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ELECTRICAL PROPERTIES OF GLASSY AS2TE3BRASEN D.1972; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1972; VOL. 11; NO 2; PP. 131-136; BIBL. 8 REF.Serial Issue

COMPOSITION DEPENDENT FEATURES IN THE DENSITY OF VALENCE STATES OF SOLIDS: AMORPHOUS AND CRYSTALLINE AS2TE3.SHEVCHIK NJ; BISHOP SG.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 3; PP. 269-273; BIBL. 12 REF.Article

EN RUSSE. = CONDUCTIVITE THERMIQUE DE AS2SE3 ET AS2TE3 A L'ETAT SOLIDE ET LIQUIDEAMIRKHANOV KH I; MAGOMEDOV YA B; ISMAILOV SH M et al.1975; FIZ. TVERD. TELA; S.S.S.R.; DA. 1975; VOL. 17; NO 12; PP. 3628-3630; BIBL. 11 REF.Article

SUSCEPTIBILITE MAGNETIQUE DES SYSTEMES DE CHALCOGENURES DU TYPE AIV-BVIKUTVITSKIJ VA; KISELEV VB; SKORIKOV VM et al.1976; IZVEST. AKAD. NAUK S.S.S.R. NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 10; PP. 1737-1740; BIBL. 15 REF.Article

ON THE PHOTOCONDUCTIVITY OF AMORPHOUS CHALCOGENIDE SEMICONDUCTORSHALPERN V.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 37; NO 4; PP. 423-434; BIBL. 20 REF.Article

TRANSPORT AND RECOMBINATION PROPERTIES OF AMORPHOUS ARSENIC TELLURIDE.MOUSTAKAS TD; WEISER K.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 6; PP. 2448-2454; BIBL. 38 REF.Article

PHASE TRANSITIONS AND ELECTRICAL PROPERTIES OF AS2TE3.PLATAKIS NS.1977; J. NON-CRYST. SOLIDS; NETHERL.; DA. 1977; VOL. 24; NO 3; PP. 365-376; BIBL. 35 REF.Article

DENSITIES OF VALENCE STATES OF AMORPHOUS AND CRYSTALLINE AS2S3, AS2SE3, AND AS2TE3: X-RAY PHOTOEMISSION AND THEORY.BISHOP SG; SHEVCHIK NJ.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 4; PP. 1567-1578; BIBL. 45 REF.Article

DIRECT PROOF OF THE CONDUCTION TYPE IN SEMI-INSULATING THIN FILMS.MULLER P.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 33; NO 2; PP. 543-553; ABS. ALLEM.; BIBL. 34 REF.Article

ELECTRONIC STRUCTURE OF AS2S3, AS2SE3 AND AS2TE3 GLASSES BY THE EXTENDED HUECKEL THEORY.SHIMIZU T; ISHII N.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 74; NO 1; PP. K39-K42; BIBL. 15 REF.Article

ANOMALOUS THERMOELECTRIC POWER OF SOME LIQUID CHALCOGENIDE SYSTEMS.MOUSTAKAS TD; WEISER K; GRANT AJ et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 5; PP. 575-579; BIBL. 14 REF.Article

ELECTRONIC PROPERTIES OF GLASSY AS2TE3ABRAHAM A; HRUBY A; STOURAC L et al.1972; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1972; VOL. 22; NO 11; PP. 1168-1178; BIBL. 21 REF.Serial Issue

EVIDENCE D'UN DESORDRE A MOYENNE DISTANCE DANS LES SOLIDES. INTERPRETATION DES PROPRIETES ELECTRIQUES DES SEMICONDUCTEURS DESORDONNES.PISTOULET B; ROBERT JL; DUSSEAU JM et al.1977; J. PHYS., COLLOQ.; FR.; DA. 1977 PARU 1978; VOL. 38; NO 7; PP. 207-210; ABS. ANGL.; BIBL. 14 REF.; (ORDRE DESORDRE SOLIDES. COLLOQ. INT. CNRS; PARIS; 1977)Conference Paper

CONTRIBUTION A L'ETUDE DE L'IRRADIATION DE SEMICONDUCTEURS AMORPHES PAR DES IONS LOURDSBENMALEK MOHAMED.1978; ; FRA; DA. 1978; 7736; 163 P.; 29 CM; BIBL. 146 REF.; TH.: SCI./LYON 1/1977; LYCEN 7758Thesis

THE MOBILITY OF PHOTO-INDUCED CARRIERS IN DISORDERED AS2TE3 AND AS30TE48SI12GE10.MARSHALL JM; OWEN AE.1975; PHILOS. MAG.; G.B.; DA. 1975; VOL. 31; NO 6; PP. 1341-1356; BIBL. 17 REF.Article

ELECTRONS IN GLASS.MOTT NF.1977; CONTEMPOR. PHYS.; G.B.; DA. 1977; VOL. 18; NO 3; PP. 225-245; BIBL. 1 P. 1/2Article

PHASE DIAGRAM AND OUT-OF-EQUILIBRIUM PROPERTIES OF MELTS IN THE AS-TE SYSTEMCORNET J; ROSSIER D.1973; MATER. RES. BULL.; U.S.A.; DA. 1973; VOL. 8; NO 1; PP. 9-20; BIBL. 17 REF.Serial Issue

TEMPERATURE DEPENDENCE OF A.C. CONDUCTIVITY OF CHALCOGENIDE GLASSESELLIOTT SR.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 37; NO 5; PP. 553-560; BIBL. 19 REF.Article

PRESSURE DEPENDENCE OF THE RESISTIVITY IN THE AMORPHOUS AS40SEXTE60-X SYSTEMGEETHA RAMANI; GIRIDHAR A; SINGH AK et al.1979; PHILOS. MAG., B; GBR; DA. 1979; VOL. 39; NO 5; PP. 385-388; BIBL. 8 REF.Article

PARAMAGNETIC STATES AND HOPPING CONDUCTIVITY IN A CHALCOGENIDE GLASS: AS2TE3.HAUSER JJ; HUTTON RS.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 37; NO 13; PP. 868-871; BIBL. 21 REF.Article

THE DENSITY OF STATES AT THE FERMI LEVEL OF THE NON-CRYSTALLINE SEMICONDUCTORS.KOCKA J.1976; CZECHOSL. J. PHYS.; CZECHOSL.; DA. 1976; VOL. 26; NO 7; PP. 807-811; BIBL. 18 REF.Article

CHARGE SCREENING LENGTH IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORSMARSHALL JM.1978; PHILOS. MAG., B; GBR; DA. 1978; VOL. 38; NO 4; PP. 407-417; BIBL. 12 REF.Article

LOCALIZED GAP STATES IN AMORPHOUS SEMICONDUCTING COMPOUNDS.HAUSER JJ; DISALVO FJ JR; HUTTON RS et al.1977; PHILOS. MAG.; G.B.; DA. 1977; VOL. 35; NO 6; PP. 1557-1575; BIBL. 22 REF.Article

ELECTRONIC STRUCTURE OF ARSENIC CHALCOGENIDES.BULLETT DW.1976; PHYS. REV., B; U.S.A.; DA. 1976; VOL. 14; NO 4; PP. 1683-1692; BIBL. 38 REF.Article

CHARACTERIZATION OF LIGHT EMISSION FROM AMORPHOUS CHALCOGENIDE SWITCHESWALSH PJ; POOLADDEJ D; THOMPSON MJ et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 733-734; BIBL. 8 REF.Article

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