NUMERICAL EVALUATION OF LUMPED INDUCTANCE INFLUENCES OF SUPERCONDUCTING CIRCUIT INTERCONNECTIONS ON ULTRAFAST SWITCHING SIGNAL PROPAGATION CHARACTERISTICSTEMMYO J; YOSHIKIYO H.1982; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1982; VOL. 30; NO 1; PP. 27-34; BIBL. 8 REF.Article

SAW BANDPASS FILTER DESIGN FOR 1-6 GHZ PCM TIMING TANK APPLICATIONSTEMMYO J; YOSHIKAWA S.1980; IEEE TRANS. MICROWAVE THEORY TECH.; ISSN 0018-9480; USA; DA. 1980; VOL. 28; NO 8; PP. 846-851; BIBL. 15 REF.Article

ALUMINUM EVAPORATION CONDITIONS FOR SAW INTERDIGITAL TRANSDUCERSTEMMYO J; YOSHIKAWA S.1980; I.E.E.E. TRANS. SONICS ULTRASON.; USA; DA. 1980; VOL. 27; NO 4; PP. 219-221; BIBL. 8 REF.Article

ON THE FABRICATION AND PERFORMANCE OF SAW DELAY LINE FILTERS FOR GHZ SAW OSCILLATORSTEMMYO J; YOSHIKAWA S.1978; I.E.E.E. TRANS. SONICS ULTRASON.; USA; DA. 1978; VOL. 25; NO 6; PP. 367-371; BIBL. 21 REF.Article

FINE ADJUSTMENT OF WIDE-BANDWIDTH SAW FILTER RESPONSESKOTAKA I; TEMMYO J; INAMURA T et al.1980; TRANS. INST. ELECTRON. COMMUN. ENG. JPN. E; JPN; DA. 1980; VOL. 63; NO 2; PP. 112-113; BIBL. 6 REF.Article

Strained InGaAs quantum well lasers with small-divergence angles for high-power pump modulesTEMMYO, J; SHIMIZU, M.Electronics Letters. 1994, Vol 30, Num 24, pp 2046-2047, issn 0013-5194Article

PERFORMANCE OF 0.4-MU M LINEWIDTH SAW INTERDIGITAL TRANSDUCERS FABRICATED BY SCANNING-ELECTRON-BEAM LITHOGRAPHYTEMMYO J; SAKAKIBARA Y; KOMATSU K et al.1980; IEEE TRANS. SONICS ULTRASON.; ISSN 0018-9537; USA; DA. 1980; VOL. 27; NO 6; PP. 383-385; BIBL. 12 REF.Article

Design of high-power strained InGaAs/AlGaAs quantum-well lasers with a vertical divergence angle of 18°TEMMYO, J; SUGO, M.Electronics Letters. 1995, Vol 31, Num 8, pp 642-644, issn 0013-5194Article

Characteristic impedance design considerations for a high-speed superconducting packaging systemTEMMYO, J; YOSHIKIYO, H.IEEE transactions on microwave theory and techniques. 1985, Vol 33, Num 5, pp 414-417, issn 0018-9480Article

1.6 GBIT/S OPTICAL RECEIVER AT 1.3 MU M WITH SAW TIMING RETRIEVAL CIRCUITYAMADA JI; TEMMYO J; YOSHIKAWA S et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 2; PP. 57-58; BIBL. 10 REF.Article

A NEW TAPPING DESIGN FOR LOW-DISTORTION SAW TAPPED DELAY LINESTEMMYO J; INAMURA T; KOTAKA I et al.1979; TRANS. INST. ELECTRON. COMMUN. ENG. JPN., E; JPN; DA. 1979; VOL. 62; NO 11; PP. 775-778; BIBL. 9 REF.Article

