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HIGH-VOLTAGE POWER SWITCHING TRANSISTORSJARL R; VERBIEST N.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 8; PP. 33-37Article

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SOLID STATE DEVICES TRANSISTORS AND OTHER DEVICES1978; INTERNATIONAL ELECTRON DEVICES MEETING/1978-12-04/WASHINGTON DC; USA; NEW YORK: INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS; DA. 1978; 657-687; BIBL. DISSEM.Conference Paper

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LSI AND RELATED DEVICES. I.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 231-251; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

COLLECTOR JUNCTION MODELING OF PLANAR TRANSISTORS.BHATTACHARYYA AB; SUBODH JINDAL; BASAVARAJ TN et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 977-984; BIBL. 17 REF.Article

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ON THE MEASUREMENT OF SERIES BASE EMITTER AND COLLECTOR RESISTANCES FO MICROWAVE BIPOLAR POWER TRANSISTORS.PISANI U.1978; ALTA FREQ.; ITAL.; DA. 1978; VOL. 47; NO 1; PP. 40-44; BIBL. 9 REF.Article

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LES TRANSISTORS DE PUISSANCE EN COMMUTATION: OPTIMISATION DE LA COMMANDE DE BASEMOURIER G.1979; TOUTE ELECTRON.; FRA; DA. 1979; NO 442; PP. 65-67Article

A METALLIZATION SYSTEM FOR MICROWAVE AND UHF POWER TRANSISTORS.DANLEY LW.1975; SOLID STATE TECHNOL.; U.S.A.; DA. 1975; VOL. 18; NO 6; PP. 35-39; BIBL. 5 REF.Article

GENERATEURS D'IMPULSIONS RECTANGULAIRES DE LA NANOSECONDE A TRANSISTORS METAL-DIELECTRIQUE - SEMICONDUCTEUR A AVALANCHE ET DE PUISSANCED'YAKONOV VP.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 101-102; BIBL. 3 REF.Article

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SOLID STATE DEVICES. POWER TRANSISTORS1979; IEDM 1979. INTERNATIONAL ELECTRON DEVICES MEETING/1979/WASHINGTON DC; USA; NEW YORK: IEEE; DA. 1979; PP. 71-101; BIBL. DISSEM.Conference Paper

GAAS FET'S.1978; JAP. J. APPL. PHYS.; JAP.; DA. 1978; VOL. 17; SUPPL. 1; PP. 143-157; BIBL. DISSEM.; (CONF. SOLID STATE DEVICES. 9. PROC.; TOKYO; 1977)Conference Paper

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THE GATED-ACCESS MNOS MEMORY TRANSISTORWEGENER HAR.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 266-276; BIBL. 9 REF.Article