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OXYGEN PRECIPITATION AND THE GENERATION OF DISLOCATIONS IN SILICON.TAN TY; TICE WK.1976; PHILOS. MAG.; G.B.; DA. 1976; VOL. 34; NO 4; PP. 615-631; BIBL. 17 REF.Article

CRITICAL MICROSTRUCTURE FOR ION-IMPLANTATION GETTERING EFFECTS IN SILICON.GEIPEL HJ; TICE WK.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 7; PP. 325-327; BIBL. 7 REF.Article

REDUCTION OF LEAKAGE BY IMPLANTATION GETTERING IN VLSI CIRCUITSGEIPEL HJ; TICE WK.1980; I.B.M. J. RES. DEVELOP.; USA; DA. 1980; VOL. 24; NO 3; PP. 310-317; BIBL. 17 REF.Article

CIRCULAR STACKING FAULTS IN SILICON.TICE WK; HUANG TC.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 4; PP. 157-158; BIBL. 8 REF.Article

INTRINSIC GETTERING BY OXIDE PRECIPITATE INDUCED DISLOCATIONS IN CZOCHRALSKI SI.TAN TY; GARDNER EE; TICE WK et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 4; PP. 175-176; BIBL. 10 REF.Article

NUCLEATION OF STACKING FAULTS AT OXIDE PRECIPITATE-DISLOCATION COMPLEXES IN SILICON.TAN TY; WU LL; TICE WK et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 12; PP. 765-767; BIBL. 14 REF.Article

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