Comparison of semiconductor transport models using a Monte Carlo consistency testSRIDHAR RAMASWAMY; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 1, pp 76-83, issn 0018-9383Article

Thermionic emission in a hydrodynamic model for heterojunction structuresHJELMGREN, H; TING-WEI TANG.Solid-state electronics. 1994, Vol 37, Num 9, pp 1649-1657, issn 0038-1101Article

A revised boundary condition for the numerical analysis of Schottky barrier diodesADAMS, J; TING-WEI TANG.IEEE electron device letters. 1986, Vol 7, Num 9, pp 525-527, issn 0741-3106Article

LOCATION OF TURNING POINTS FOR LOWER HYBRID WAVES IN INHOMOGENEOUS MAGNETIC FIELDSTING WEI TANG.1980; PLASMA PHYS.; GBR; DA. 1980; VOL. 22; NO 5; PP. 439-451; BIBL. 8 REF.Article

Numerical modeling of hot carriers in submicrometer silico BJT'sHSIN-SHIUNG OU; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 7, pp 1533-1539, issn 0018-9383Article

NONLINEAR STANDING LANGMUIR WAVES.TING WEI TANG; MOTZ H.1977; I.E.E.E. TRANS. PLASMA SCI.; U.S.A.; DA. 1977; VOL. 5; NO 4; PP. 297-300; BIBL. 9 REF.Article

RF COUPLING AND MODE CONVERSIONS AT THE LOWER HYBRID RESONANCE.WONG KC; TING WEI TANG.1976; PLASMA PHYS.; G.B.; DA. 1976; VOL. 18; NO 12; PP. 911-928; BIBL. 21 REF.Article

WAVES IN INHOMOGENEOUS MAGNETOPLASMASSIVASUBRAMANIAN A; TING WEI TANG.1972; PHYS. REV., A; U.S.A.; DA. 1972; VOL. 6; NO 6; PP. 2257-2268; BIBL. 17 REF.Serial Issue

Discretization of flux densities in device simulations using optimum artificial diffusivityTING-WEI TANG; MEI-KEI IEONG.IEEE transactions on computer-aided design of integrated circuits and systems. 1995, Vol 14, Num 11, pp 1309-1315, issn 0278-0070Article

Monte-Carlo simulation of noise in GaAs at electric fields up to the critical fieldADAMS, J. G; TING-WEI TANG.IEEE electron device letters. 1992, Vol 13, Num 7, pp 378-380, issn 0741-3106Article

Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte-Carlo calculationsSHIN-CHI LEE; TING-WEI TANG.Solid-state electronics. 1992, Vol 35, Num 4, pp 561-569, issn 0038-1101Article

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET'sYU-ZHANG CHEN; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2180-2188, issn 0018-9383Article

Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices. II: Numerical solutionsSCROBOHACI, P. G; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 7, pp 1206-1212, issn 0018-9383Article

An improved hydrodynamic transport model for siliconTING-WEI TANG; SRIDHAR RAMASWAMY; JOONWOO NAM et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 8, pp 1469-1477, issn 0018-9383Article

PROPAGATION AND MODE CONVERSION OF LOWER HYBRID WAVES IN INHOMOGENEOUS MAGNETIC FIELDSTING WEI TANG; FU KY; FARSHORI MW et al.1979; PLASMA PHYS.; GBR; DA. 1979; VOL. 21; NO 2; PP. 127-138; BIBL. 11 REF.Article

Monte Carlo simulation of the GaAs permeable base transistorCHANG-GYU HWANG; NAVON, D. H; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 154-159, issn 0018-9383Article

Monte Carlo simulation of noise in GaAs semiconductor devicesADAMS, J. G; TING-WEI TANG; KAY, L. E et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 575-581, issn 0018-9383Article

Boundary conditions in regional Monte Carlo device analysisNGUYEN, P. T; NAVON, D. H; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 4, pp 783-787, issn 0018-9383Article

Analytical model for predicting threshold voltage in submicrometer-channel MOSFET'sTING-WEI TANG; QIAN-LING ZHANG; NAVON, D. H et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 9, pp 1890-1893, issn 0018-9383Article

Numerical analysis of GaAs epitaxial-layer Schottky diodesADAMS, J. G; JELENSKI, A; NAVON, D. H et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 9, pp 1963-1970, issn 0018-9383Article

Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoffKYUWOON HWANG; NAVON, D. H; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1067-1072, issn 0018-9383Article

Second breakdown prediction by two-dimensonal numerical analysis of BJT turnoffKYUWOON HWANG; NAVON, D. H; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 7, pp 1067-1072, issn 0018-9383Article

Numerical simulation and comparison of Si BJT's and Si_1-xGe_x HBT'sPEJCINOVIC, B; KAY, L. E; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2129-2137, issn 0018-9383, 9 p., 1Article

A comparison of numerical solutions of the Boltzmann transport equation for high-energy electron transport siliconABRAMO, A; BAUDRY, L; FIEGNA, C et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 9, pp 1646-1654, issn 0018-9383Article