au.\*:("TISNEK, T. V")
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Système photographique pour l'enregistrement du rayonnement de 10,6 μmGORLIN, G. B; PARITSKIJ, L. G; TISNEK, T. V et al.Žurnal tehničeskoj fiziki. 1987, Vol 57, Num 1, pp 159-161, issn 0044-4642Article
Low-temperature magnetoresistance due to weak localization in lightly doped semiconductorsVEINGER, A. I; ZABRODSKII, A. G; TISNEK, T. V et al.Solid state communications. 2005, Vol 133, Num 7, pp 455-458, issn 0038-1098, 4 p.Article
Peculiarities of the quantum magnetoresistance effects in a heavily doped semiconductor at the microwave frequenciesVEINGER, A. I; ZABRODSKII, A. G; TISNEK, T. V et al.Solid state communications. 1998, Vol 106, Num 7, pp 401-404, issn 0038-1098Article
Formation of an antiferromagnetic phase in highly doped 4H-SiCTISNEK, T. V; VEINGER, A. I; ZABRODSKII, A. G et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 1131-1133, issn 0925-9635, 3 p.Conference Paper
Local superconductivity in nickel-containing glassesVEINGER, A. I; ZABRODSKII, A. G; TISNEK, T. V et al.Glass physics and chemistry. 1996, Vol 22, Num 6, pp 550-554, issn 1087-6596Article