DEFIBRINIERUNGS-SYNDROM BEI MAGENTUMOREN = SYNDROME DE DEFIBRINATION DANS LES TUMEURS GASTRIQUESMISZ M; SZABO A; BATONYI E et al.1975; MUENCH. MED. WSCHR.; DTSCH.; DA. 1975; VOL. 117; NO 8; PP. 287-290; ABS. ANGL.; BIBL. 13REF.Article

Cesium coverage on molybdenum due to cesium ion bombardmentTOMPA, G. S; CARR, W. E; SEIDL, M et al.Applied physics letters. 1986, Vol 48, Num 16, pp 1048-1050, issn 0003-6951Article

Composite surface layer formation produced by low energy Cs⁺ bombardment on: Be, Mo, & W = Formation de couche superficielle composite par bombardement de Cs⁺ de faible énergie sur: Be, Mo, et WTOMPA, G. S; SEIDL, M; CARR, W. E et al.Diffusion and defect data. 1988, Vol 57-58, pp 263-271, issn 0377-6883Article

Compact efficient modular cesium atomic beam ovenTOMPA, G. S; LOPES, J. L; WOHLRAB, G et al.Review of scientific instruments. 1987, Vol 58, Num 8, pp 1536-1537, issn 0034-6748Article

A new flame process for producing nanopowdersTOMPA, G. S; SKANDAN, G; GLUMAC, N et al.American Ceramic Society bulletin. 1999, Vol 78, Num 10, pp 70-75, issn 0002-7812Article

Metalorganic chemical vapor deposition growth of ZnTe on GaAsTOMPA, G. S; SUMMERS, C. J.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 4, pp 903-906, issn 0734-2101, 1Conference Paper

Mg₂Si buffer layers on Si(100) prepared by a simple evaporation methodTOMPA, G. S; LI, Y. B; AGASSI, D et al.Journal of electronic materials. 1996, Vol 25, Num 6, pp 925-929, issn 0361-5235Article

Optimization of fermentation conditions for the expression of sweet-tasting protein brazzein in Lactococcus lactisBERLEC, A; TOMPA, G; SLAPAR, N et al.Letters in applied microbiology. 2008, Vol 46, Num 2, pp 227-231, issn 0266-8254, 5 p.Article

A high-speed, rotating-disc metalorganic chemical vapor deposition system for the growth of (Hg,Cd)Te and related alloysANDERSON, P. L; ERBIL, A; NELSON, C. R et al.Journal of crystal growth. 1994, Vol 135, Num 3-4, pp 383-400, issn 0022-0248Article

Characterization of Bragg reflector structures using scanning reflectance spectral mappingBULITKA, N. J; MOORE, C. J. L; HENNESSY, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 28, Num 1-3, pp 457-460, issn 0921-5107Conference Paper

Elemental vapor transport epitaxy of GaAs, without oval defectsTOMPA, G. S; GURARY, A; NELSON, C. R et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 975-977, issn 0734-211XConference Paper

Vapor transport epitaxy, a novel growth technique for compound semiconductorsGURARY, A; TOMPA, G. S; NELSON, C. R et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1992, Vol 10, Num 4, pp 1453-1457, issn 0734-2101, 2Conference Paper

In-situ plasma cleaning of stainless steel III-V MOCVD growth systems : 33rd Electronic materials conference, Boulder, CO, June 19-21, 1991LI, S; TOMPA, G. S; MOY, K et al.Journal of electronic materials. 1992, Vol 21, Num 2, pp 149-156, issn 0361-5235Conference Paper

Large area, production MOCVD rotating disk reactor development and characteristicsTOMPA, G. S; BREILAND, W. G; GURARY, A et al.Microelectronics journal. 1994, Vol 25, Num 8, pp 757-765, issn 0959-8324Article

Lactobacillus gasseri K7 modulates the blood cell transcriptome of conventional mice infected with Escherichia coli O157:H7SAGAYA, F. M; HACIN, B; TOMPA, G et al.Journal of applied microbiology (Print). 2014, Vol 116, Num 5, pp 1282-1296, issn 1364-5072, 15 p.Article

Growth of highly uniform, reproducible InGaAs films in a multiwafer rotating disk reactor by MOCVDMCKEE, M. A; NORRIS, P. E; STALL, R. A et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 445-451, issn 0022-0248Conference Paper

MOVPE growth of II-VI compounds in a vertical reactor with high-speed horizontal rotating diskTOMPA, G. S; SALAGAJ, T; COOK, L et al.Journal of crystal growth. 1990, Vol 107, Num 1-4, pp 198-202, issn 0022-0248Conference Paper

Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high-speed, rotating disk reactorTOMPA, G. S; NELSON, C. R; SARACINO, M. A et al.Applied physics letters. 1989, Vol 55, Num 1, pp 62-64, issn 0003-6951, 3 p.Article

Metal organic chemical vapor deposition and investigation of ZnO thin films grown on sapphireSUN, S; TOMPA, G. S; RICE, C et al.Thin solid films. 2008, Vol 516, Num 16, pp 5571-5576, issn 0040-6090, 6 p.Conference Paper

Elemental vapor transport epitaxy of II-VI semiconductorsGURARY, A; TOMPA, G. S; LIANG, S et al.Journal of electronic materials. 1993, Vol 22, Num 5, pp 457-461, issn 0361-5235Conference Paper

Metalorganic chemical vapor deposition of superconducting YBa₂Cu₃O_7-x in a high-speed rotating disk reactorNOH, D. W; GALLOIS, B; CHERN, C. S et al.Journal of applied physics. 1989, Vol 66, Num 10, pp 5099-5101, issn 0021-8979Article

Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactorTOMPA, G. S; ZAWADZKI, P. A; BULITKA, N et al.Journal of crystal growth. 1994, Vol 145, Num 1-4, pp 655-661, issn 0022-0248Conference Paper