THIN FILM OPTICAL COATINGS. II. THREE-LAYER ANTIREFLECTION COATING THEORY.MOUCHART J.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 10; PP. 2722-2728; BIBL. 11 REF.Article

ABSORPTANCE OF THIN FILMS.BUCKLEY RG; BEAGLEHOLE D.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 9; PP. 2495-2499; BIBL. 7 REF.Article

THIN FILM INTEGRATED RC-NETWORKS WITH COMPENSATED TEMPERATURE COEFFICIENTS OF R AND C.POTZLBERGER HW.1977; ELECTROCOMPON. SCI. TECHNOL.; G.B.; DA. 1977; VOL. 4; NO 3-4; PP. 139-142; BIBL. 7 REF.Article

SIMPLE METHOD FOR THE COMPLETE OPTICAL ANALYSIS OF VERY THICK AND WEAKLY ABSORBING FILMSOHLIDAL I; NAVRATIL K; SCHMIDT E et al.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 3; PP. 157-162; BIBL. 22 REF.Article

HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE SILICON FILMSKAMINS TF; MARCOUX PJ.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 8; PP. 159-161; BIBL. 10 REF.Article

MATRIX DISPLAYS: LED, THIN-FILM-TRANSISTOR, AND THIN-FILM ELECTROLUMINESCENCE.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 7; PP. 891-917; BIBL. DISSEM.Article

THIN FILM OPTICAL COATINGS. I. OPTICAL COATING STABILITIES.MOUCHART J.1977; APPL. OPT.; U.S.A.; DA. 1977; VOL. 16; NO 9; PP. 2486-2490; BIBL. 3 REF.Article

MODIFICATION DE LA RESISTANCE D'UNE COUCHE MINCE DE CDSE AU COURS D'UNE DESORPTION THERMIQUE D'O₂ OU DE COFORTIN B; COLIN Y.1982; VIDE COUCHES MINCES; ISSN 0223-4335; FRA; DA. 1982; VOL. 37; NO 211; PP. 149-152Article

REMARKS ON AN ANALYTIC SOLUTION TO THE SYNTHESIS PROBLEM FOR DIELECTRIC LAYERS WHICH IS COMPATIBLE WITH THE DIELECTRICS AVAILABLEHIRSCH J.1981; OPT. ACTA; ISSN 0030-3909; GBR; DA. 1981; VOL. 28; NO 3; PP. 429-434; ABS. FRE/GER; BIBL. 3 REF.Article

OBSERVATION OF ELECTROMIGRATION IN HEAVILY DOPED POLYCRYSTALLINE SILICON THIN FILMSLLOYD JR; POLCARI MR; MACKENZIE GA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 6; PP. 428-430; BIBL. 16 REF.Article

THIN-FILM TRANSISTOR SWITCHING OF THIN-FILM ELECTROLUMINESCENT DISPLAY ELEMENTSKUN ZK; LUO FC; MURPHY J et al.1980; PROC. SOC. INF. DISP.; USA; DA. 1980; VOL. 21; NO 2; PP. 85-91; BIBL. 7 REF.Article

REVETEMENTS INTERFERENTIELS SPECULAIRES METALLODIELECTRIQUES A SOLIDITE MECANIQUE ACCRUEFURMAN SH A; VVEDENSKIJ VD.1977; OPT.-MEKH. PROMYSHL.; S.S.S.R.; DA. 1977; VOL. 44; NO 5; PP. 41-43; BIBL. 6 REF.Article

THIN FILM OPTICAL COATINGS. VII. TWO-LAYER COATINGS CLOSE TO ANTIREFLECTIONMOUCHART J; BEGEL J; CHALOT S et al.1979; APPL. OPT.; USA; DA. 1979; VOL. 18; NO 8; PP. 1226-1232; BIBL. 14 REF.Article

GAAS LSI-DIRECTED MESFET'S WITH SELF-ALIGNED IMPLANTATION FOR N⁺-LAYER TECHNOLOGY (SAINTYAMASAKI K; ASAI K; KURAMADA K et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1772-1777; BIBL. 18 REF.Article

SHORT-CHANNEL MOS TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIMEMULLER W; RISCH L; SCHUTZ A et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1778-1784; BIBL. 13 REF.Article

A NOVEL BURIED-DRAIN DMOSFET STRUCTUREFICHTNER W; COOPER JA JR; TRETOLA AR et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1785-1791; BIBL. 36 REF.Article

ELECTRICAL PROPERTIES OF BULK-BARRIER DIODESMADER H.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1766-1771; BIBL. 12 REF.Article

FET PHOTODETECTORS: A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATIONNOAD JP; HARA EH; HUM RH et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1792-1797; BIBL. 14 REF.Article

HAFTFESTIGKEIT VON ALUMINIUMSCHICHTEN AUF SILIZIUM-SUBSTRATEN = ADHERENCE DE COUCHES D'ALUMINIUM SUR LES SUBSTRATS EN SILICIUMHESS S; VILBRANDT R; LEHMANN J et al.1982; EXPERIMENTELLE TECHNIK DER PHYSIK; ISSN 0014-4924; DDR; DA. 1982; VOL. 30; NO 5; PP. 451-454; ABS. RUS/ENG; BIBL. 16 REF.Article

A NOTATION FOR DESIGNING RESTORING LOGIC CIRCUITRY IN CMOSREM M; MEAD C.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 5-10; BIBL. 3 REF.Article

DRAIN-CURRENT DISTORTION IN CDSE THIN-FILM TRANSISTORSWYSOCKI JJ.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1798-1805; BIBL. 7 REF.Article

CALCUL ET MISE AU POINT DES ATTENUATEURS A COUCHE MINCESADKOV VD.1977; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1977; VOL. 20; NO 9; PP. 115-118; BIBL. 6 REF.Article

ELECTRON-VELOCITY SATURATION AT A BJT COLLECTOR JUNCTION UNDER LOW-LEVEL CONDITIONSWARNER RM JR; DONG HYUK JU; GRUNG BL et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 3; PP. 230-236; BIBL. 26 REF.Article

STATE OF METROLOGIC CONTROL GUARANTEE FOR EXTREMELY THIN COATING THICKNESSTSEJTLIN YA M.1980; DEFEKTOSKOPIJA; ISSN 0130-3082; SUN; DA. 1980; NO 6; PP. 78-81; BIBL. 5 REF.Article

INTERNATIONAL CONFERENCE ON THIN- AND THICK-FILM TECHNOLOGY.HERZOG HJ.1977; NACHR. ELEKTRON.; DTSCH.; DA. 1977; VOL. 31; NO 11; PP. 334-336Article