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HYDROGEN SENSITIVE MOS STRUCTURES.LUNDSTROEM I; SHIVARAMAN MS; SVENSSON C et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 631-634; BIBL. 9 REF.Conference Paper

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INTERPRETATION OF FLATBAND VOLTAGE SHIFTS IN TERMS OF CHARGE DISTRIBUTIONS IN MNOS STRUCTURESBERNT H; SCHOLTENS JW.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 9; PP. 843-850; BIBL. 12 REF.Article

THRESHOLD-VOLTAGE INSTABILITY OF N-CHANNEL MOSFET'S UNDER BIAS-TEMPERATURE AGINGSHIONO N; HASHIMOTO C.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 361-368; BIBL. 13 REF.Article

ALUMINUM OXIDE/SILICON DIOXIDE, DOUBLE-INSULATOR, MOS STRUCTURE.CLEMENS JT; LABUDA EF; BERGLUND CN et al.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 54; NO 4; PP. 687-719; BIBL. 18 REF.Article

POSITIVE FLAT BAND VOLTAGES MEASURED ON MIS DIODES CONSISTING OF EVAPORATED CDS FILMSKASSING R; DEPPE HR.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 27-31; BIBL. 3 REF.Serial Issue

EFFECT OF IONISING RADIATION ON MOBILE-ION DENSITY IN M.O.S. OXIDESBHAR TN; DAT R; KOYAMA RU et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 16-17; BIBL. 8 REF.Article

RAPID DETERMINATION OF SEMICONDUCTOR DOPING AND FLATBAND VOLTAGE IN LARGE MOSFET'S.LUBBERTS G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5355-5356; BIBL. 6 REF.Article

DISCHARGE OF M.N.O.S. STRUCTURESPOPOVA LI; VITANOV PK; ANTOV BZ et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 17-20; BIBL. 19 REF.Article

THE TIME DEPENDENCE OF THE FLATBAND VOLTAGE SHIFT OF MOS CAPACITORS CAUSED BY THE INJECTION OF MINORITY CARRIERS FROM SI INTO SIO₂JOSEPH B.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K9-K11; BIBL. 10 REF.Article

PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN INP AND GAAS FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACESZURAWSKY WP; LITTMAN JE; DRICKAMER HG et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3216-3219; BIBL. 15 REF.Article

METHOD FOR DETERMINATION OF CHARGE DENSITY DISTRIBUTION IN SILICON NITRIDE OF MNOS STRUCTURESKORDALSKI WJ; WILAMOWSKI BM.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. 387-398; ABS. GER; BIBL. 8 REF.Article

A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS-CAPACITORSHEASELL EL.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 199-209; BIBL. 26 REF.Article

DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIESCHANG CC; JOHNSON WC.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1368-1373; BIBL. 13 REF.Article

THIN FILMS OF METAL OXIDES ON SILICON BY CHEMICAL VAPOR DEPOSITION WITH ORGANOMETALLIC COMPOUNDS. IBALOG M; SCHIEBER M; PATAI S et al.1972; J. CRYST. GROWTH; NETHERL.; DA. 1972; VOL. 17; PP. 298-301; BIBL. 23 REF.Serial Issue

Pulse technique for flat-band voltage measurements in MIS structuresBAGINSKI, I. L; KOSTSOV, E. G; MEERSON, E. E et al.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K99-K102, issn 0031-8965Article

MOTT-SCHOTTKY PLOTS AND FLATBAND POTENTIALS FOR SINGLE CRYSTAL RUTILE ELECTRODESCOOPER G; TURNER JA; NOZIK AJ et al.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 1973-1977; BIBL. 13 REF.Article

DEPENDENCE OF FLATBAND POTENTIALS OF N-TIO₂ ON ELECTROLYTES AND ELECTROLYTE CONCENTRATIONSWILSON JR; PARK SM.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 11; PP. 2369-2370; BIBL. 11 REF.Article

ETUDE DES FILMS HYDROLYTIQUES DE DIOXYDE DE TITANE PAR ELECTROREFLEXIONSTREL'TSOV EA; PAKHIMOV VP; LAZORENKO MANEVICH RM et al.1983; ELEKTROHIMIJA; ISSN 0424-8570; SUN; DA. 1983; VOL. 19; NO 2; PP. 232-235; BIBL. 9 REF.Article

AMORPHOUS SILICON HYDRIDE: PREPARATION, CHARACTERIZATION, AND PHOTOELECTROCHEMISTRYBECKER RS; SUBRAHMANYAM M; EPPS GF et al.1983; JOURNAL OF PHYSICAL CHEMISTRY; ISSN 0022-3654; USA; DA. 1983; VOL. 87; NO 17; PP. 3219-3226; BIBL. DISSEM.Article

ELECTRON TRAPPING IN THE OXIDE LAYER OF MIS-TYPE AL-, AU-, AG- AND SN-N-TYPE GAAS SCHOTTKY BARRIERSLAFLERE WH; VAN MEIRHAEGHE RL; CARDON F et al.1982; SOLID-STATE ELECTRON; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 389-393; BIBL. 9 REF.Article

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