SOME TEMPERATURE DEMPENDENCES IN AVALANCHING P-N JUNCTIONS.TJAPKIN D; PETKOVIC R.1976; UNIV. BEOGRADU, PUBL. ELEKTROTEH. FAK., ELEKTRON. TELEKOMUNIK. AUTOMAT.; JUGOSL.; DA. 1976; NO 109-113; PP. 47-57; BIBL. 14 REF.Article

ENERGY BAND CALCULATION AND ZERO ENERGY GAP CONDITIONS FOR SEMICONDUCTOR SUPERLATTICESMILANOVIC V; TJAPKIN D.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 110; NO 2; PP. 687-695; ABS. FRE; BIBL. 14 REF.Article

DETERMINATION OF THE POTENTIAL DISTRIBUTION IN SEMICONDUCTOR HETEROSTRUCTURES IN THE PRESENCE OF QUANTUM EFFECTSMILANOVIC V; TJAPKIN D.1982; PHYSICA B + C. B. PHYSICS OF CONDENSED MATTER. C. ATOMIC, MOLECULAR AND PLASMA PHYSICS. OPTICS; ISSN 511463; NLD; DA. 1982; VOL. 114; NO 3; PP. 375-378; BIBL. 8 REF.Article

ELECTRON GROUND STATE IN THE SEMICONDUCTOR INVERSION LAYER AND LOW FREQUENCY MIS CAPACITANCE.DJURIC Z; SPASOJEVIC Z; TJAPKIN D et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 931-934; BIBL. 16 REF.Article

THE CALCULATION OF THE CARRIER CONCENTRATION IN A SYMMETRICAL MISIM STRUCTURE INVERSION LAYERSPASOJEVIC Z; MILANOVIC V; TJAPKIN D et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 34; NO 6; PP. 489-492; BIBL. 14 REF.Article

SELF-CONSISTENT SCREENING LENGTH IN A HEAVILY-DOPED SEMICONDUCTORTOSIC T; JEVTIC M; TJAPKIN D et al.1979; UNIV. BEOGRADU, PUBL. ELEKTROTEH. FAK., MAT. FIZ.; YUG; DA. 1979; NO 634-677; PP. 148-155; BIBL. 12 REF.Article

Temperature dependence of the Fermi level in the two-zone hybrid model of doped semiconductorsRADJENOVIC, B; TJAPKIN, D.Semiconductor science and technology. 1990, Vol 5, Num 4, pp 299-304, issn 0268-1242, 6 p.Article

The influence of hybridization of the impurity and the conduction bands on the density of states of doped semiconductorsRADJENOVIC, B; TJAPKIN, D.Physica status solidi. B. Basic research. 1989, Vol 156, Num 2, pp 487-495, issn 0370-1972Article

Self-consistent evaluation of nonuniform superlattice parameters by the harmonic methodMILANOVIC, V; TJAPKIN, D.Physica, B + C. 1983, Vol 121, Num 1-2, pp 187-192, issn 0378-4363Article

Electronic structure and electron distribution in an inverse superatom calculated by a self-consistent methodMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.Microelectronics. 1990, Vol 21, Num 3, pp 25-30, issn 0026-2692Article

On the linewidths of intersubband transitions in GaAs-Al_xGa_1-xAs quantum wells in electric fieldIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Solid state communications. 1989, Vol 72, Num 9, pp 835-838, issn 0038-1098Article

On the inter-band free-free transitions in a semiconductor quantum well structureMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.Semiconductor science and technology. 1988, Vol 3, Num 3, pp 213-217, issn 0268-1242Article

Semiempirical determination of avalanche breakdown temperature parameters in p-n junctionsTJAPKIN, D; RAMOVIC, R; STOJANOVIC, D et al.Solid-state electronics. 1984, Vol 27, Num 5, pp 407-411, issn 0038-1101Article

Quantum approach to GaAs MESFETsSALIC, R; RAMOVIC, R; TJAPKIN, D et al.International conference on microelectronic. 1997, pp 365-368, isbn 0-7803-3664-X, 2VolConference Paper

Bound-free intraband absorption in GaAs-Al_xGa_1-xAs semiconductor quantum wellsIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Applied physics letters. 1989, Vol 54, Num 3, pp 247-249, issn 0003-6951, 3 p.Article

Resonant second harmonic generation by a semiconductor quantum well in elecric fieldIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.IEEE journal of quantum electronics. 1989, Vol 25, Num 1, pp 54-60, issn 0018-9197, 7 p.Article

On the design of tunable quantum well infrared photodetectorsIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Solid-state electronics. 1988, Vol 31, Num 9, pp 1447-1449, issn 0038-1101Article

On the optimisation of bound electron concentration in a semiconductor quantum wellMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.Semiconductor science and technology. 1988, Vol 3, Num 7, pp 675-679, issn 0268-1242Article

Optical transitions between higher levels in a quantum well in an electric fieldIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 19, pp L425-L428, issn 0022-3719Article

On equispaced levels Hamiltonians with the variable effective mass following the potentialMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.International conference on microelectronic. 1997, pp 157-160, isbn 0-7803-3664-X, 2VolConference Paper

Valence subband structure of [100]-, [110]-, and [111]-grown GaAs-(Al,Ga)As quantum wells and the accuracy of the axial approximationIKONIC, Z; MILANOVIC, V; TJAPKIN, D et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 7, pp 4285-4288, issn 0163-1829Article

Levinson's theorem in semiconductor quantum dotsMILANOVIC, V; IKONIC, Z; TJAPKIN, D et al.Journal of physics. A, mathematical and general. 1992, Vol 25, Num 23, pp L1305-L1309, issn 0305-4470Article

Analysis of the infrared plasma reflectivity minimum by a self-consistent methodJEVTIC, M. M; TOSIC, D. I; TJAPKIN, D. A et al.Acta paediatrica scandinavica. 1985, Vol 25, Num 4, pp 619-624, issn 0001-656XArticle

Mobility of holes in p-type silicon determined by the self-consistent methodTJAPKIN, D. A; TOSIC, T. I; JEVTIC, M. M et al.Solid-state electronics. 1984, Vol 27, Num 7, pp 667-673, issn 0038-1101Article