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Low-loss high-power static induction thyristors for complementary circuitsKUSHIDA, T; TADANO, H; HASHIMOTO, S et al.IEEE transactions on industry applications. 1988, Vol 24, Num 1, pp 132-136, issn 0093-9994Conference Paper

A double-gate-type static-induction thyristorNISHIZAWA, J.-I; YUKIMOTO, Y; KONDOU, H et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 6, pp 1396-1406, issn 0018-9383Article

SOLID STATE DEVICES. POWER RECTIFIERS AND THYRISTORS1979; IEDM 1979. INTERNATIONAL ELECTRON DEVICES MEETING/1979/WASHINGTON DC; USA; NEW YORK: IEEE; DA. 1979; PP. 237-677; (26 P.); BIBL. DISSEM.Conference Paper

Evaluation of modern power semiconductor devices and future trends of convertersBOSE, B. K.IEEE transactions on industry applications. 1992, Vol 28, Num 2, pp 403-413, issn 0093-9994Conference Paper

Predictive relationship for dV/dt-capability of static induction (field-controlled) thyristorsSILARD, A. P; DUTA, M. J.Revue roumaine des sciences techniques. Electrotechnique et énergétique. 1991, Vol 36, Num 4, pp 511-515, issn 0035-4066Article

Static induction thyristor with a deep trench structureNIE ZHENG; LI SIYUAN; SHAO JIAFENG et al.Semiconductor science and technology. 2009, Vol 24, Num 2, issn 0268-1242, 025004.1-025004.6Article

Over 55kV/μs, dv/dt turn-off characteristics of 4kV-Static induction thyristor for pulsed power applicationsSHIMIZU, N; SEKIYA, T; IIDA, K et al.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 281-284, isbn 4-88686-060-5, 4 p.Conference Paper

Frequency doubler-type SIT high frequency inverter and analysis of the transient and steady-state characteristicsHATANAKA, Y; NAKAOKA, M; MARUHASHI, T et al.Electrical engineering in Japan. 1987, Vol 107, Num 3, pp 122-130, issn 0424-7760Article

Fabrication and optical-switching results on the integrated light-triggered and Quenched static induction thyristorNISHIZAWA, J.-I; TAMAMUSHI, T; NONAKA, K.-I et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 2031-2040, issn 0018-9383Article

Very high speed static induction thyristorNAKAMURA, Y; TADANO, H; TAKIGAWA, M et al.IEEE transactions on industry applications. 1986, Vol 22, Num 6, pp 1000-1006, issn 0093-9994Conference Paper

POWER DEVICES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 725-740; ABS. FRE; BIBL. DISSEM.Conference Paper

Characteristics of the high-speed SI thyristor and its application to the 60-kHz 100-kW high-efficiency inverterMURAOKA, K; KAWAMURA, Y; OHTSUBO, Y et al.IEEE transactions on power electronics. 1989, Vol 4, Num 1, pp 92-100, issn 0885-8993, 9 p.Article

Physical Features of the Barrier-Controlled Blocking Function of the Static Induction ThyristorHAIRONG LI; SIYUAN LI.I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 4, pp 1149-1157, issn 0018-9383, 9 p.Article

High speed turn-on reverse conducting 4 kV static induction thyristors based on the buried gate type p-base n-emitter soft contact structure and anti-parallel diodes for solid-state power supplies in high energy acceleratorsSHIMIZU, N; MIYOSHI, M; IMANISHI, Y et al.Solid-state electronics. 2006, Vol 50, Num 9-10, pp 1567-1578, issn 0038-1101, 12 p.Article

Composants de l'électronique de puissance = Power electronics componentsBERNOT, Francois.Techniques de l'ingénieur. Electronique. 2000, Vol 3, Num E3960, pp 1-18, issn 0399-4120, 18 p.Article

Compact solid-state switched pulsed power and its applicationsJIANG, Weihua; YATSUI, Kiyoshi; TAKAYAMA, Ken et al.Proceedings of the IEEE. 2004, Vol 92, Num 7, pp 1180-1196, issn 0018-9219, 17 p.Article

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