THE PHASE RELATIONS IN THE CU, IN, S SYSTEM AND THE GROWTH OF CUINS₂ CRYSTALS FROM THE MELTTHIEL FA.1982; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 7; PP. 1570-1571; BIBL. 18 REF.Article

PHOTOVOLTAIC PROPERTIES OF P-N JUNCTIONS IN CUINS₂TELL B; THIEL FA.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5045-5046; BIBL. 8 REF.Article

STUDY OF DEEP LEVEL IN BULK P-INP BY ADMITTANCE SPECTROSCOPYKUO JM; THIEL FA.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 2; PP. 41-43; BIBL. 13 REF.Article

ETCHING AND X-RAY DIFFRACTION STUDIES OF THE 111-A AND 111-B FACES OF GA_XIN_1-X PY AS_1-Y CRYSTALSTHIEL FA; BARNS RL.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1272-1274; BIBL. 26 REF.Article

11.5% SOLAR CONVERSION EFFICIENCY IN THE PHOTOCATHODICALLY PROTECTED P-INP/V³⁺-V²⁺-HCL/C SEMICONDUCTOR LIQUID JUNCTION CELLHELLER A; MILLER B; THIEL FA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 4; PP. 282-284; BIBL. 18 REF.Article

THE GROWTH OF IN-RICH BULK SINGLE CRYSTALS OF GA_XIN_1-XP_YAS_1-Y VIA THE GRADIENT FREEZE METHOD.BACHMANN KJ; THIEL FA; FERRIS S et al.1978; J. CRYST. GROWTH; NLD; DA. 1978; VOL. 43; NO 6; PP. 752-755; BIBL. 24 REF.Article

MELT AND SOLUTION GROWTH OF BULK SINGLE CRYSTALS OF QUATERNARY III-V ALLOYSBACHMANN KJ; THIEL FA; SCHREIBER H JR et al.1979; PROGR. CRYST. GROWTH CHARACTER.; GBR; DA. 1979; VOL. 2; NO 3; PP. 171-206; BIBL. 131 REF.Article

CONTACTS TO P-TYPE INP.THIEL FA; BACON DD; BUEHLER E et al.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 2; PP. 317-318; BIBL. 8 REF.Article

NONLINEAR OPTICAL SUSCEPTIBILITY OF HGGA₂S₄.LEVINE BF; BETHEA CG; KASPER HM et al.1976; I.E.E.E. J. QUANTUM ELECTRON; U.S.A.; DA. 1976; VOL. 12; NO 6; PP. 367-368; BIBL. 9 REF.Article

DEBYE TEMPERATURE AND STANDARD ENTROPIES AND ENTHALPIES OF COMPOUND SEMICONDUCTORS OF THE TYPE I-III-VI₂.BACHMANN KJ; HSU FSL; THIEL FA et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 4; PP. 431-448; BIBL. 2 P.Article

ELECTROLYTE-OXIDE-SEMICONDUCTOR JUNCTION AT THE P-INP/V²⁺-V³⁺ INTERFACEMENEZES S; LEWERENZ HJ; THIEL FA et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 9; PP. 710-712; BIBL. 13 REF.Article

THE CURRENT STATUS OF THE PREPARATION OF SINGLE CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS.BACHMANN KJ; BUEHLER E; MILLER BI et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 39; NO 1; PP. 137-150; BIBL. 1 P. 1/2Article

THE PREPARATION OF GA-RICH GA_XIM_1-XSB ALLOY CRYSTALSBACHMANN KJ; THIEL FA; SCHREIBER H JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 2; PP. 445-452; BIBL. 16 REF.Article

CHEMISTRY AND PREPARATION OF III-V HETEROJUNCTION SOLAR CELLSBACHMANN KJ; THIEL FA; SCHREIBER H JR et al.1980; PHOTOVOLTAIC SPECIALISTS CONFERENCE. 1980. 14/1980/SAN DIEGO CA; USA; NEW YORK: IEEE; DA. 1980; PP. 1343-1344; BIBL. 10 REF.Conference Paper

PREPARATION AND PROPERTIES OF BULK GA_XIN_1-XAS CRYSTALSLEU YT; THIEL FA; SCHEIBER H JR et al.1979; J. ELECTRON. MATER.; USA; DA. 1979; VOL. 8; NO 5; PP. 663-674; BIBL. 25 REF.Article

N-INDIUM TIN OXIDE/P-INDIUM PHOSPHIDE SOLAR CELLS.SREE HARSHA KS; BACHMANN KJ; SCHMIDT PH et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 12; PP. 645-646; BIBL. 11 REF.Article

SOLAR-CELL CHARACTERISTICS AND INTERFACIAL CHEMISTRY OF INDIUM-TIN-OXIDE/INDIUM PHOSPHIDE AND INDIUM-TIN-OXIDE/GALLIUM ARSENIDE JUNCTIONSBACHMANN KJ; SCHREIBER H JR; SINCLAIR WR et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3441-3446; BIBL. 12 REF.Article

CUINS₂ LIQUID JUNCTION SOLAR CELLS.ROBBINS M; BACHMANN KJ; LAMBRECHT VG et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 5; PP. 831-832; BIBL. 6 REF.Article