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EQUIVALENT CIRCUIT OF GUNN DEVICES OPERATING IN THE MONOSTABLE SWITCHING MODECLAASSEN M; REINECKER E.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 280-284; BIBL. 23 REF.Article

GALLIUM ARSENIDE TRANSFERRED-ELECTRON DEVICES BY LOW-LEVEL ION IMPLANTATIONANDERSON WT JR; DIETRICH HB; SWIGGARD EW et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 6; PP. 3175-3177; BIBL. 10 REF.Article

COMMUTATEURS BI-STABLES A EFFET GUNNBRCHE MA; KOZLOV AT; KRAVCHENKO LN et al.1980; RADIOTEKH. I ELEKTRON.; SUN; DA. 1980; VOL. 25; NO 4; PP. 836-842; BIBL. 18 REF.Article

TRANSFERRED-ELECTRON OSCILLATION IN N-IN0.53 GA0.47 ASTAKEDA Y; SHIKAGAWA N; SASAKI A et al.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 9; PP. 1003-1005; BIBL. 12 REF.Article

ERFAHRUNGEN MIT EINEM EINDIMENSIONALEN, SIMULTANEN IMPLIZIERTEN HALBLEITER-ANALYSEALGORITHMUS ZUR UNTERSUCHUNG VON GUNN-BAUELEMENTEN = L'ETUDE DE COMPOSANTS DE GUNN AU MOYEN D'UN ALGORITHME D'ANALYSE UNIDIMENSIONNEL, SIMULTANE ET IMPLICITE POUR SEMI-CONDUCTEURSCHUEFFNY R; GOETZE R.1979; NACHR.-TECH., ELEKTRON.; DDR; DA. 1979; VOL. 29; NO 3; PP. 100-106; BIBL. 24 REF.Article

SWITCHING IN MINIATURIZED PLANAR GUNN DEVICES.SCHLACHETZKI A.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 1; PP. 103-111; ABS. ALLEM.; BIBL. 24 REF.Article

OVERLENGTH-MODE TRANSFERRED-ELECTRON HARMONIC GENERATORSMAZZONE AM; REES HD.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 25; PP. 813-814; BIBL. 5 REF.Article

OPTIMUM DESIGN OF N+-N-N+ INP DEVICES IN THE MILLIMETER-RANGE FREQUENCY LIMITATION-RF PERFORMANCESFRISCOURT MR; ROLLAND PA.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 5; PP. 135-137; BIBL. 8 REF.Article

ETUDE THEORIQUE DES GENERATEURS A DIODES A TRANSFERT ELECTRONIQUE INTER-VALLEESPORESH SB; TAGER AS.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 4; PP. 834-840; BIBL. 13 REF.Article

PLANAR GUNN DEVICES WITH CATHODE TIP.KURUMADA K; MAUSE K.1976; NACHR.-TECH. Z.; DTSCH.; DA. 1976; VOL. 29; NO 7; PP. 547-548; ABS. ALLEM.; BIBL. 7 REF.Article

SCHOTTKY-CONTACT COUPLING BETWEEN SCHOTTKY-ELECTRODE-TRIGGERED GUNN ELEMENTSHASHIZUME N; KATAOKA S.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 7; PP. 1019-1026; BIBL. 9 REF.Article

ELECTRICAL CHARACTERIZATION OF TRANSFERRED ELECTRON DEVICES BY A NOVEL GALVANOMAGNETIC TECHNIQUEMCBRETNEY J; HOWES MJ.1979; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1979; VOL. 27; NO 3; PP. 256-265; BIBL. 17 REF.Article

DESIGN OF TRANSFERRED-ELECTRON AMPLIFIERS WITH GOOD FREQUENCY STABILITY.BERRY C; HOBSON GS; HOWARD MJ et al.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 3; PP. 270-274; BIBL. 10 REF.Article

INJECTION CONTROL IN TED'S BY METAL-N+(THIN)-N CATHODE STRUCTURE.KRISHNAN CN; SHARAN R.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 10; PP. 1264-1266; BIBL. 11 REF.Article

PHOTOETCHING OF INP MESAS FOR PRODUCTION OF MM-WAVE TRANSFERRED-ELECTRON OSCILLATORS.LUBZENS D.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 7; PP. 171-172; BIBL. 6 REF.Article

ELECTRIC-FIELD CONTROL IN PLANAR GUNN-EFFECT DEVICE WITH SCHOTTKY-BARRIER ANODE.BOSCH BG; WADA O; YANAGISAWA S et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 603-604; BIBL. 7 REF.Article

TIME DEPENDENT POTENTIAL IN PLANAR GUNN-EFFECT DEVICE.WADA O; YANAGISAWA S; TAKANASHI H et al.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; NO 6; PP. 1151-1152; BIBL. 9 REF.Article

OPERATING MODES OF MILLIMETRE WAVE TRANSFERRED ELECTRON OSCILLATORSEDDISON IG; BROOKBANKS DM.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 3; PP. 112-113; BIBL. 5 REF.Article

UNTERSUCHUNGEN ZUR DRIFTGESCHWINDIGKEITS-FELDSTAERKE-CHARAKTERISTIK VON GAAS-GUNN -ELEMENTEN = ETUDES DES CARACTERISTIQUES VITESSE DE DERIVE-INTENSITE DU CHAMP DE DISPOSITIFS GUNN AU GAASKLIEFOTH K; PETZEL B.1979; EXPER. TECH. PHYS.; DDR; DA. 1979; VOL. 27; NO 1; PP. 57-63; ABS. ENG; BIBL. 18 REF.Article

LARGE-SIGNAL COMPUTER SIMULATIONS OF THE CONTACT, CIRCUIT, AND BIAS DEPENDENCE OF X-BAND TRANSFERRED ELECTRON OSCILLATORSGRUBIN HL.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 5; PP. 511-519; BIBL. 19 REF.Article

OHMIC CONTACTS TO GAAS TRANSFERRED ELECTRON DEVICES.JOHNSON BP; HUANG CI.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 3; PP. 473-475; BIBL. 10 REF.Article

GAAS PLANAR GUNN DEVICES WITH SULFUR-ION IMPLANTED N LAYERS.MIZUTANI T; HONDA T; YAMAZAKI H et al.1977; SOLID-STATE ELECTRON; G.B.; DA. 1977; VOL. 20; NO 5; PP. 443-445; H.T. 1; BIBL. 14 REF.Article

CONDITION FOR NO CHARGE ACCUMULATION ON A METAL OF A SCHOTTKY-SCHOTTKY CONNECTION IN A SYSTEM OF GUNN DEVICES.HASHIZUME N; KODATO S.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 12; PP. 1351-1353; BIBL. 3 REF.Article

TRIGGER SENSITIVITY OF TRANSFERRED ELECTRON LOGIC DEVICES.DHYAYULA LC.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 9; PP. 1049-1052; BIBL. 7 REF.Article

WAVEGUIDE/RESONANT-DISC CIRCUITS FOR MILLIMETRE-WAVE DEVICESHAYDL WH; BOSCH R; RUEDIGER J et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 7; PP. 307-308; BIBL. 3 REF.Article

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