FONTE MALLEABLE A TENEURS ELEVEES EN SILICIUM ET EN SOUFRE = HIGH SILICON AND SULPHUR MALLEABLE CAST-IRONZHUKOV AA; DAVYDOV SV.1983; FONDERIE, FONDEUR D'AUJOURD'HUI; ISSN 0249-3136; FRA; DA. 1983; NO 22; PP. 29-32; ABS. ENG/GER; BIBL. 6 REF.Article

PROCEEDINGS/INTERNATIONAL SYMPOSIUM ON INDUSTRIAL USES OF SELENIUM AND TELLURIUM, TORONTO ON, OCTOBER 21-23, 1980 = ACTES DE CONGRES. SYMPOSIUM INTERNATIONAL SUR LES UTILISATIONS INDUSTRIELLES DU SELENIUM ET DU TELLURE, TORONTO, ONTARIO 21-23 OCT 19801980; INTERNATIONAL SYMPOSIUM ON INDUSTRIAL USES OF SELENIUM AND TELLURIUM/1980-10-21/TORONTO ON; USA; DARIEN: SELENIUM-TELLURIUM DEVELOPMENT ASSOCIATION; DA. 1980; 366 P.; 28 CMConference Proceedings

Tellurium embrittlement of type 316 steelHEMSWORTH, J. A; NICHOLAS, M. G; CRISPIN, R. M et al.Journal of materials science. 1990, Vol 25, Num 12, pp 5248-5256, issn 0022-2461Article

Alliage complexe d'un acier avec du sélénium et du tellurePAVLOV, V. G; GOLUBTSOV, V. A; GUSEVA, Z. F et al.Izvestija vysših učebnyh Zavedenij. Černaja Metallurgija. 1986, Num 2, pp 24-30, issn 0368-0797Article

Crystal growth of SrS from Te solution and its optical propertiesKANIE, H; KAGAWA, H; KATO, T et al.Journal of crystal growth. 1999, Vol 197, Num 3, pp 504-506, issn 0022-0248Conference Paper

Growth of GaAs from Ga solution under reduced gravity during the D2-missionDANILEWSKY, A. N; NAGEL, G; BENZ, K. W et al.Crystal research and technology (1979). 1994, Vol 29, Num 2, pp 171-178, issn 0232-1300Article

Pairing of Mn-acceptors and Te-donors in InP and related alloysADAMS, A. R; BENYON, R. P; GREENE, P. D et al.Solid state communications. 1994, Vol 89, Num 1, pp 69-72, issn 0038-1098Article

The properties of heavily compensated high resistivity GaSb crystalsMILVIDSKAYA, A. G; POLYAKOV, A. Y; KOLCHINA, G. P et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 279-282, issn 0921-5107Article

Photoionization of the DX centers in Te-doped Al_xGa_1-xAs : absence of two-step photoionisation of DX centersSU, Z; FARMER, J. W; MIZUTA, M et al.Physical review. B, Condensed matter. 1993, Vol 48, Num 7, pp 4412-4417, issn 0163-1829Article

Excitation photocapacitance study of ionized levels in n-type GaAs observed during photoquenchingNISHIZAWA, J.-I; OYAMA, Y.Journal of the Electrochemical Society. 1998, Vol 145, Num 8, pp 2892-2894, issn 0013-4651Article

Impurity hardening of InBi single crystalsJANI, T. M; PANDYA, G. R; DESAI, C. F et al.Crystal research and technology (1979). 1994, Vol 29, Num 1, pp K3-K6, issn 0232-1300Article

Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilationLI HUI; ZHOU KAI; PANG JINGBIAO et al.Semiconductor science and technology. 2011, Vol 26, Num 7, issn 0268-1242, 075016.1-075016.6Article

Optical characterization of Ar⁺ ion implanted and annealed GaAs doping superlatticesKUNERT, H. W; MALHERBE, J. B; BRINK, D. J et al.Applied surface science. 1998, Vol 135, Num 1-4, pp 29-36, issn 0169-4332Article

Photoluminescence characterization of Te-doped GaSb layers grown by liquid-phase epitaxy from Bi meltsGLADKOV, P; MONOVA, E; WEBER, J et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1409-1415, issn 0268-1242Article

Grain boundary diffusion and grain boundary segregation of tellurium in silverHERZIG, C; GEISE, J; MISHIN, Y et al.Acta metallurgica et materialia. 1993, Vol 41, Num 6, pp 1683-1691, issn 0956-7151Article

Einfluss von chemischer Zusammensetzung und Herstellungsbedingungen auf die Rissanfälligkeit Te-legierter AutomatenstähleSCHMIDTMANN, E; EBRECHT, M.Steel research. 1991, Vol 62, Num 11, pp 522-527, issn 0177-4832Article

High resolution electron microscopic investigations of dislocations in deformed GaAs single crystals doped with Te = Hochaufgeloeste elektronenmikroskopische Untersuchung der Versetzungen in verformten GaAs-Einkristallen mit Te-DotierungMAKSIMOV, S.K; ZIEGLER, M; KHODOS, I.I et al.Physica status solidi. A. Applied research. 1984, Vol 84, Num 1, pp 79-86, issn 0031-8965Article

Activities of oxygen in copper melts containing selenium or tellurium = Activité de l'oxygène dans des bains de cuivre contenant du sélénium et du tellureOTSUKA, S; HANAOKA, H; KOZUKA, Z et al.Transactions of the Japan institute of metals. 1983, Vol 24, Num 3, pp 132-138, issn 0021-4434Article

Properties of a low-alloy steel with tellurium additivePOPOVA, L.V; LEBEDEV, D.V; LITVINENKO, D.A et al.Izvestiâ Akademii nauk SSSR. Metally. 1983, Vol 1983, Num 2, pp 127-129, issn 0568-5303Article

Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescenceVLASOV, A. S; RAKOVA, E. P; KHVOSTIKOV, V. P et al.Solar energy materials and solar cells. 2010, Vol 94, Num 6, pp 1113-1117, issn 0927-0248, 5 p.Article

Sulphur containing cast iron with compact graphite inclusionsZHUKOV, A.A; DAVYDOV, S.V; FROLOV, V.V et al.Litejnoe proizvodstvo. 1983, Vol 3, pp 5-6, issn 0024-449XArticle

Formation of spiral pits on (111) surfaces of GaP crystalsSUGAWARA, S.Nippon Kinzoku Gakkaishi (1952). 1999, Vol 63, Num 4, pp 435-439, issn 0021-4876Article

Electrical properties of narrow gap semiconductor PtSb₂ = Elektrische Eigenschaften des Halbleiters PtSb₂ mit enger LueckeDARGYS, A; KUNDROTAS, J.The Journal of physics and chemistry of solids. 1983, Vol 44, Num 3, pp 261-267, issn 0022-3697Article

High-resolution X-ray diffraction study of CZ-grown GaAsP crystalsKOWALSKI, G; GRONKOWSKI, J; CZYZAK, A et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 8, pp 2578-2584, issn 1862-6300, 7 p.Conference Paper

The study of the interaction of indium with tellurium in siliconTESSEMA, G; VIANDEN, R.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 7, pp 1471-1476, issn 0947-8396, 6 p.Article