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POLARIZATION CONTROL OF AN ANTIREFLECTION-COATED GAALAS LASER DIODE BY AN EXTERNAL OPTICAL FEEDBACKMITSUHASHI Y.1982; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 9200-9201; BIBL. 7 REF.Article

QUANTUM DESCRIPTION OF A DYE LASER THRESHOLD REGIONSTEFANSKI K.1982; ZEITSCHRIFT FUER PHYSIK B. CONDENSED MATTER; ISSN 0722-3277; DEU; DA. 1982; VOL. 45; NO 4; PP. 351-361; BIBL. 15 REF.Article

LAPLACE TRANSFORM ANALYSIS OF LASER'S SECOND THRESHOLDBENZA V; MONTALDI E.1982; ZEITSCHRIFT FUER PHYSIK B. CONDENSED MATTER; ISSN 0722-3277; DEU; DA. 1982; VOL. 45; NO 3; PP. 259-263; BIBL. 6 REF.Article

BOUND-FREE EMISSION IN HGBRLAPATOVICH WP; GIBBS GR; PROUD JM et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 786-788; BIBL. 15 REF.Article

EFFECT OF RANDOM APERIODICITY ON THRESHOLD GAIN OF A DISTRIBUTED FEEDBACK SEMICONDUCTOR LASERHSIEH HC; STEWART RW.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 4; PP. 2674-2681; BIBL. 27 REF.Article

TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT FOR A QUANTUM-WELL HETEROSTRUCTURE LASERHESS K; VOJAK BA; HOLONYAK N JR et al.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 6; PP. 585-589; BIBL. 18 REF.Article

THRESHOLD NOISE AND THE LASER TRANSIENTHUTH WA; MATTHYS DR.1980; APPL. OPT.; ISSN 0003-6935; USA; DA. 1980; VOL. 19; NO 17; PP. 2943-2947; BIBL. 11 REF.Article

ABOVE-THRESHOLD ANALYSIS OF DOUBLE-HETEROSTRUCTURE DIODE LASERS WITH LATERALLY TAPERED ACTIVE REGIONSSTREIFER W; SCIFRES DR; BURNHAM RD et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 877-879; BIBL. 17 REF.Article

ABSORPTION EDGE EFFECTS ON THE TEMPERATURE DEPENDENCE OF THRESHOLD CURRENTS IN GAAS LASER DIODES.WINOGRADOFF NN; SACILOTTI MA.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 22; NO 8; PP. 489-492; ABS. FR.; BIBL. 15 REF.Article

THRESHOLD ENERGY OF ND: YAG LASER AS A FUNCTION OF NEODYMIUM CONCENTRATION.MORI K; MASUMOTO T; SHIROKI K et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 9; PP. 1829-1830; BIBL. 4 REF.Article

EFFECT OF GROWTH TERRACES ON THRESHOLD CURRENT DENSITY OF (GAAL) AS DOUBLE-HETEROSTRUCTURE LASERSHIMA K; SEGI K; IMAI H et al.1980; APPL. PHYS. LETTERS; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 4; PP. 341-343; BIBL. 6 REF.Article

STIMULATED RAMAN SCATTERING THRESHOLDS FOR ULTRA-SHORT EXCITATIONGAZENGEL J; NGUYEN PHU XUAN; RIVOIRE G et al.1979; OPT. ACTA; GBR; DA. 1979; VOL. 26; NO 10; PP. 1245-1255; ABS. FRE/GER; BIBL. 33 REF.Article

THE TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERSETTENBERG M; NUESE CJ; KRESSEL H et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2949-2950; BIBL. 7 REF.Article

DAMAGE THRESHOLS AT METAL SURFACES FOR SHORT PULSE IR LASERSFIGUEIRA JF; THOMAS SJ.1982; IEEE JOURNAL OF QUANTUM ELECTRONICS; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 9; PP. 1381-1386; BIBL. 16 REF.Article

THE ENERGY THRESHOLD OF COSMIC RAY MUON DETECTORSBLAKE PR; NASH WF; SALTMARSH CG et al.1980; NUCL. INSTRUM. METHODS; NLD; DA. 1980; VOL. 171; NO 1; PP. 153-156; BIBL. 10 REF.Article

THRESHOLD SINGULARITIES OF OPTICALLY PUMPED DYE LASERSHEUDORFER W; MAROWSKY G.1978; APPL. THYS.; DEU; DA. 1978; VOL. 17; NO 2; PP. 181-187; BIBL. 18 REF.Article

CIRCUIT MODEL OF DOUBLE-HETEROJUNCTION LASER BELOW THRESHOLDTUCKER RS.1981; IEE PROC., PART I; ISSN 0143-7100; GBR; DA. 1981; VOL. 128; NO 3; PP. 101-106; BIBL. 18 REF.Article

DETERMINATION OF LASER DAMAGE THRESHOLDS BY COMPARISON WITH AN ABSOLUTE LASER DAMAGE STANDARDMILAM D; WILLIS JB; RAINER F et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 402-404; BIBL. 5 REF.Article

INFLUENCE OF GROWTH CONDITIONS ON THE THRESHOLD CURRENT DENSITY OF DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXYCHO AY; CASEY HC JR; RADICE C et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 2; PP. 72-74; BIBL. 11 REF.Article

MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE DEPENDENCE OF ITS THRESHOLD CURRENTARAKAWA Y; SAKAKI H.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 11; PP. 939-941; BIBL. 8 REF.Article

A GRADED-INDEX WAVEGUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN BEAMTSANG WT.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 2; PP. 134-137; BIBL. 14 REF.Article

CALCULATIONS ON LASING THRESHOLD IN LASER DIODESPREM SWARUP; MURALIDHARAN R.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 5; PP. 319-321; BIBL. 8 REF.Article

COURANT DE SEUIL EN FONCTION DE LA TEMPERATURE DANS LES LASERS A INJECTION EN GAPASADKHAMOV AA; ISMAILOV I; TSIDULKO IM et al.1976; DOKL. AKAD. NAUK TADZHIK. S.S.R.; S.S.S.R.; DA. 1976; VOL. 19; NO 9; PP. 19-22; ABS. TADJ.; BIBL. 9 REF.Article

MODIFIED MILLIKAN CAPACITOR FOR PHOTOEMISSION STUDIESALTWEGG L; POPE M; ARNOLD S et al.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 3; PP. 332-337; BIBL. 10 REF.Article

TEMPERATURE DEPENDENCE OF THRESHOLD CURRENT OF GAAS QUANTUM WELL LASERSDUTTA NK.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 11; PP. 451-453; BIBL. 8 REF.Article

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