FUNDAMENTAL PERFORMANCES OF A TWO-PHASE PSK MODULATOR EMPLOYING A SAW DELAY LINETEMMYO J; TAMAMURA Y; INAMURA T et al.1979; TRANS. INST. ELECTRON. COMMUN. ENG. JPN, E; JPN; DA. 1979; VOL. 62; NO 10; PP. 664-665; BIBL. 6 REF.Article

Self-organized growth of strained InGaAs quantum disksNÖTZEL, R; TEMMYO, J; TAMAMURA, T et al.Nature (London). 1994, Vol 369, Num 6476, pp 131-133, issn 0028-0836Article

Self-organization of boxlike microstructures on GaAs (311)B surfaces by metalorganic vapor-phase epitaxyNÖTZEL, R; TEMMYO, J; TAMAMURA, T et al.Japanese journal of applied physics. 1994, Vol 33, Num 3A, pp L275-L278, issn 0021-4922, 2Article

ICSFS-12: 12th International Conference on Solid Films and Surfaces, Hamamatsu, Japan, 21-25 June 2004TEMMYO, J; TABE, M; NAKANISHI, Y et al.Applied surface science. 2005, Vol 244, Num 1-4, issn 0169-4332, 658 p.Conference Proceedings

Distortion and noise properties of a praseodymium-doped fluoride fiber amplifier in 1.3 μm AM-SCM video transmission systemsKIKUSHIMA, K; YAMADA, M; SHIMIZU, M et al.IEEE photonics technology letters. 1994, Vol 6, Num 3, pp 440-442, issn 1041-1135Article

AlGaAs epitaxial growth on (111)B substrates by metalorganic vapor-phase epitaxyKATO, K; HASUMI, Y; KOZEN, A et al.Journal of applied physics. 1989, Vol 65, Num 5, pp 1947-1951, issn 0021-8979, 5 p.Article

Cathodoluminescence study of substrate offset effects on interface step structures of quantum wellsWADA, K; KOZEN, A; HASUMI, Y et al.Applied physics letters. 1989, Vol 54, Num 5, pp 436-438, issn 0003-6951, 3 p.Article

A GaAs/AlGaAs double-heterojunction device functioning as a bipolar transistor and injection laser for optoelectronic integrated circuitsHASUMI, Y; KOZEN, A; TEMMYO, J et al.IEEE electron device letters. 1987, Vol 8, Num 1, pp 10-12, issn 0741-3106Article

Degradation behavior of 0.98-μm strained quantum well InGaAs/AlGaAs lasers under high-power operation : Strained-layer optoelectronic materials and devicesFUKUDA, M; OKAYASU, M; TEMMYO, J et al.IEEE journal of quantum electronics. 1994, Vol 30, Num 2, pp 471-476, issn 0018-9197Article

Solder bump height dependence of Josephson chip-to-card interconnection inductance using flip-chip bonding techniqueTEMMYO, J; AOKI, K; YOSHIKIYO, H et al.Journal of applied physics. 1983, Vol 54, Num 9, pp 5282-5286, issn 0021-8979Article

Enhancement of donor ionization in phosphorus-doped n-diamondKOIDE, Yasuo.Applied surface science. 2005, Vol 244, Num 1-4, pp 26-29, issn 0169-4332, 4 p.Conference Paper

Ordered quantum dots : atomic force microscopy study of a new self-organizing growth mode on GaAs (311)B substratesNÖTZEL, R; TEMMYO, J; TAMAMURA, T et al.Japanese journal of applied physics. 1995, Vol 34, Num 7B, pp L872-L875, issn 0021-4922, 2Article

Metalorganic vapor phase epitaxial growth for buried heterostructure GaAlAs lasers with semi-insulating blocking layersOKAYASU, M; KOZEN, A; HASUMI, Y et al.Applied physics letters. 1987, Vol 51, Num 24, pp 1980-1982, issn 0003-6951Article

Hydrogen and helium interactions in Si : phenomena obscure and not-so-obscureASHOK, S.Applied surface science. 2005, Vol 244, Num 1-4, pp 2-7, issn 0169-4332, 6 p.Conference Paper