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LES TRANSISTORS DE PUISSANCE: POUR LES APPLICATIONS A LA COMMUTATIONDE MONTAIGNE J.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 267; PP. 15-21Article

HIGH-VOLTAGE POWER SWITCHING TRANSISTORSJARL R; VERBIEST N.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 8; PP. 33-37Article

TECHNOLOGIES ET APPLICATIONS DES TRANSISTORS DE PUISSANCE.1978; TOUTE ELECTRON.; FRA; DA. 1978; NO 431; PP. 27-36; BIBL. 3 REF.Article

OPTIMIZATION OF NONPLANAR POWER MOS TRANSISTORSLISIAK KP; BERGER J.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 10; PP. 1229-1234; BIBL. 13 REF.Article

SOLID STATE DEVICES TRANSISTORS AND OTHER DEVICES1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 657-687; BIBL. DISSEM.Conference Paper

NEUE TECHNIKEN BEI HABBLEITERN FUER DIE NACHRICHTENTECHNIK = NOUVELLES TECHNIQUES DANS LE CAS DES SEMICONDUCTEURS POUR LA TECHNIQUE DES TELECOMMUNICATIONSPLATH D.1978; NACHR. ELEKTRON.; DEU; DA. 1978; VOL. 32; NO 10; PP. 326-328; ABS. ENGArticle

COMPARISON OF VARIOUS SOURCE GATE GEOMETRIES FOR POWER MOSFET'SHOWER PL; GEISLER MJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1098-1101; BIBL. 1 REF.Article

LSI AND RELATED DEVICES. I.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 231-251; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

COLLECTOR JUNCTION MODELING OF PLANAR TRANSISTORS.BHATTACHARYYA AB; SUBODH JINDAL; BASAVARAJ TN et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 977-984; BIBL. 17 REF.Article

STATUS OF POWER TRANSISTORS. BIPOLAR AND FIELD EFFECT.PITZALIS O JR.1977; MICROWAVE J.; U.S.A.; DA. 1977; VOL. 20; NO 2; PP. 30-61 (4P.); BIBL. 11 REF.Article

ON-RESISTANCE OF V-V.M.O.S. POWER TRANSISTORSLANE WA; SALAMA CAT; DMITREVSKY S et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 19; PP. 601-602; BIBL. 3 REF.Article

100 W A 1 GHZ AVEC LE PREMIER "SIT" HYPERFREQUENCE DU MARCHEDELLA MUSSIA JP.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 275; PP. 36-37Article

ON THE MEASUREMENT OF SERIES BASE EMITTER AND COLLECTOR RESISTANCES FO MICROWAVE BIPOLAR POWER TRANSISTORS.PISANI U.1978; ALTA FREQ.; ITAL.; DA. 1978; VOL. 47; NO 1; PP. 40-44; BIBL. 9 REF.Article

INFLUENCE OF EMITTER EDGE DISLOCATIONS ON RELIABILITY OF PLANAR NPN TRANSISTORSSTOJADINOVIC ND.1982; MICROELECTRONICS AND RELIABILITY; ISSN 0026-2714; GBR; DA. 1982; VOL. 22; NO 6; PP. 1113-1120; BIBL. 14 REF.Article

LA COMMANDE DE BASE DES TRANSISTORS HAUTE TENSIONRISCHMUELLER K.1979; ELECTRONIQUE; CHE; DA. 1979; NO 4; PP. EL1-EL8Article

LES TRANSISTORS DE PUISSANCE EN COMMUTATION: OPTIMISATION DE LA COMMANDE DE BASEMOURIER G.1979; TOUTE ELECTRON.; FRA; DA. 1979; NO 442; PP. 65-67Article

A METALLIZATION SYSTEM FOR MICROWAVE AND UHF POWER TRANSISTORS.DANLEY LW.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 6; PP. 35-39; BIBL. 5 REF.Article

GENERATEURS D'IMPULSIONS RECTANGULAIRES DE LA NANOSECONDE A TRANSISTORS METAL-DIELECTRIQUE - SEMICONDUCTEUR A AVALANCHE ET DE PUISSANCED'YAKONOV VP.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 101-102; BIBL. 3 REF.Article

IL MERCATO DEI MOSFET DI POTENZA = LE MARCHE DES TRANSISTORS MOS DE PUISSANCEDANCE B.1980; ANTENNA; ITA; DA. 1980; VOL. 52; NO 11; PP. 420-426; 6 P.; BIBL. 8 REF.Article

HIGH-CURRENT V.M.O.S. SWITCHING1978; NEW ELECTRON.; GBR; DA. 1978; VOL. 11; NO 22; PP. 26-28; (2 P.)Article

SOLID STATE DEVICES. POWER TRANSISTORS1979; IEDM 1979. INTERNATIONAL ELECTRON DEVICES MEETING/1979/WASHINGTON DC; USA; NEW YORK: IEEE; DA. 1979; PP. 71-101; BIBL. DISSEM.Conference Paper

GAAS FET'S.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 143-157; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

REALISATION D'UN TRANSISTOR A CANAL VMOS OU DMOS DE PUISSANCE A GRILLE METALLIQUE COMPATIBLE AVEC C.I. BIPOLAIREDESCAMPS B.1979; ; FRA; DA. 1979; DGRST-77 7 0986; 55 F.: ILL.; 30 CM; BIBL. 10 REF.; ACTION CONCERTEE: COMPOSANTS ET CIRCUITS MICROMINIATURISESReport

AN ANALYSIS OF BASE TRANSIT TIME OF DIFFUSED BASE TRANSISTORSKAUSHIK DK; CHATTOPADHYAYA SK.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 8; PP. 770-775; BIBL. 14 REF.Article

THE GATED-ACCESS MNOS MEMORY TRANSISTORWEGENER HAR.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 266-276; BIBL. 9 REF.Article

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