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SHORT-CHANNEL MOS TRANSISTORS IN THE AVALANCHE-MULTIPLICATION REGIMEMULLER W; RISCH L; SCHUTZ A et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1778-1784; BIBL. 13 REF.Article

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FET PHOTODETECTORS: A COMBINED STUDY USING OPTICAL AND ELECTRON-BEAM STIMULATIONNOAD JP; HARA EH; HUM RH et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1792-1797; BIBL. 14 REF.Article

A NOTATION FOR DESIGNING RESTORING LOGIC CIRCUITRY IN CMOSREM M; MEAD C.1982; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1982; VOL. 13; NO 6; PP. 5-10; BIBL. 3 REF.Article

DRAIN-CURRENT DISTORTION IN CDSE THIN-FILM TRANSISTORSWYSOCKI JJ.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1798-1805; BIBL. 7 REF.Article

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