2; PP. 18-21; BIBL. 5 REF.Article

ZUR ROLLE VON INFORMATIONSTECHNOLOGIEN BEI DER BESCHLEUNIGUNG DES WISSENSCHAFTLICH-TECHNISCHEN FORTSCHRITTS UND DER UMSETZUNG DER OEKONOMISCHEN STRATEGIE = SUR LE ROLE DES TECHNOLOGIES DE L'INFORMATION DANS L'ACCELERATION DU PROGRES SCIENTIFIQUE ET TECHNIQUE, ET DANS LA TRANSFORMATION DE LA STRATEGIE ECONOMIQUEGROSS B; LEMGO K.1982; INFORMATIK; ISSN 0019-9915; DDR; DA. 1982; VOL. 29; NO 3; PP. 40-44; BIBL. 17 REF.Article

MOS BI-POLAR. THE DEBATE.OWEN SJT.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 2; PP. 3-4Article

PROPOSER FOR MOS TECHNOLOGY. OPENING STATEMENT.CARLSON RS.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 2; PP. 5-8Article

SECONDER FOR MOS TECHNOLOGY. MOS A MAJOR FACTOR.FORTE S.1974; MICROELECTRONICS; G.B.; DA. 1974; VOL. 6; NO 2; PP. 14-17Article

METODI LITOGRAFICI PER LA TECNOLOGIA PLANARE. II. LITOGRAFIA ELETTRONICA A SCANSIONE, RUOLO DELLE VARIE TECNICHE LITOGRAFICHE. = METHODES LITHOGRAPHIQUES POUR LA TECHNOLOGIE PLANAIRE. LITHOGRAPHIE ELECTRONIQUE A BALAYAGE, ROLE DES DIVERSES TECHNIQUES LITHOGRAPHIQUESARMIGLIATO A; COCITO M; MERLI PG et al.1977; ELETTRON. E TELECOMMUNIC.; ITAL.; DA. 1977; VOL. 26; NO 3; PP. 107-122; ABS. ANGL.; BIBL. 27 REF.Article

Les spécificités du recrutement dans les start-up liées aux NTICCORBEL, P.Congrès de l'AGRH. 2001, Vol. 1, 341-353Conference Paper

NEW CMOS TECHNOLOGIESHOEFFLINGER B; ZIMMER G.1980; CONF. SER.-INST. PHYS.; ISSN 0305-2346; GBR; DA. 1980 PUBL. 1981; NO 57; PP. 85-139; BIBL. 2 P.Conference Paper

THE N+-IPOS SCHEME AND ITS APPLICATIONS TO IC'S.ARITA Y; KATO K; SUDO T et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 6; PP. 756-757; BIBL. 8 REF.Article

L'IMPLANTATION IONIQUE APPLIQUEE AUX TECHNOLOGIES A TRANSISTORS MOS.GUERNET G; GARCIA M; BERNARD J et al.1976; ACTA ELECTRON.; FR.; DA. 1976; VOL. 19; NO 2; PP. 117-128; ABS. ANGL. ALLEM.; BIBL. 14 REF.Article

THYRISTORS MESA OR PLANAR TECHNOLOGY.1978; NEW ELECTRON.; G.B.; DA. 1978; VOL. 11; NO 4; PP. 61-62Article

  • Page / 8036