A microcomputer-controlled temperature controllerTIN, C. C.Analytical instrumentation. 1985, Vol 14, Num 1, pp 63-75, issn 0743-5797Article

Effects of RF bias on remote microwave plasma assisted etching of silicon in SF₆TIN, C. C; LIN, T. H; TZENG, Y et al.Journal of the Electrochemical Society. 1991, Vol 138, Num 10, pp 3094-3100, issn 0013-4651Article

Electrophoretic deposition of magnesium silicates on titanium implants: Ion migration and silicide interfacesAFSHAR-MOHAJER, M; YAGHOUBI, A; RAMESH, S et al.Applied surface science. 2014, Vol 307, pp 1-6, issn 0169-4332, 6 p.Article

A three-region analytical model for short-channel SiC MESFETsZHU, C. L; RUSLI; TIN, C. C et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 96-99, issn 0167-9317, 4 p.Conference Paper

Surface chemical states on 3C-SiC/Si epilayersWEE, A. T. S; FENG, Z. C; HNG, H. H et al.Applied surface science. 1994, Vol 81, Num 4, pp 377-385, issn 0169-4332Article

Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with ⁴He⁺ ionsTIN, C. C; BARNES, P. A; WILLIAMS, J. R et al.Journal of applied physics. 1989, Vol 66, Num 9, pp 4201-4205, issn 0021-8979, 5 p.Article

Improved performance of SiC MESFETs using double-recessed structureZHU, C. L; RUSLI; TIN, C. C et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 92-95, issn 0167-9317, 4 p.Conference Paper

Lateral overgrowth and epitaxial lift-off of InP by halide vapor-phase epitaxyPARK, J; BARNES, P. A; TIN, C. C et al.Journal of crystal growth. 1998, Vol 187, Num 2, pp 185-193, issn 0022-0248Article

Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapour depositionFENG, Z. C; TIN, C. C; HU, R et al.Semiconductor science and technology. 1995, Vol 10, Num 10, pp 1418-1422, issn 0268-1242Article

States of copper during diffusion in semi-insulating GaAsTIN, C. C; TEH, C. K; WEICHMAN, F. L et al.Journal of applied physics. 1988, Vol 63, Num 2, pp 355-359, issn 0021-8979Article

Defect studies of electrothermal stress of InP metal-oxide-semiconductor structuresTIN, C. C; BARNES, P. A.Journal of applied physics. 1989, Vol 66, Num 1, pp 223-229, issn 0021-8979, 7 p.Article

Investigation of Ta₂O₅/SiO₂/4H-SiC MIS capacitorsZHAO, P; RUSLI; LOK, B. K et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 58-60, issn 0167-9317, 3 p.Conference Paper

Surface chemical states on LPCVD-grown 4H-SiC epilayersWEE, A. T. S; LI, K; TIN, C. C et al.Applied surface science. 1998, Vol 126, Num 1-2, pp 34-42, issn 0169-4332Article

Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor depositionFENG, Z. C; ROHATGI, A; TIN, C. C et al.Journal of electronic materials. 1996, Vol 25, Num 5, pp 917-923, issn 0361-5235Article

Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor depositionFENG, Z. C; TIN, C. C; HU, R et al.Thin solid films. 1995, Vol 266, Num 1, pp 1-7, issn 0040-6090Article

DC characterization of 4H-SiC depletion mode MOS field effect transistorZHAO, P; RUSLI; ZHU, C. L et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 384-387, issn 0038-1101, 4 p.Article

The role of oxygen in electron cyclotron resonance etching of silicon carbideXIA, J. H; RUSLI; CHOY, S. F et al.Microelectronic engineering. 2006, Vol 83, Num 1, pp 9-11, issn 0167-9317, 3 p.Conference Paper

Metalorganic chemical vapor deposition-grown AlN on 6H-SiC for metal-insulator-semiconductor device applicationsTIN, C. C; SONG, Y; ISAACS-SMITH, T et al.Journal of electronic materials. 1997, Vol 26, Num 3, pp 212-216, issn 0361-5235Article

Reduction of etch pits in heteroepitaxial growth of 3C-SiC on siliconTIN, C. C; HU, R; COSTON, R. L et al.Journal of crystal growth. 1995, Vol 148, Num 1-2, pp 116-124, issn 0022-0248Article