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ANALYSE DER STROM-SPANNUNGS-KENNLINIEN SPEZIELLER SILIZIUM-FOTODIODEN IM BEREICH KLEINER FLUSSPANNUNGEN = ANALYSE DES CARACTERISTIQUES COURANT TENSION DE PHOTODIODES AU SILICIUM SPECIALES DANS LE DOMAINE DES FAIBLES TENSIONS DIRECTESHARTMANN JD.1980; EXP. TECH. PHYS.; ISSN 0014-4924; DDR; DA. 1980; VOL. 28; NO 4; PP. 347-356; ABS. ENG; BIBL. 11 REF.Article

MONTE CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES. = SIMULATION DE MONTE-CARLO DU TRANSPORT DE COURANT DANS LES DIODES A BARRIERE DE SCHOTTKY EN POLARISATION DIRECTEBACCARANI G; MAZZONE AM.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 59-60; BIBL. 4 REF.Article

ETUDE DES PROCESSUS DE RELAXATION DES PHOTODIODES AUX POLARISATIONS DIRECTES ELEVEESVOROB'EV YU V; KARKHANIN YU I; TSYUPA AM et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 11; PP. 2089-2093; BIBL. 8 REF.Article

ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODESLIVINGSTONE AW; TURVEY K; ALLEN JW et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 351-356; ABS. FR.; BIBL. 10 REF.Serial Issue

FLUCTUATIONS ELECTRIQUES DANS DES DIODES IDEALISEES, NON DEGENEREES, A POLARISATION DIRECTEKARBA LP; KARPOV YU S; POROVSKIJ GS et al.1972; RADIOTEKHNIKA; S.S.S.R.; DA. 1972; VOL. 27; NO 5; PP. 62-66; BIBL. 5 REF.Serial Issue

SUR L'ANALYSE DU COURANT PHOTOELECTRIQUE D'UNE JONCTION P-N POLARISEE EN DIRECTMORELIERE R; VIGNES P.1972; C.R. ACAD. SCI., B; FR.; DA. 1972; VOL. 275; NO 25; PP. 951-954; BIBL. 1 REF.Serial Issue

THEORY OF A FORWAD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER. II. ANALYTICAL APPROXIMATIONSCHOO SC.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 2; PP. 197-211; BIBL. 8 REF.Serial Issue

ALTERNATIVE WAY FOR NUMERICAL STEADY-STATE ANALYSIS OF FORWARD-BIASED P-N JUNCTION DEVICES.LETURCQ P; MUNOZ YAGUE A.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 19; PP. 465-466; BIBL. 7 REF.Article

THEORIE DU TRANSISTOR A EFFET DE CHAMP, A GACHETTE P-N POLARISEE EN SENS DIRECTBARANOV LI; YUDOVICH MB.1973; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1973; VOL. 18; NO 4; PP. 823-828; BIBL. 6 REF.Serial Issue

ZUM TEMPERATURKOEFFIZIENTEN DER FLUSSPANNUNG VON PN- UND SCHOTTKY-UBERGAENGEN = SUR LE COEFFICIENT DE TEMPERATURE DE LA TENSION DIRECTE DE JONCTIONS P-N ET DE BARRIERES SCHOTTKYKLOSE H.1973; NACH.-TECH., ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 5; PP. 192-194; BIBL. 3 REF.; (2. WISS. KONF. INGENIEURHOCHSCH. MITTWEIDA. EINSATZ PROZESSMESSTECH. QUALITAETSSICHERUNG ERHOHUNG ZUVERLAESSIGKEIT TECHNOL. PROZESSES; MITTWEIDA; 1973)Conference Paper

MODULATION OF INFRARED AND SUB-MM WAVES WITH CROSSED FORWARD-BIASED JUNCTION DIODESCHAUDHURI PK.1972; J. INSTIT. TELECOMMUNIC. ENGRS; INDIA; DA. 1972; VOL. 18; NO 11; PP. 541-543; BIBL. 10 REF.Serial Issue

TUNNELING IN FORWARD BIASED MOS TUNNEL STRUCTURESTOROK MI.1972; ACTA PHYS. CHEM.; HONGR.; DA. 1972; VOL. 18; NO 3-4; PP. 139-146; ABS. RUSSE; BIBL. 17 REF.Serial Issue

