AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applicationsTONISCH, K; JATAL, W; NIEBELSCHUETZ, F et al.Thin solid films. 2011, Vol 520, Num 1, pp 491-496, issn 0040-6090, 6 p.Article

Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBEGUTT, R; LORENZ, P; TONISCH, K et al.Physica status solidi. Rapid research letters (Print). 2008, Vol 2, Num 5, pp 212-214, issn 1862-6254, 3 p.Article

Nanowire-based electromechanical biomimetic sensorTONISCH, K; CIMALLA, V; WILL, F et al.Physica. E, low-dimentional systems and nanostructures. 2007, Vol 37, Num 1-2, pp 208-211, issn 1386-9477, 4 p.Conference Paper

Optical properties of InN grown on Si(111) substrateSAKALAUSKAS, E; SCHLEY, P; VILALTA-CLEMENTE, A et al.Physica status solidi. A, Applications and materials science (Print). 2010, Vol 207, Num 5, pp 1066-1069, issn 1862-6300, 4 p.Conference Paper

Fabrication of one-dimensional trenched GaN nanowires and their interconnectionsLEBEDEV, V; CENGHER, D; FISCHER, M et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 10, pp 3387-3391, issn 1862-6300, 5 p.Article

Strain-and pressure-dependent RF response of microelectromechanical resonators for sensing applicationsBRUECKNER, K; CIMALLA, V; NIEBELSCHUTZ, F et al.Journal of micromechanics and microengineering (Print). 2007, Vol 17, Num 10, pp 2016-2023, issn 0960-1317, 8 p.Article