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ETUDE DES CONFIGURATIONS FONDAMENTALES 5S25P4 DE TE I ET I II PAR L'OBSERVATION DES RAIES MULTIPOLAIRES INFRAROUGES.MORILLON C; VERGES J.1975; PHYS. SCRIPTA; SUEDE; DA. 1975; VOL. 12; NO 3; PP. 145-156; ABS. ANGL.; BIBL. 23 REF.Article

TRANSITIONS BETWEEN THE LEVELS OF THE GROUND CONFIGURATION IN TEII.ERIKSSON KBS.1974; J. OPT. SOC. AMER.; U.S.A.; DA. 1974; VOL. 64; NO 9; PP. 1272; BIBL. 2 REF.Article

FORMATION D'UNE COUCHE ULTRADISPERSEE DE GERMANIUM LORS D'UN BOMBARDEMENT IONIQUEZAKIROV GG; KHAJBULLIN IB; ZARIPOV MM et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 2; PP. 232-234; BIBL. 7 REF.Article

DAMAGE IN GALLIUM ARSENIDE CRYSTALS PRODUCED BY ION IMPLANTATION, ABRASION AND BALL-MILLING.TUNKASIRI T; LEWIS D.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 8; PP. 1367-1374; BIBL. 18 REF.Article

EFFECTIVE-OPERATOR INTERPRETATION OF THE HYPERFINE STRUCTURE IN THE 5P26P CONFIGURATION OF 52125TE IIAUGUSTYNIAK L; WEREL K; SPECTOR N et al.1982; J. OPT. SOC. AM. (1930); ISSN 0030-3941; USA; DA. 1982; VOL. 72; NO 4; PP. 493-498; BIBL. 16 REF.Article

THE 4D85S, 4D85P, AND 4P54D10 CONFIGURATIONS IN THE TE VIII SPECTRUM AND THE 4D96S CONFIGURATION IN THE TE VII SPECTRUMJOSHI YN; VAN KLEEF TAM.1980; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1980; VOL. 58; NO 8; PP. 1119-1125; ABS. FRE; BIBL. 19 REF.Article

4D95S-4D95P TRANSITIONS IN SB VI AND TE VIIVAN KLEEF TAM; JOSHI YN.1979; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1979; VOL. 57; NO 8; PP. 1073-1080; ABS. FRE; BIBL. 11 REF.Article

LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS.CAMPISANO SU; CATALANO I; FOTI G et al.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 2; PP. 485-488; BIBL. 13 REF.Article

EXTINCTION THERMIQUE DE LA LUMINESCENCE DANS LES SOLUTIONS DES SELS DE TEBELYJ MU; KUSHNIRENKO I YA; LEONT'EV AB et al.1973; OPT. I SPEKTROSK.; S.S.S.R.; DA. 1973; VOL. 34; NO 4; PP. 715-721; BIBL. 24 REF.Serial Issue

Radiative lifetime of a bound excited state of Te-ELLMANN, A; SCHEF, P; PEGG, D. J et al.Physical review letters. 2004, Vol 92, Num 25, pp 253002.1-253002.4, issn 0031-9007, 1Article

Electron microscope and electron diffraction studies of amorphization phenomena in Ge implanted with Te ionsPASHOV, N; KASTNER, G; KALITZOVA, M et al.Physica status solidi. A. Applied research. 1984, Vol 84, Num 1, pp K23-K27, issn 0031-8965Article

HYPERFINE STRUCTURE ANALYSIS OF SOME TE II LINESWEREL K; AUGUSTYNIAK L.1981; PHYS. SCR.; ISSN 0031-8949; SWE; DA. 1981; VOL. 23; NO 5; PP. 856-858; BIBL. 5 REF.Article

THERMAL BEHAVIOR OF LASER-ANNEALED GAAS STUDIED BY HELIUM BACKSCATTERING SPECTROSCOPYAMANO J; PIANETTA PA; STOLTE CA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 948-949; BIBL. 11 REF.Article