A THEORETICAL INVESTIGATION ON THE GENERATION CURRENT IN SILICON P-N JUNCTIONS UNDER REVERSE BIASCALZOLARI PU; GRAFFI S.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 1003-1011; BIBL. 8 REF.Serial Issue

A COMPARISON OF GAMMA-INDUCED DEGRADATION AND FORWARD BIAS-INDUCED DEGRADATION IN GAP: ZN, O. LEDS.BARNES CE.1978; J. ELECTRON. MATER.; USA; DA. 1978; VOL. 7; NO 4; PP. 589-617; BIBL. 37 REF.Article

JFETT OPERATION WITH FORWARD-BIASED GATE.BOZIC SM; MAMCZAK JN.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 2; PP. 219-223; BIBL. 2 REF.Article

INFLUENCE OF PREPARATION CONDITIONS ON FORWARD-BIAS CURRENTS OF AMORPHOUS SILICON SCHOTTKY DIODESDENEUVILLE A; BRODSKY MH.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 3 PART. 1; PP. 1414-1421; BIBL. 16 REF.Article

INTERACTION OF HIGH POWER P-I-N DIODES AND DRIVING CIRCUIT DURING FORWARD-BIAS SWITCHING.GEORGOPOULOS CJ.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 295-302; BIBL. 11 REF.Article

ELECTROLUMINESCENCE INF FORWARD BIASED GASE-SNO2 HETEROJUNCTION.TATSUYAMA C; MIZUKAMI H; ICHIMURA S et al.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 11; PP. 1925-1926; BIBL. 5 REF.Article

NATURE OF CURRENT AND OF FORWARD-BIAS ELECTROLUMINESCENCE EXCESS NOISE IN GAAS DIODESLUKYANCHIKOVA NB; GARBAR NP; SHEINKMAN MK et al.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 7; PP. 801-807; BIBL. 18 REF.Serial Issue

ADMITTANCE OF A FORWARD-BIASED P-N+ JUNCTION DIODEGOKHALE BV.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1215-1219; BIBL. 5 REF.Serial Issue

NUMERICAL SIMULATION OF A FORWARD-BIASED P-I-N STRUCTURE WITH BAND-TO-BAND AUGER RECOMBINATIONFREIDIN B; VELMRE E.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 22; PP. 701-703; BIBL. 16 REF.Article

DIE RAEUMLICHE VERTEILUNG DER REKOMBINATION IN LEGIERTEN SILIZIUM-PSN-GLEICHRICHTERN BEI BELASTUNG IN DURCHLASSRICHTUNG = LA DISTRIBUTION SPATIALE DE LA RECOMBINAISON DES PORTEURS DE CHARGE DANS DES REDRESSEURS PSN AU SI ALLIES ET POLARISES EN DIRECTDANNHAUSER F; KRAUSSE J.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 861-873; ABS. ANGL.; BIBL. 19 REF.Serial Issue

DEFECT STRUCTURE INDUCED DURING FORWARD-BIAS DEGRADATION OF GAP GREEN-LIGHT-EMITTING DIODES.PETROFF PM; LORIMOR OG; RALSTON JM et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 4; PP. 1583-1588; BIBL. 21 REF.Article

THEORY OF A FORWARD-BIASED DIFFUSED-JUNCTION P-L-N RECTIFIER. III. FURTHER ANALYTICAL APPROXIMATIONSSEOK CHEOW CHOO.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 418-426; BIBL. 12 REF.Serial Issue

MESSUNG DER LADUENGSTRAEGER-KONZENTRATIONSVERTEILUNG IM MITTELGEBIET EINES LEGIERTEN SILIZIUM-PSN-GLEICHRICHTERS BEI BELASTUNG IN DURCHLASSRICHTUNG = MESURE DE LA DISTRIBUTION DE LA C DES PORTEURS DE CHARGE DANS LA REGION CENTRALE DE REDRESSEURS PSN AU SI ALLIES SOLLICITES DANS LE SENS DIRECTKRAUSSE J.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 8; PP. 841-848; ABS. ANGL.; BIBL. 6 REF.Serial Issue

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