CONTACTS BETWEEN SIMPLE METALS AND ATOMICALLY CLEAN SILICON.THANAILAKIS A.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 5; PP. 655-668; BIBL. 23 REF.Article

TRANSITION-METAL CONTACTS TO ATOMICALLY CLEAN SILICON.THANAILAKIS A; RASUL A.1976; J. PHYS., C; G.B.; DA. 1976; VOL. 9; NO 2; PP. 337-343; BIBL. 18 REF.Article

P-TYPE SURFACE LAYERS ON N-TYPE SILICON HEAT-CLEANED IN UHV.MOTTRAM JD; THANAILAKIS A; NORTHROP DC et al.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 11; PP. 1316-1320; BIBL. 3 REF.Article

ANISOTROPIC INDIRECT ABSORPTION EDGE IN GESE.VLACHOS SV; LAMBROS AP; THANAILAKIS A et al.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 76; NO 2; PP. 727-735; ABS. ALLEM.; BIBL. 17 REF.Article

HYDROGEN ADSORPTION ON SILICON (111) SURFACES STUDIES BY AUGER ELECTRON SPECTROSCOPYTHANAILAKIS A; IOANNOU DF; REED CM et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 5; PP. 669-671; BIBL. 10 REF.Article

ACTIVATION ENERGY FOR THE SLOW STATES IN THE ALUMINIUM-GERMANIUM CONTACTTHANAILAKIS A; CHAN DS; NORTHROP DC et al.1972; J. PHYS. D; G.B.; DA. 1972; VOL. 5; NO 10; PP. 1930-1936; BIBL. 2 REF.Serial Issue

An adaptive genetic algorithm for VLSI circuit partitioningKARAFYLLIDIS, I; THANAILAKIS, A.International journal of electronics. 1995, Vol 79, Num 2, pp 205-214, issn 0020-7217Article

The effect of hydrogen content on the optoelectronic properties of amorphous silicon-carbide filmsGIRGINOUDI, D; THANAILAKIS, A.Journal of applied physics. 1991, Vol 69, Num 3, pp 1490-1493, issn 0021-8979, 4 p.Article

Direct computation of the array optimum tilt angle in constant-tilt photovoltaic systemsTSALIDES, P; THANAILAKIS, A.Solar cells. 1985, Vol 14, Num 1, pp 83-94, issn 0379-6787Article

Simulation of the image reversal submicron process in integrated circuit fabricationKARAFYLLIDIS, I; THANAILAKIS, A.Semiconductor science and technology. 1996, Vol 11, Num 2, pp 214-220, issn 0268-1242Article

Loss-of-load probability and related parameters in optimum computer-aided design of stand-alone photovoltaic systemsTSALIDES, P; THANAILAKIS, A.Solar cells. 1986, Vol 18, Num 2, pp 115-127, issn 0379-6787Article

Systematic methodology for designing low power direct digital frequency synthesisersKESOULIS, M; SOUDRIS, D; KOUKOURLIS, C et al.IET circuits, devices & systems (Print). 2007, Vol 1, Num 4, pp 293-304, issn 1751-858X, 12 p.Article

A single-electron three-input AND gateTSIMPERIDIS, I; KARAFYLLIDIS, I; THANAILAKIS, A et al.Microelectronics journal. 2002, Vol 33, Num 3, pp 191-195, issn 0959-8324Article

Reversible and irreversible effects on the electrical characteristics of new high-speed a-Si and a-SiC switchesDIMITRIADIS, E. I; GEORGOULAS, N; THANAILAKIS, A et al.Microelectronics journal. 1998, Vol 29, Num 1-2, pp 5-11, issn 0959-8324Article

A hybrid cellular automaton/neural network classifier for multi-valued patterns and its VLSI implementationTZIONAS, P; THANAILAKIS, A; TSALIDES, P et al.Integration (Amsterdam). 1996, Vol 20, Num 2, pp 211-237, issn 0167-9260Article

Bit-serial VLSI sorter with high reliability specificationsADAMIDES, E. D; TSALIDES, PH. G; THANAILAKIS, A et al.Microprocessing and microprogramming. 1994, Vol 40, Num 8, pp 523-536, issn 0165-6074Article

Real-time vector pipeline colour space transformerANDREADIS, I; TSALIDES, P; THANAILAKIS, A et al.International journal of electronics. 1993, Vol 74, Num 6, pp 835-843, issn 0020-7217Article

Structural and optical properties of a-SiC:H thin filmsMAGAFAS, L; GEORGOULAS, N; GIRGINOUDI, D et al.Journal of non-crystalline solids. 1992, Vol 139, Num 2, pp 146-150, issn 0022-3093Article

Simulation and experimental results on the switching behaviour of bulk-barrier diodesPAPADOPOULOU, P; GEORGOULAS, N; THANAILAKIS, A et al.Microelectronics journal. 2002, Vol 33, Num 5-6, pp 487-494, issn 0959-8324Article

A cellular automaton model for the effects of population movement and vaccination on epidemic propagationSIRAKOULIS, G. C; KARAFYLLIDIS, I; THANAILAKIS, A et al.Ecological modelling. 2000, Vol 133, Num 3, pp 209-223, issn 0304-3800Article

The influence of metal work function on electrical properties of metal/a-SiC :H Schottky diodesMAGAFAS, L; GEORGOULAS, N; THANAILAKIS, A et al.Microelectronics journal. 1997, Vol 28, Num 2, pp 107-114, issn 0959-8324Article

Electrical properties of a-SiC/c-Si(p) heterojunctionsMAGAFAS, L; GEORGOULAS, N; THANAILAKIS, A et al.Semiconductor science and technology. 1992, Vol 7, Num 11, pp 1363-1368, issn 0268-1242Article

Properties of amorphous non-hydrogenated silicon-tin alloysMITTAS, A; GEORGOULAS, N; GIRGINOUDI, D et al.Physica status solidi. A. Applied research. 1989, Vol 116, Num 2, pp 725-728, issn 0031-8965Article

An extensive study of the photocurrent amplification mechanism of silicon bulk-barrier diodes based on simulation and experimental resultsPAPADOPOULOU, P; GEORGOULAS, N; THANAILAKIS, A et al.Thin solid films. 2002, Vol 415, Num 1-2, pp 276-284, issn 0040-6090Article

Optical response of the Al/a-SiC/c-Si(p)/Au heterojunction structureMAGAFAS, L; GEORGOULAS, N; THANAILAKIS, A et al.Microelectronics journal. 2002, Vol 33, Num 9, pp 761-764, issn 0959-8324Article