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PROPERTIES INVESTIGATION OF THIN SILICON NITRIDE LAYERS SYNTHESIZED BY ION IMPLANTATIONKOMAROV FF; ROGALEVICH IA; TISHKOV VS et al.1978; RAD. EFFECTS; GBR; DA. 1978; VOL. 39; NO 3-4; PP. 163-167; BIBL. 15 REF.Article

FORMATION OF CHEMICAL COMPOUNDS BY ION BOMBARDMENT OF THIN TRANSITION METAL FILMS.BELII IM; KOMAROV FF; TISHKOV VS et al.1978; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1978; VOL. 45; NO 1; PP. 343-352; ABS. RUSSE; BIBL. 23 REF.Article

FORMATION DE COMPOSES CHIMIQUES LORS DU BOMBARDEMENT IONIQUE DE COUCHES MINCES DE METAUX DE TRANSITION TA, TI, NBBELYJ IM; KOMAROV FF; TISHKOV VS et al.1978; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1978; NO 3; PP. 110-116; H.T. 1; BIBL. 20 REF.Article

FORMATION DE COMPOSES CHIMIQUES LORS DU BOMBARDEMENT IONIQUE DE COUCHES MINCES DE METAUX DE TRANSITION CR, NI, MOBELYJ IM; KOMAROV FF; TISHKOV VS et al.1979; FIZ. KHIM. OBRABOT. MATER.; SUN; DA. 1979; NO 1; PP. 48-53; H.T. 2; BIBL. 7 REF.Article

THERMAL RECRYSTALLIZATION OF SILICON AMORPHOUS LAYERS AFTER ARGON, OXYGEN AND NITROGEN ION IMPLANTATIONKOMAROV FF; SOLOV'YEV VS; TISHKOV VS et al.1983; RADIATION EFFECTS; ISSN 0033-7579; GBR; DA. 1983; VOL. 69; NO 3-4; PP. 179-189; BIBL. 18 REF.Article

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