Epitaxial Si-based tunnel diodesTHOMPSON, P. E; HOBART, K. D; TWIGG, M. E et al.Thin solid films. 2000, Vol 380, Num 1-2, pp 145-150, issn 0040-6090Conference Paper

Tropane-based amino acids for peptide structure-function studies : Inhibitors of platelet aggregationTHOMPSON, P. E; STEER, D. L; AGUILAR, M.-I et al.Bioorganic & medicinal chemistry letters (Print). 1998, Vol 8, Num 19, pp 2699-2704, issn 0960-894XArticle

Novel SMC formulation for class a finishesHOFFMAN, J. D; THOMPSON, P. E; MILLER, J. S et al.Composites go to market. SPI Annual conference preprint. 39. 1984, pp 14.D.1-14.D.8Conference Paper

Damaged-induced isolation in n-type InP by light-ion implantationTHOMPSON, P. E; BINARI, S. C; DIETRICH, H. B et al.Solid-state electronics. 1983, Vol 26, Num 8, pp 805-810, issn 0038-1101Article

Use of Kv1.3 Blockers for Inflammatory Skin ConditionsNGUYEN, W; HOWARD, B. L; NEALE, D. S et al.Current medicinal chemistry. 2010, Vol 17, Num 26, pp 2882-2896, issn 0929-8673, 15 p.Article

Stability of shallow junctions: Issue and solutionLIN SHAO; THOMPSON, P. E; WANG, X. M et al.Proceedings - Electrochemical Society. 2004, pp 82-89, issn 0161-6374, isbn 1-56677-406-3, 8 p.Conference Paper

Atomic profiles and electrical characteristics of very high energy (8-20 MeV) Si implants in GaAsTHOMPSON, P. E; DIETRICH, H. B; ERIDON, J. M et al.Journal of applied physics. 1990, Vol 67, Num 3, pp 1262-1265, issn 0021-8979Article

Molecular beam epitaxy growth of InSb films on GaAsDAVIS, J. L; THOMPSON, P. E.Applied physics letters. 1989, Vol 54, Num 22, pp 2235-2237, issn 0003-6951, 3 p.Article

Deep radiative levels in as-grown and implanted rapid thermal annealed InPRAO, M. V; AINA, O. A; AYUB FATHIMULLA et al.Journal of applied physics. 1988, Vol 64, Num 5, pp 2426-2433, issn 0021-8979Article

High-speed planar GaAs photoconductors with surface implant layersANDERSON, G. W; PAPANICOLAOU, N. A; THOMPSON, P. E et al.Applied physics letters. 1988, Vol 53, Num 4, pp 313-315, issn 0003-6951Article

Experimental microwave results on an ion-implanted GaAs slow-wave monolithic structureKROWNE, C. M; THOMPSON, P. E.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 5, pp 1183-1186, issn 0018-9383, 2Article

Device isolation by oxygen implantation in n-type indium phosphideTHOMPSON, P. E; BINARI, S. C; DIETRICH, H. B et al.Solid-state electronics. 1984, Vol 27, Num 8-9, pp 817-818, issn 0038-1101Article

Nurse managed prenatal programs affect outcomes for corporationsTHOMPSON, P. E; BITOWSKI, B. E; BELL, P. L et al.The Nursing clinics of North-America. 1997, Vol 32, Num 3, pp vi-vii, issn 0029-6465, 9 p.Article

Si/Si_1-xGe_x heterojunction bipolar transistors with high breakdown voltageHOBART, K. D; KUB, F. J; PAPANICOLOAU, N. A et al.IEEE electron device letters. 1995, Vol 16, Num 5, pp 205-207, issn 0741-3106Article

Sb surface segregation and doping in Si(100) grown at reduced temperature by molecular beam epitaxyHOBART, K. D; GODBEY, D. J; THOMPSON, P. E et al.Applied physics letters. 1993, Vol 63, Num 10, pp 1381-1383, issn 0003-6951Article

Optically detected magnetic resonance of sharp luminescence from Si/Si_1-xGe_x superlatticesKENNEDY, T. A; GLASER, E. R; GODBEY, D. J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 1154-1158, issn 1071-1023Conference Paper

Near band-edge photoluminescence from Si_1-xGe_x/Si superlattices grown by molecular-beam epitaxySTEINER, T. D; HENGEHOLD, R. L; YEO, Y. K et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 924-926, issn 0734-211XConference Paper

Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxyTHOMPSON, P. E; DAVIS, J. L; WATERMAN, J et al.Journal of applied physics. 1991, Vol 69, Num 10, pp 7166-7172, issn 0021-8979Article

Atomic and carrier profiles of 1-, 2-, 4-, and 6-MeV ³⁰Si implanted into GaAsTHOMPSON, P. E; WILSON, R. G; INGRAM, D. C et al.Journal of applied physics. 1989, Vol 65, Num 8, pp 2986-2990, issn 0021-8979, 5 p.Article

OMVPE growth of p-AlGaAs/GaAs heterojunctions using diethylberylliumSILLMON, R. S; HUES, S. M; GASKILL, D. K et al.Journal of electronic materials. 1989, Vol 18, Num 4, pp 501-504, issn 0361-5235, 4 p.Article

Planar, linear GaAs detector-amplifier array with an insulating AlGaAs spacing layer between the detector and transistor layersANDERSON, G. W; PAPANICOLAOU, N. A; MA, D. I et al.IEEE electron device letters. 1988, Vol 9, Num 10, pp 550-552, issn 0741-3106Article

Polymers as masks for ion implantationPAPANICOLAOU, N. A; THOMPSON, P. E; CORAZZI, R. J et al.Journal of electronic materials. 1987, Vol 16, Num 1, pp 33-38, issn 0361-5235Article

The cross-reaction between 1-methoxycarbonyl- and 1-butoxycarbonyl-1-methylethyl: simultaneous generation of unlike radicals from an unsymmetrical azo precursorKELLY, D. P; SERELIS, A. K; SOLOMON, D. H et al.Australian journal of chemistry. 1987, Vol 40, Num 10, pp 1631-1639, issn 0004-9425Article

Planar fully ion implanted InP power junction FET'sBOOS, J. B; BINARI, S. C; KELNER, G et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 273-276, issn 0741-3106Article

Improved vertically stacked Si/SiGe resonant interband tunnel diode pair with small peak voltage shift and unequal peak currentsJIN, N; CHUNG, S. Y; YU, R et al.Electronics Letters. 2004, Vol 40, Num 24, pp 1548-1550, issn 0013-5194, 3 p.Article