PHOTOLUMINESCENCE STUDIES OF BOUND MULTIEXCITON COMPLEXES ASSOCIATED WITH LI IN SITHEWALT MLW.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 28; NO 5; PP. 361-364; BIBL. 17 REF.Article

EVEN-PARITY ACCEPTOR EXCITED STATES IN SI FROM BOUND EXCITON TWO HOLE TRANSITIONS.THEWALT MLW.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 23; NO 10; PP. 733-735; BIBL. 10 REF.Article

FINE STRUCTURE OF THE LUMINESCENCE FROM EXCITONS AND MULTIEXCITON COMPLEXES BOUND TO ACCEPTORS IN SI.THEWALT MLW.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 38; NO 9; PP. 521-524; BIBL. 15 REF.Article

COMMENTS ON "EXPERIMENTAL EVIDENCE AGAINST THE SHELL MODEL OF BOUND MULTIEXCITON IN SILICON".THEWALT MLW.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 8; PP. 513-517; BIBL. 10 REF.Article

EXCITED STATES OF DONOR BOUND EXCITONS AND BOUND MULTIEXITON COMPLEXES IN SILICON.THEWALT MLW.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 21; NO 10; PP. 937-939; BIBL. 10 REF.Article

EFFECTS OF UNIAXIAL STRESS ON THE LUMINESCENCE LINES DUE TO MULTIEXCITON COMPLEXES BOUND TO PHOSPHORUS IN SILICONTHEWALT MLW; ROSTWOROWSKI JA.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 12; PP. 808-812; BIBL. 10 REF.Article

BIEXCITONS IN SI.THEWALT MLW; ROSTWOROWSKI JA.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 12; PP. 991-993; BIBL. 17 REF.Article

PHOTOLUMINESCENCE IN HEAVILY DOPED SI:B AND SI:ASSCHMID PE; THEWALT MLW; DUMKE WP et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 11; PP. 1091-1093; BIBL. 9 REF.Article

CENTRAL CELL EFFECTS ON ACCEPTOR SPECTRA IN SI AND GELIPARI NO; BALDERESCHI A; THEWALT MLW et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 3; PP. 277-279; BIBL. 13 REF.Article

ENHANCEMENT OF LONG LIFETIME LINES IN PHOTOLUMINESCENCE FROM SI: INTHEWALT MLW; ZIEMELIS UO; PARSONS RR et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 39; NO 1; PP. 27-30; BIBL. 9 REF.Article

ISOELECTRONIC BOUND EXCITONS IN SILICON: THE ROLE OF DEEP ACCEPTORSTHEWALT MLW; ZIEMELIS UO; PARSONS RR et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 6; PP. 3655-3658; BIBL. 10 REF.Article

TEMPERATURE DEPENDENCE OF BE AND BMEC PHOTOLUMINESCENCE OF SI(LI) IN AN APPLIED MAGNETIC FIELDZIEMELIS UO; PARSONS RR; THEWALT MLW et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 3; PP. 253-257; BIBL. 17 REF.Article

PIEZOSPECTROSCOPIC STUDIES OF PHOSPHORUS-, BORON- AND LITHIUM-DOPED SILICONTHEWALT MLW; ROSTWOROWSKI JA; KIRCZENOW G et al.1979; CAN. J. PHYS.; ISSN 0008-4204; CAN; DA. 1979; VOL. 57; NO 11; PP. 1898-1923; ABS. FRE; BIBL. 42 REF.Article

DONOR-ACCEPTOR PAIR LUMINESCENCE IN SI (IN, LI): OBSERVATION OF THE IN-X CENTERZIEMELIS UO; THEWALT MLW; PARSONS RR et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 972-974; BIBL. 21 REF.Article

SPACE CHARGE FIELDS: A FRINGE TECHNIQUE FOR OBSERVING SUCH FIELDS DURING HOLOGRAM WRITING IN LINBO₃.CORNISH WD; YOUNG L; THEWALT MLW et al.1976; APPL. OPT.; U.S.A.; DA. 1976; VOL. 15; NO 5; PP. 1258-1260; BIBL. 12 REF.Article

LONG LIFETIME PHOTOLUMINESCENCE FROM A DEEP CENTRE IN COPPER-DOPED SILICONWATKINS SP; ZIEMELIS UO; THEWALT MLW et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 9; PP. 687-690; BIBL. 16 REF.Article

PHOTOLUMINESCENCE LIFETIME, ABSORPTION AND EXCITATION SPECTROSCOPY MEASUREMENTS ON ISOELECTRONIC BOUND EXCITONS IN BERYLLIUM-DOPED SILICONTHEWALT MLW; WATKINS SP; ZIEMELIS UO et al.1982; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1982; VOL. 44; NO 5; PP. 573-577; BIBL. 10 REF.Article

NON-OHMIC BEHAVIOR OF CIS-POLYACETYLENE DOPED WITH ASF₅MORTENSEN K; THEWALT MLW; TOMKIEWICZ Y et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 45; NO 6; PP. 490-493; BIBL. 22 REF.Article