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INFLUENCE OF A FLATBAND-VOLTAGE VARIATION ALONG THE CHANNEL ON THE DRAIN CHARACTERISTICS OF A TFT.BURGELMAN M; PAUWELS HJ.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 459-461; BIBL. 12 REF.Article

HYDROGEN SENSITIVE MOS STRUCTURES.LUNDSTROEM I; SHIVARAMAN MS; SVENSSON C et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 631-634; BIBL. 9 REF.Conference Paper

RAPID AND PRECISE MEASUREMENT OF FLATBAND VOLTAGE.LI SP; RYAN M; BATES ET et al.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 5; PP. 632-634; BIBL. 1 REF.Article

DIRECT MEASUREMENT OF FLAT-BAND VOLTAGE IN MOS BY INFRARED EXCITATIONYUN BH.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 5; PP. 194-195; BIBL. 3 REF.Serial Issue

INTERPRETATION OF FLATBAND VOLTAGE SHIFTS IN TERMS OF CHARGE DISTRIBUTIONS IN MNOS STRUCTURESBERNT H; SCHOLTENS JW.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 9; PP. 843-850; BIBL. 12 REF.Article

THRESHOLD-VOLTAGE INSTABILITY OF N-CHANNEL MOSFET'S UNDER BIAS-TEMPERATURE AGINGSHIONO N; HASHIMOTO C.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 361-368; BIBL. 13 REF.Article

ALUMINUM OXIDE/SILICON DIOXIDE, DOUBLE-INSULATOR, MOS STRUCTURE.CLEMENS JT; LABUDA EF; BERGLUND CN et al.1975; BELL SYST. TECH. J.; U.S.A.; DA. 1975; VOL. 54; NO 4; PP. 687-719; BIBL. 18 REF.Article

POSITIVE FLAT BAND VOLTAGES MEASURED ON MIS DIODES CONSISTING OF EVAPORATED CDS FILMSKASSING R; DEPPE HR.1972; THIN SOLID FILMS; NETHERL.; DA. 1972; VOL. 13; NO 1; PP. 27-31; BIBL. 3 REF.Serial Issue

BLISTER FORMATION IN PD GATE MIS HYDROGEN SENSORSARMGARTH M; NYLANDER C.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 12; PP. 384-386; BIBL. 15 REF.Article

EFFECT OF IONISING RADIATION ON MOBILE-ION DENSITY IN M.O.S. OXIDESBHAR TN; DAT R; KOYAMA RU et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 1; PP. 16-17; BIBL. 8 REF.Article

RAPID DETERMINATION OF SEMICONDUCTOR DOPING AND FLATBAND VOLTAGE IN LARGE MOSFET'S.LUBBERTS G.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5355-5356; BIBL. 6 REF.Article

DISCHARGE OF M.N.O.S. STRUCTURESPOPOVA LI; VITANOV PK; ANTOV BZ et al.1979; I.E.E.J. SOLID STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 1; PP. 17-20; BIBL. 19 REF.Article

THE TIME DEPENDENCE OF THE FLATBAND VOLTAGE SHIFT OF MOS CAPACITORS CAUSED BY THE INJECTION OF MINORITY CARRIERS FROM SI INTO SIO2JOSEPH B.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 51; NO 1; PP. K9-K11; BIBL. 10 REF.Article

PRESSURE INDUCED CONDUCTION AND VALENCE BAND SHIFTS IN INP AND GAAS FROM MEASUREMENTS AT SEMICONDUCTOR-ELECTROLYTE INTERFACESZURAWSKY WP; LITTMAN JE; DRICKAMER HG et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 6; PP. 3216-3219; BIBL. 15 REF.Article

METHOD FOR DETERMINATION OF CHARGE DENSITY DISTRIBUTION IN SILICON NITRIDE OF MNOS STRUCTURESKORDALSKI WJ; WILAMOWSKI BM.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. 387-398; ABS. GER; BIBL. 8 REF.Article

SURFACE POTENTIAL RELAXATION IN A BIASED HG1-XCDXTE METAL-INSULATOR-SEMICONDUCTOR CAPACITORDAUGHERTY M; JANOUSEK BK.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 290-292; BIBL. 12 REF.Article

DOPANT DENSITY FROM MAXIMUM-MINIMUM CAPACITANCE RATIO OF IMPLANTED MOS STRUCTURESBREWS JR.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 375-379; BIBL. 6 REF.Article

COMPUTER ANALYSIS OF A SHORT-CHANNEL BC MOSFETOKA H; NISHIUCHI K; NAKAMURA T et al.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 579-585; BIBL. 18 REF.Article

MEMORY HYSTERESIS MEASUREMENTS ON SILICON OXYNITRIDE FILMSHORVATH ZJ.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 10; PP. 1053-1054; BIBL. 2 REF.Article

A MODIFIED EXPRESSION OF THE FLAT-BAND VOLTAGE DUE TO THE FIXED SURFACE CHARGE DENSITY OF A MOS CONFIGURATION1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1163-1164Article

TEMPERATURE BEHAVIOUR OF MNOS STRUCTURES.POPOVA LI; VITANOV PK; ANTOV BZ et al.1977; PHYS. LETTERS, A; NETHERL.; DA. 1977; VOL. 59; NO 6; PP. 481-482; BIBL. 12 REF.Article

EFFECT OF DISTRIBUTED CHARGE IN THE NITRIDE OF AN MNOS STRUCTURE ON THE FLAT-BAND VOLTAGE.CHANG JJ.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 742-743; BIBL. 12 REF.Article

A CONSTANT-CURRENT CHARGING TECHNIQUE FOR THE MEASUREMENT OF GENERATION RATES IN MOS-CAPACITORSHEASELL EL.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 199-209; BIBL. 26 REF.Article

DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIESCHANG CC; JOHNSON WC.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 12; PP. 1368-1373; BIBL. 13 REF.Article

THIN FILMS OF METAL OXIDES ON SILICON BY CHEMICAL VAPOR DEPOSITION WITH ORGANOMETALLIC COMPOUNDS. IBALOG M; SCHIEBER M; PATAI S et al.1972; J. CRYST. GROWTH; NETHERL.; DA. 1972; VOL. 17; PP. 298-301; BIBL. 23 REF.Serial Issue

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