THE 4D95D AND 4D96S CONFIGURATIONS IN SBVI AND THE 4D95D CONFIGURATION IN TEVIIJOSHI YN; VAN KLEEF TAM.1979; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1979; VOL. 57; NO 11; PP. 1982-1989; ABS. FRE; BIBL. 10 REF.Article

ANALYSIS OF 4D9-4D85P TRANSITIONS IN SB VII AND TE VIII AND THE IONIZATION LIMITS OF SB VI AND TE VIIVAN KLEEI TAM; TOSHI YN.1979; J. OPT. SOC. AMER.; USA; DA. 1979; VOL. 69; NO 1; PP. 132-140; BIBL. 21 REF.Article

ETUDE DU RECUIT ISOCHRONE DE INSB P IRRADIE PAR DES IONS D'ENERGIES MOYENNESKORSHUNOV AB; KUZNETSOV GM; MAKAROV AG et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 938-943; BIBL. 17 REF.Article

STRUCTURE CHANGE FEATURES IN LASER IRRADIATED AMORPHOUS GEVITALI G; MERTOLOTTI M; ZAMMIT U et al.1982; PHYS. LETT. B; ISSN 0370-2693; NLD; DA. 1982; VOL. 89; NO 4; PP. 199-202; BIBL. 21 REF.Article

DETERMINATION DES DEPLACEMENTS ISOTOPIQUES DES ISOTOPES IMPAIRS 123 ET 125 DU TELLURE PAR RAPPORT AUX ISOTOPES PAIRS 122, 124 ET 126 ("ODD-EVEN STAGGERING")LECORDIER R.1979; PHYS. LETTERS, A; NLD; DA. 1979; VOL. 72; NO 4-5; PP. 327-328; BIBL. 7 REF.Article

DEPLACEMENT ISOTOPIQUE RELATIF DANS LES RAIES LAMBDA =4048,9 A, LAMBDA =5449,8 A ET LAMBDA =5479,1 A DU SPECTRE II DU TELLURE.LECORDIER R; HELBERT JM.1978; PHYSICA B+C; PAYS-BAS; DA. 1978; VOL. 94; NO 1; PP. 125-133; ABS. ANGL.; BIBL. 20 REF.Article

DYNAMIC BEHAVIOR OF MODE-LOCKED ND: YAG LASER ANNEALING IN ION-IMPLANTED SI, GAAS, AND GAPMURAKAMI K; GAMO K; NAMBA S et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 8; PP. 628-630; BIBL. 12 REF.Article

LASER-INDUCED RECRYSTALLIZATION AND DAMAGE IN GAASTSU R; BAGLIN JE; LASHER GJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 2; PP. 153-155; BIBL. 14 REF.Article

PHOTOELECTRON SPECTROSCOPY OF SE2 AND TE2.STREETS DG; BERKOWITZ J.1976; J. ELECTRON. SPECTROSC. RELAT. PHENOMENA; NETHERL.; DA. 1976; VOL. 9; NO 4; PP. 269-287; BIBL. 32 REF.Article

ORIENTATIONAL DEPENDENCE OF DAMAGE IN TE+ IMPLANTED GERMANIUM SINGLE CYSTALSKALITZOVA M; FOTI G; BERTOLOTTI M et al.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 69; NO 3-4; PP. 191-198; BIBL. 19 REF.Article

PHOTODETACHMENT OF SOME ATOMIC NEGATIVE IONS: P-, AS-, SB-, BI-, TE-, CR-, NI-.FELDMANN D; RACKWITZ R; HEINICKE E et al.1977; Z. PHYS. A; DTSCH.; DA. 1977; VOL. 282; NO 2; PP. 143-148; BIBL. 17 REF.Article

ON THE SP2 CONFIGURATION IN THE GA I, IN I AND TL I ISOELECTRONIC SEQUENCESCONNERADE JP; BAIG MA.1981; J. PHYS. B; ISSN 0022-3700; GBR; DA. 1981; VOL. 14; NO 1; PP. 29-38; BIBL. 22 REF.Article

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