EFFICACITE DE LA COMMANDE DU REGIME D'UN TRANSISTOR UHF A L'AIDE DE LA TENSION DE POLARISATIONKOMAROV VS; KOPTEV GI.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 127-129; BIBL. 1 REF.Article

PROBLEMES DE POLARISATION ET DE STABILISATION DU POINT DE FONCTIONNEMENT D'UN TRANSISTOR A EFFET DE CHAMPLESZCZYNSKI Z.1973; ARCH. ELEKTROTECH.; POLSKA; DA. 1973; VOL. 22; NO 84; PP. 507-515; ABS. RUSSE, ANGL.; BIBL. 6 REF.Serial Issue

COMPARATEUR AVEC CORRECTIONZHUKOV AV; MAKHOV VN.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 116-118; BIBL. 3 REF.Article

NEW QUARTZ MULTIVIBRATOR.DAMLJANOVIC DD.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 5; PP. 640-641; BIBL. 6 REF.Article

STABILITY OF HIGHLY DOPED NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DIODES.TORRENS AB.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 9; PP. 432-435; BIBL. 16 REF.Article

POLARIZED (LETTER *8*) MEMORY EFFECT IN SI SINGLE CRYSTAL POINT CONTACT DIODESMATSUDA A; OKUSHI H; SAITO M et al.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 1; PP. 227-231; ABS. RUSSE; BIBL. 5 REF.Serial Issue

MONTE CARLO SIMULATION OF CURRENT TRANSPORT IN FORWARD-BIASED SCHOTTKY-BARRIER DIODES. = SIMULATION DE MONTE-CARLO DU TRANSPORT DE COURANT DANS LES DIODES A BARRIERE DE SCHOTTKY EN POLARISATION DIRECTEBACCARANI G; MAZZONE AM.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 59-60; BIBL. 4 REF.Article

EFFECT OF BIAS FIELD IN A ZINC-OXIDE-ON-SILICON ACOUSTIC CONVOLVER.COLDREN LA.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 9; PP. 473-475; BIBL. 14 REF.Article

MOSFET THRESHOLDS AT 4.2 K INDUCED BY COOLING BIAS. = TENSION DE SEUIL D'UN TRANSISTOR A EFFET DE CHAMP DU TYPE MOS A 4,2 K INDUITE PAR UNE TENSION DE POLARISATION ASSOCIEE AU REFROIDISSEMENTTOKUDA AR; LAURITZEN PO.1974; J.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 9; PP. 606-607; BIBL. 5 REF.Article

SUBSTRATE BIAS CHARACTERISTICS OF ³¹P⁺ IMPLANTED N-CHANNEL MOS FET.WADA K; NAKANO M.1974; JAP. J. APPL. PHYS.; JAP.; DA. 1974; VOL. 13; NO 10; PP. 1673-1674; BIBL. 3 REF.Article

ETUDE DES PROCESSUS DE RELAXATION DES PHOTODIODES AUX POLARISATIONS DIRECTES ELEVEESVOROB'EV YU V; KARKHANIN YU I; TSYUPA AM et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 11; PP. 2089-2093; BIBL. 8 REF.Article

ELECTROLUMINESCENCE IN FORWARD-BIASED ZINC SELENIDE SCHOTTKY DIODESLIVINGSTONE AW; TURVEY K; ALLEN JW et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 3; PP. 351-356; ABS. FR.; BIBL. 10 REF.Serial Issue

ELECTROLUMINESCENCE IN REVERSE-BIASED SCHOTTKY DIODESALLEN JW.1973; J. LUMINESC.; NETHERL.; DA. 1973; VOL. 7; PP. 228-240; BIBL. 12 REF.; (PHYS. TECHNOL. SEMICOND. LIGHT EMMITTERS DETECTORS. PROC. INT. SYMP.; PUGNACHIUSO, ITALY; 1972)Conference Paper

STUDY OF THE SI-SIO₂ INTERFACE STATE WITH THE NEGATIVE BIAS-HEAT TREATMENT APPROACHKOBAYASHI I; NAKAHARA M; ATSUMI M et al.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 2; PP. 249-250; BIBL. 4 REF.Serial Issue

VARIATION DE LA REPONSE D'UN PHOTOMULTIPLICATEUR EN FONCTION DE LA TENSIONSODOMKA L; KLEPRLIK A.1973; JEMNA MECH. OPT.; CESKOSL.; DA. 1973; VOL. 18; NO 3; PP. 71-72; ABS. RUSSE ALLEM.; BIBL. 1 REF.Serial Issue

POLARIZED (LETTER *8*) MEMORY EFFECTS IN HETERO-SYSTEMS AND NON HETERO-SYSTEMSOKUSHI H; MATSUDA A; SAITO M et al.1972; SOLID STATE COMMUNIC.; G.B.; DA. 1972; VOL. 11; NO 1; PP. 283-286; ABS. RUSSE; BIBL. 8 REF.Serial Issue

FLUCTUATIONS ELECTRIQUES DANS DES DIODES IDEALISEES, NON DEGENEREES, A POLARISATION DIRECTEKARBA LP; KARPOV YU S; POROVSKIJ GS et al.1972; RADIOTEKHNIKA; S.S.S.R.; DA. 1972; VOL. 27; NO 5; PP. 62-66; BIBL. 5 REF.Serial Issue

LEO BANDWIDTH IMPROVEMENT BY BIPOLAR PULSINGDAWSON RW.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 7; PP. 697-699; BIBL. 5 REF.Article

SHOT NOISE IN BACK BIASED P-N SILICON DIODES.VAN DER ZIEL A.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 969-970; BIBL. 3 REF.Article

STEPS AND FINE STRUCTURE IN THE DRAIN CURRENT OF MISFETS AFTER X-IRRADIATION UNDER BIAS.VOLAND G; PAGNIA H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 3; PP. 211-215; BIBL. 13 REF.Article

THE SECOND BREAKDOWN IN REVERSE BIASED TRANSISTOR AS AN ELECTROTHERMAL SWITCHING.POPESCU C.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 428-436; BIBL. 17 REF.Article

BIAS-TEMPERATURE TREATMENT ON MOS CAPACITORS IRRADIATED WITH 1 MEV ELECTRONS.SAMINADAYAR K; PFISTER JC.1973; RAD. EFFECTS; G.B.; DA. 1973; VOL. 20; NO 1-2; PP. 55-64; BIBL. 14 REF.Article

POLARIZED MEMORY EFFECT OBSERVED ON SE-SNO₂ SYSTEMMATSUSHITA T; YAMAGAMI T; OKUDA M et al.1972; JAP. J. APPL. PHYS.; JAP.; DA. 1972; VOL. 11; NO 11; PP. 1657-1662; BIBL. 10 REF.Serial Issue

ELECTROFORMING AND SWITCHING IN MIM STRUCTURES UNDER PULSED BIAS.WILLIAMSON JPA; COLLINS RA.1975; INTERNATION. J. ELECTRON.; G.B.; DA. 1975; VOL. 38; NO 3; PP. 413-421; BIBL. 14 REF.Article

A NEGATIVE-IMPEDANCE SEMICONDUCTOR-DETECTOR BIAS SUPPLY.BRENDLE M; ENGE R.1975; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1975; VOL. 129; NO 1; PP. 279-282; BIBL. 3 REF.Article