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A High-Yield HfOx-Based Unipolar Resistive RAM Employing Ni Electrode Compatible With Si-Diode Selector for Crossbar IntegrationTRAN, X. A; YU, H. Y; NGUYEN, B. Y et al.IEEE electron device letters. 2011, Vol 32, Num 3, pp 396-398, issn 0741-3106, 3 p.Article

A Self-Rectifying HfOx-Based Unipolar RRAM With NiSi ElectrodeTRAN, X. A; ZHU, W. G; YU, H. Y et al.IEEE electron device letters. 2012, Vol 33, Num 4, pp 585-587, issn 0741-3106, 3 p.Article

Self-Selection Unipolar HfOx-Based RRAMTRAN, X. A; ZHU, W; LIU, W. J et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 1, pp 391-395, issn 0018-9383, 5 p.Article

Positive Bias-Induced Vth Instability in Graphene Field Effect TransistorsLIU, W. J; SUN, X. W; ZHU, H. L et al.IEEE electron device letters. 2012, Vol 33, Num 3, pp 339-341, issn 0741-3106, 3 p.Article

Ni Electrode Unipolar Resistive RAM Performance Enhancement by AlOy Incorporation Into HfOx Switching DielectricsTRAN, X. A; YU, H. Y; GAO, B et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1290-1292, issn 0741-3106, 3 p.Article

A Self-Rectifying AlOy Bipolar RRAM With Sub-50-μA Set/Reset Current for Cross-Bar ArchitectureTRAN, X. A; ZHU, W; LIU, W. J et al.IEEE electron device letters. 2012, Vol 33, Num 10, pp 1402-1404, issn 0741-3106, 3 p.Article

Highly Uniform, Self-Compliance, and Forming-Free ALD HfO2-Based RRAM With Ge DopingZHONGRUI WANG; ZHU, W. G; DU, A. Y et al.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 4, pp 1203-1208, issn 0018-9383, 6 p.Article

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