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DETERMINATION OF THE DISSOCIATION ENERGIES OF THE MOLECULES TLSB(G) AND TLSB2(G) BY HIGH TEMPERATURE MASS SPECTROMETRYBALDUCCI G; FERRO D; PIACENTE V et al.1981; HIGH TEMP. SCI.; ISSN 0018-1536; USA; DA. 1981; VOL. 14; NO 3; PP. 207-212; BIBL. 12 REF.Article
Mécanisme de la conductivité thermique des composés TlSbS2 et TlSbSe2 à l'état solide et liquideMAGOMEDOV, YA. B; AGAEV, S. A; ALIEVA, KH. O et al.Fizika tverdogo tela. 1987, Vol 29, Num 5, pp 1607-1608, issn 0367-3294Article
Relaxation peculiarities in TlSbSe2 crystalsGRINCHESHEN, I. N; POPOVICH, N. S; SHTANOV, A. A et al.Physica status solidi. A. Applied research. 1984, Vol 85, Num 1, pp K85-K88, issn 0031-8965Article
Photokinetic effects in Ti3SbS3 single crystalsDOVGII, YA. O; KITYK, I. V; TYBULEWICZ, A et al.Soviet physics. Semiconductors. 1991, Vol 25, Num 10, pp 1108-1109, issn 0038-5700Article
Long-wavelength phonons in TlSbS2: raman-active modesROUQUETTE, P; ALLEGRE, J; CAMASSEL, J et al.Physical review. B, Condensed matter. 1988, Vol 38, Num 17, pp 12470-12478, issn 0163-1829Article
Polarization dependence of the infrared spectra of TlSbS2GOULLET, A; ROUQUETTE, P; CAMASSEL, J et al.Solid state communications. 1987, Vol 62, Num 3, pp 187-192, issn 0038-1098Article
InAsSb/InTlSb superlattice : A proposed heterostructure for long wavelength infrared detectorsIYER, S; LI, J; CHOWDHURY-NAGLE, S et al.Journal of electronic materials. 1997, Vol 26, Num 4, pp 347-349, issn 0361-5235Article
InTlSb : an infrared detector material ?VAN SCHILFGAARDE, M; SHER, A; AN-BAN CHEN et al.Applied physics letters. 1993, Vol 62, Num 16, pp 1857-1859, issn 0003-6951Article
Some experiments on the growth of InTlSb by LPERUIZ-BECERRIL, I; HERNANDEZ-SUSTAITA, M; DE ANDA, F et al.Journal of crystal growth. 2002, Vol 241, Num 1-2, pp 101-107, issn 0022-0248Article
Investigation of novel InTlSb and InSbBi alloys for uncooled photodetector applicationsLEE, J. J; RAZEGHI, M.SPIE proceedings series. 1998, pp 256-269, isbn 0-8194-2726-8Conference Paper
Two new examples of very short thallium-transition metal contacts : Tl3Ag3Sb2S6 and Tl3Ag3As2S6KARANOVIC, Ljiljana; POLETI, Dejan; BALIC-ZUNIC, Tonci et al.Journal of alloys and compounds. 2008, Vol 457, Num 1-2, pp 66-74, issn 0925-8388, 9 p.Article
InTlSb growth by OMVPEHUANG, K. T; COHEN, R. M; STRINGFELLOW, G. B et al.Journal of crystal growth. 1995, Vol 156, Num 4, pp 320-326, issn 0022-0248Article
Growth of In1-xTlxSb, a new infrared material, by low-pressure metalorganic chemical vapor depositionCHOI, Y. H; BESIKCI, C; SUDHARSANAN, R et al.Applied physics letters. 1993, Vol 63, Num 3, pp 361-363, issn 0003-6951Article
Comparison of In1-xTlx and Hg1-xCdxTe as long wavelength infrared materialsCHEN, A.-B; VAN SCHILFGAARDE, M; SHER, A et al.Journal of electronic materials. 1993, Vol 22, Num 8, pp 843-846, issn 0361-5235Conference Paper
Novel Sb-based alloys for uncooled infrared photodetector applicationsRAZEGHI, M.SPIE proceedings series. 2001, pp 304-315, isbn 0-8194-3966-5Conference Paper
