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Hydrogen content of amorphous silicon films deposited in a multipole plasmaDEVRILLON, B; TOULEMONDE, M.Journal of applied physics. 1985, Vol 58, Num 1, pp 535-540, issn 0021-8979Article

ETUDE DE TRANSITIONS GAMMA DANS LE NOYAU ³⁵SFREEMAN RM; FAERBER R; TOULEMONDE M et al.1972; NUCL. PHYS., A; NETHERL.; DA. 1972; VOL. 197; NO 2; PP. 529-539; ABS. ANGL.; BIBL. 22 REF.Serial Issue

Comparison of the radii of latent tracks induced by high-energy heavy ions in Y₃Fe₅O₁₂ by HREM, channelling Rutherford backscattering and Mössbauer spectrometryTOULEMONDE, M; STUDER, F.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1988, Vol 58, Num 5, pp 799-808, issn 0141-8610Article

Transient thermal process after a high-energy heavy-ion irradiation of amorphous metals and semiconductorsTOULEMONDE, M; DUFOUR, C; PAUMIER, E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 22, pp 14362-14369, issn 0163-1829Article

Anthropologie des dynamiques inter-culturelles et de développement dans la région frontalière du Bas Maroni, Guyane françaiseNIAUSSAT TOULEMONDE, M; BELLONCLE, G.1993, 276 p.Thesis

Latent tracks in magnetic insulatorsSTUDER, F; HOUPERT, C; GROULT, D et al.Radiation effects. 1989, Vol 110, Num 1-2, pp 55-59, issn 0033-7579Conference Paper

Relations between electronic stopping power and defects microstructures induced by swift heavy ions in spinel oxides and related compoundsHOUPERT, C; GROULT, D; STUDER, F et al.Radiation effects. 1989, Vol 110, Num 1-2, pp 189-191, issn 0033-7579Conference Paper

Tailoring of the properties of ferrites by latent track productionCOSTANTINI, J. M; STUDER, F; TOULEMONDE, M et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 1998, Vol 253, Num 1-2, pp 121-130, issn 0921-5093Conference Paper

Damage related deep electronic levels in silicon irradiated with 1.6 GeV Ar ionsKRYNICKI, J; TOULEMONDE, M; MULLER, J. C et al.Radiation effects. 1989, Vol 110, Num 1-2, pp 203-205, issn 0033-7579Conference Paper

Cascades de déplacements induites par des ions Ar de 1,8 GeV dans le composé Cu₃Au = Displacement cascades produced in Cu₃Au by 1,8 GeV Ar ion irradiationBARBU, A; MARTIN, G; TOULEMONDE, M et al.Comptes-rendus des séances de l'Académie des sciences. Série 2, Mécanique-physique, chimie, sciences de l'univers, sciences de la terre. 1984, Vol 299, Num 8, pp 409-414, issn 0750-7623Article

Influence of electronic stopping power on the damage rate of yttrium-iron garnets irradiated by high-energy heavy ionsFUCHS, G; STUDER, F; BALANZAT, E et al.Europhysics letters (Print). 1987, Vol 3, Num 3, pp 321-326, issn 0295-5075Article

Instability and structural transformation of amorphous ultra-thin W-Si multilayer structures during heavy ion irradiationMARFAING, J; MARINE, W; VIDAL, B et al.Applied surface science. 1990, Vol 46, Num 1-4, pp 422-426, issn 0169-4332, 5 p.Conference Paper

Irradiation of pure gallium by Xe ions (3.5 GeV) = Irradiation de gallium pur par des ions Xe (3,5 GeV)PAUMIER, E; BOGDANSKI, P; DURAL, J et al.Radiation effects. 1989, Vol 110, Num 1-2, pp 117-119, issn 0033-7579Conference Paper

Time-resolved reflectivity and melting depth measurements using pulsed ruby laser on siliconTOULEMONDE, M; UNAMUNO, S; HEDDACHE, R et al.Applied physics. A, Solids and surfaces. 1985, Vol 36, Num 1, pp 31-36, issn 0721-7250Article

Transport properties of hydrogenated and chlorinated amorphous silicon. Correlation with infrared transmission spectraAL DALLAL, S; KALEM, S; BOURNEIX, J et al.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1984, Vol 50, Num 4, pp 493-504, issn 0141-8637Article

Color-center creation in LiF under irradiation with swift heavy ions: Dependence on energy loss and fluenceSCHWARTZ, K; TRAUTMANN, C; EL-SAID, A. S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 18, pp 184104.1-184104.8, issn 1098-0121, 2Article

Amorphization of rare earth-cobalt intermetallic alloys by swift heavy-ion irradiationGHIDINI, M; NOZIERES, J. P; GIVORD, D et al.Journal of physics. Condensed matter (Print). 1996, Vol 8, Num 43, pp 8191-8206, issn 0953-8984Article

Structural and electrical damage induced by high-energy heavy ions in SiO₂/Si structuresBUSCH, M. C; SLAOUI, A; SIFFERT, P et al.Journal of applied physics. 1992, Vol 71, Num 6, pp 2596-2601, issn 0021-8979Article

X-ray study of Si crystals irradiated by fast uranium ionsAULEYTNER, J; BAK-MISIUK, J; FURMANIK, Z et al.Radiation effects and defects in solids. 1991, Vol 115, Num 4, pp 335-340, issn 1042-0150, 6 p.Article

Crystallization of ultrathin W-Si multilayer structures by high-energy heavy ion irradiationsMARFAING, J; MARINE, W; VIDAL, B et al.Applied physics letters. 1990, Vol 57, Num 17, pp 1739-1741, issn 0003-6951Article

Anomalous enhancement in defect production in gallium irradiated by high-energy xenon ionsPAUMIER, E; TOULEMONDE, M; DURAL, J et al.Europhysics letters (Print). 1989, Vol 10, Num 6, pp 555-561, issn 0295-5075, 7 p.Article

Modifications des propriétés supraconductrices et normales des nouveaux oxydes supraconducteurs YBa₂Cu₃O_7-δ et Bi₂Sr₂CaCu₂O₈ par bombardement ionique de forte énergie = Modifications of the superconducting and normal properties of the new high-Te superconductors YBa₂Cu₃O_7-δ and Bi₂Sr₂CaCu₂O₈ by high energy heavy ions bombardmentGROULT, D; PROVOST, J; RAVEAU, B et al.Revue de physique appliquée. 1989, Vol 24, Num 5, pp 507-512, issn 0035-1687Article

Neurolyse chimique à l'alcool (alcoolisation) et spasticité de l'hémiplégique = Chemical nucleolysis with alcohol in the treatment of spasticity of the hemiplegic patientENHALBERT, M; VIEL, E; TOULEMONDE, M et al.Annales de réadaptation et de médecine physique. 1993, Vol 36, Num 5, pp 337-342, issn 0168-6054Conference Paper

Heavy ions irradiation effects in high Tc superconductors : Mossbauer study of Fe-doped 1.2.3 phases YBa₂Cu_3-xFe_xO_7-δ irradiated by 3.5 GeV-XENON IONSBOURGAULT, D; NGUYEN, N; GROULT, D et al.Radiation effects and defects in solids. 1990, Vol 114, Num 4, pp 315-326, issn 1042-0150, 12 p.Article