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FABRICATION AND THE EFFECT OF DOPING CONCENTRATION ON BREAKDOWN VOLTAGE OF THE LARGE AREA PHOSPHOROUS DIFFUSED SILICONS DIODES.SANTOSH KUMAR.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 1-2; PP. 29-30; BIBL. 4 REF.Article

RESISTORS AND DIODES PRODUCED BY AL-IMPLANTATION IN SILICON.RUNGE H; KRIMMEL EF.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 149-150; BIBL. 4 REF.Article

QUASI-IDEAL TRANSISTOR MULTIVIBRATOR. = MULTIVIBRATEUR A TRANSISTOR QUASI IDEALDAMLJANOVIC DD.1974; PROC. J.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1291-1292; BIBL. 4 REF.Article

ZUR SPANNUNGSSTABILISIERUNG VON VERNETZTEM POLYAETHYLEN (VPE). = STABILISATION SOUS TENSION ELECTRIQUE DU POLYETHYLENE RETICULESAURE M.1976; ELEKTROTECH. Z., A; DTSCH.; DA. 1976; VOL. 97; NO 1; PP. 52-54Article

MODIFIED PNP TRANSISTORS FOR HIGH VOLTAGE INTEGRATED CIRCUITSVILLA FF.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 5; PP. 35-42; BIBL. 6 REF.Article

REVERSIBLE BREAKDOWN VOLTAGE COLLAPSE IN SILICON GATE-CONTROLLED DIODESRUSU A; PIETRAREANU O; BULUCEA C et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 5; PP. 473-480; BIBL. 10 REF.Article

ANALYSIS OF RELATIONS BETWEEN DIFFERENT DISTRIBUTIONS FUNCTIONS OF BREAK DOWN VOLTAGE.HELLER B; VEVERKA A.1975; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1975; VOL. 20; NO 4; PP. 375-381; BIBL. 4 REF.Article

A NEW BIPOLAR TRANSISTOR-GATKONDO H; YUKIMOTO Y.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 2; PP. 373-379; BIBL. 13 REF.Article

ANALYTICAL SOLUTIONS FOR THE BREAKDOWN VOLTAGES OF PUNCHED THROUGH DIODES HAVING CURVED JUNCTION BOUNDARIES AT THE EDGESANANTHARAM V; BHAT KN.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 939-945; BIBL. 14 REF.Article

ENHANCED BREAKDOWN VOLTAGE IN PLANAR METAL-OVERLAP LATERALLY DIFFUSED (MOLD) SCHOTTKY DIODES.RUSU A; BULUCEA C.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 11; PP. 620-622; BIBL. 5 REF.Article

INFLUENCE OF BEVEL ANGLE AND SURFACE CHARGE ON THE BREAKDOWEN VOLTAGE OF NEGATIVELY BEVELED DIFFUSED P-N JUNCTIONS.BAKOWSKI M; HANSSON B.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 651-657; BIBL. 4 REF.Article

ETUDES EFFECTUEES EN 1974 PAR LE L.C.I.E. VI. ETUDE DU COMPORTEMENT DIELECTRIQUE DES LIQUIDES ISOLANTS.BERTEIN H; FALLOU B.1975; REV. GEN. ELECTR.; FR.; DA. 1975; VOL. 84; NO 3; PP. 196-197; ABS. ANGLArticle

A SIMPLE ETCH CONTOUR FOR NEAR IDEAL BREAKDOWN VOLTAGE IN PLANE AND PLANAR P-N JUNCTIONS.TEMPLE VAK; ADLER MS.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 171-174; BIBL. 6 REF.Conference Paper

ENHANCEMENT OF BREAKDOWN VOLTAGE USING FLOATING METAL FIELD PLATES.TEMPLE VAK; ADLER MS.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 40; NO 3; PP. 293-303; BIBL. 8 REF.Article

POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 312-317; BIBL. 14 REF.Article

DESTRUCTIVE D.C. BREAKDOWN IN "BUILT-UP" BARIUM STEARATE FILMS.AGARWAL VK; SRIVASTAVA VK.1974; ELECTROCOMPAN. SCI. TECHNOL.; G.B.; DA. 1974; VOL. 1; NO 2; PP. 87-90; BIBL. 24 REF.Article

NEGATIVE RESISTANCE IN ZENER DIODESBISWAS JC; MITRA V.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1053-1055; BIBL. 8 REF.Article

NEW PHENOMENA ON DRAIN-TO-SOURCE BREAKDOWN VOLTAGE OF N-CHANNEL FET.TSUJIDE T.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 4; PP. 230-233; BIBL. 5 REF.Article

THE BREAKDOWN VOLTAGE OF SILICON DIOXIDE BREAKDOWN DETECTORS FOR FISSION FRAGMENTSKLEIN N.1981; NUCL. INSTRUM. METHODS PHYS. RES.; ISSN 502936; NLD; DA. 1981; VOL. 189; NO 2-3; PP. 569-576; BIBL. 11 REF.Article

INFLUENCE D'UN ETIRAGE ORIENTATIONNEL SUR LE PROCESSUS DE CLAQUAGE DU CHLORURE DE POLYVINYLEBAGIROV MA; DZHALILOV A YA; MALIN VP et al.1976; VYSOKOMOLEK. SOEDIN., A; S.S.S.R.; DA. 1976; VOL. 18; NO 5; PP. 1113-1116; BIBL. 3 REF.Article

DIFFERENTIATION IN CAUSES OF VARIANCE OF BREAKDOWN VOLTAGES MEASURED ON SAMPLES OF INSULATION.KUCERA J; VALENTA L.1975; ACTA TECH. C.S.A.V.; CESKOSL.; DA. 1975; VOL. 20; NO 4; PP. 469-478; BIBL. 5 REF.Article

INDEPENDENT CONTROL OF TEMPERATURE COEFFICIENT AND BREAKDOWN VOLTAGE IN ZENER DIODES.CULSHAW B.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 20; PP. 499-500; BIBL. 6 REF.Article

TEMPERATURE DEPENDENCE OF SURFACE FLASHOVER VOLTAGE OF POLYETHYLENE IN VACUUM. = VARIATION THERMIQUE DE LA TENSION DISRUPTIVE DE SURFACE DU POLYETHYLENE DANS LE VIDEOHKI Y; YAHAGI K.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 8; PP. 3695-3696; BIBL. 5 REF.Article

LOW BREAKDOWN VOLTAGE SCHOTTKY DIODE AS VOLTAGE REGULATORPOPOVIC RS; MLADENOVIC DA.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 6; PP. 214-215; BIBL. 5 REF.Article

SEMIAUTOMATIC MEASUREMENTS OF THIN-FILM BREAKDOWN VOLTAGESGAEBLER W; CONRAD R; BRAEUNIG D et al.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 10; PP. 1218-1222; BIBL. 5 REF.Article

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