DEVELOPMENT OF A 26-KV LIGHT-TRIGGERED THYRISTOR FOR ELECTRIC POWER SYSTEMSTEMPLE VAK.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 3; PP. 583-591; BIBL. 6 REF.Article

IDEAL FET DOPING PROFILETEMPLE VAK.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 619-626; BIBL. 8 REF.Article

THYRISTOR DEVICES FOR ELECTRIC POWER SYSTEMSTEMPLE VAK.1982; IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS; ISSN 0018-9510; USA; DA. 1982; VOL. 101; NO 7; PP. 2286-2291; BIBL. 8 REF.Conference Paper

COMPARISON OF LIGHT TRIGGERED AND ELECTRICALLY TRIGGERED THYRISTOR TURN-ONTEMPLE VAK.1981; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 860-865; BIBL. 11 REF.Article

INVERTER LIGHT TRIGGERED THYRISTOR WITH UNIQUE ARM-STRUCTURE AMPLIFYING GATETEMPLE VAK.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 801-807; BIBL. 9 REF.Article

POWER SEMICONDUCTOR DEVICES FOR HYBRID BREAKERSHOLROYD FW; TEMPLE VAK.1982; IEEE TRANS. POWER APP. SYST.; ISSN 0018-9510; USA; DA. 1982; VOL. 101; NO 7; PP. 2103-2108; BIBL. 4 REF.Conference Paper

A SUBSTRATE ETCH GEOMETRY FOR NEAL IDEAL BREAKDOWN VOLTAGE IN P-N JUNCTION DEVICES.TEMPLE VAK; ADLER MS.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 1077-1081; BIBL. 5 REF.Article

HIGH-POWER DUAL AMPLIFYING GATE LIGHT TRIGGERED THYRISTORS.TEMPLE VAK; FERRO AP.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 893-898; BIBL. 4 REF.Article

THE THEORY AND APPLICATION OF A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR P-N JUNCTIONS.TEMPLE VAK; ADLER MS.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 950-955; BIBL. 7 REF.Article

MAXIMUM SURFACE AND BULK ELECTRIC FIELDS AT BREAKDOWN FOR PLANAR AND BEVELED DEVICESADLER MS; TEMPLE VAK.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1266-1270; BIBL. 4 REF.Article

ENHANCEMENT OF BREAKDOWN VOLTAGE USING FLOATING METAL FIELD PLATES.TEMPLE VAK; ADLER MS.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 3; PP. 293-303; BIBL. 8 REF.Article

A GENERAL METHOD FOR PREDICTING THE AVALANCHE BREAKDOWN VOLTAGE OF NEGATIVE BEVELLED DEVICES.ADLER MS; TEMPLE VAK.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 956-960; BIBL. 9 REF.Article

THEORETICAL BASIS FOR FIELD CALCULATIONS ON MULTIDIMENSIONAL REVERSE BIASED SEMICONDUCTOR DEVICESADLER MS; TEMPLE VAK; RUSTAY RC et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 12; PP. 1179-1186; BIBL. 18 REF.Article

FREQUENCY RESPONSE OF THE CURRENT MULTIPLICATION PROCESS IN MIS TUNNEL DIODES.GREEN MA; TEMPLE VAK; SHEWCHUN J et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 9; PP. 745-752; BIBL. 10 REF.Article

EXPERIMENTALLY OBSERVED ADMITTANCE PROPERTIES OF THE SEMICONDUCTOR-INSULATOR-SEMICONDUCTOR (SIS) DIODESHEWCHUN J; CLARKE RA; TEMPLE VAK et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 9; PP. 1044-1050; BIBL. 10 REF.Serial Issue

A 600-VOLT MOSFET DESIGNED FOR LOW ON-RESISTANCETEMPLE VAK; LOVE RP; GRAY PV et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 343-349; BIBL. 7 REF.Article

EXTENSION OF GUMMEL'S CHARGE CONTROL RELATION.BORREGO JM; TEMPLE VAK; ADLER MS et al.1977; SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 5; PP. 441-442; BIBL. 1 REF.Article

EQUILIBRIUM-TO-NONEQUILIBRIUM TRANSITION IN MOS (SURFACE OXIDE) TUNNEL DIODE.TEMPLE VAK; GREEN MA; SHEWCHUN J et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 11; PP. 4934-4943; BIBL. 20 REF.Article

LIMITATIONS ON INJECTION EFFICIENCY IN POWER DEVICES.ADLER MS; BEATTY BA; KRISHNA S et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON ENG.; DA. 1975; PP. 175-179; BIBL. 19 REF.Conference Paper

THEORY AND BREAKDOWN VOLTAGE FOR PLANAR DEVICES WITH A SINGLE FIELD LIMITING RING.ADLER MS; TEMPLE VAK; FERRO AP et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 2; PP. 107-113; BIBL. 12 REF.Article

LIMITATIONS OF INJECTION EFFICIENCY IN POWER DEVICES.ADLER MS; BEATTY BA; KRISHNA S et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 858-863; BIBL. 20 REF.Article