ALTERNATE SUBSTRATES TO ALUMINA FOR MICROELECTRONICS. IICOLEMAN M.1983; ELECTRI.ONICS; ISSN 512907; USA; DA. 1983; VOL. 29; NO 1; PP. 19-21; BIBL. 8 REF.Article

COMPARISON BETWEEN TWO-DIMENSIONAL SHORT-CHANNEL MOSFET MODELSUMESH KUMAR.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 37-46; BIBL. 85 REF.Article

A DESCRIPTION OF MOS INTERNODAL CAPACITANCES FOR TRANSIENT SIMULATIONSTAYLOR GW; FICHTNER W; SIMMONS JG et al.1982; IEEE TRANS. COMPUT.-AIDED DES. INTEGR. CIRCUITS SYST.; ISSN 50629X; USA; DA. 1982; VOL. 1; NO 4; PP. 150-156; BIBL. 9 REF.Article

OBSERVATION OF A POSSIBLE FRINGING FIELD EFFECT ON THE THRESHOLD VOLTAGE VARIATION OF THE SHORT-CHANNEL MOSFETHSIEN LIANG CHANG; YU SY.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 6037-6038; BIBL. 4 REF.Article

SIMPLE MODEL FOR THRESHOLD VOLTAGE OF A NONUNIFORMLY DOPED SHORT-CHANNEL MOS TRANSISTORASENOV AM.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 11; PP. 481-483; BIBL. 6 REF.Article

A NEW METHOD TO ELECTRICALLY DETERMINE EFFECTIVE MOSFET CHANNEL WIDTHYING REN MA; WANG KL.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1825-1827; BIBL. 9 REF.Article

UMOS TRANSISTORS (110) SILICONAMMAR ES; RODGERS TJ.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 5; PP. 907-914; BIBL. 16 REF.Article

A NEW METHOD TO DETERMINE EFFECTIVE MOSFET CHANNEL LENGTHTERADA K; MUTA H.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 5; PP. 953-959; BIBL. 10 REF.Article

A SIMPLIFIED MODEL OF SHORT-CHANNEL MOSFET: CARACTERISTICS IN THE BREAKDOWN MODEFU CHIEH HSU; MULLER RS; CHENMING HU et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 6; PP. 571-576; BIBL. 9 REF.Article

THREE-DIMENSIONAL SIMULATION OF INVERSE NARROW-CHANNEL EFFECTSHIGYO N; KONAKA M; DANG RLM et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 6; PP. 274-275; BIBL. 3 REF.Article

EFFET DE LA REDUCTION DE MOBILITE SUR L'AMPLIFICATION INTERNE DU BRUIT DE FOND DANS LE CANAL DES TRANSISTORS A EFFET DE CHAMPGRAFFEUIL J; ROSSEL P; BLASQUEZ G et al.1978; C.R. ACAD. SCI., B SCI. PHYS.; FRA; DA. 1978; VOL. 287; NO 15; PP. 309-312; ABS. ENG; BIBL. 6 REF.Article

AN ANALYSIS OF THE CONCAVE MOSFETNATORI K; SASAKI I; MASUOKA F et al.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 448-456; BIBL. 10 REF.Article

STACKED TRANSISTORS CMOS (ST-MOS), AN NMOS TECHNOLOGY MODIFIED TO CMOSCOLINGE JP; DEMOULIN E; LOBET M et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 4; PP. 585-589; BIBL. 20 REF.Article

THE APPEARANCE OF A NEGATIVE CONDUCTANCE AT THE SUBSTRATE OF A MOSFET EXHIBITING CHANNEL AVALANCHINGRUCKER LM; VAN DER ZIEL A.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 8; PP. 909-910; BIBL. 5 REF.Article

INTEGRIERTE THYRISTORANSTEUERSCHALTUNG U 706 D = CIRCUIT INTEGRE DE COMMANDE DE THYRISTORS U 706 DGRAICHEN G; NIKSCH D.1980; RADIO FERNSEHEN ELEKTRON.; DDR; DA. 1980; VOL. 29; NO 3; PP. 143-149; BIBL. 8 REF.Article

VERTICAL GEOMETRY IS BOOSTING FETS INTO POWER USES AT RADIO FREQUENCIES.LUDVIK S.1978; ELECTRONICS; USA; DA. 1978; VOL. 51; NO 5; PP. 105-108Article

DETERMINATION OF THE CHANNEL TEMPERATURE IN A GAAS MESFET FROM THE EMISSION TRANSIENTS OF DEEP TRAPSPINSARD JL; WALLIS RH; ZYLBERSZTEJN A et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 6; PP. 551-555; BIBL. 13 REF.Article

CONTRIBUTION A L'ETUDE ET A LA MISE AU POINT D'UNE TECHNOLOGIE POUR LE TRANSISTOR DMOS CANAL N SUR SILICIUM SUR CORINDONMONROY AGUIRRE AUGUSTIN.1980; ; FRA; DA. 1980; 198 P.; 30 CM; BIBL. 75 REF.; TH. DOCT.-ING./GRENOBLE I.N.P./1980Thesis

UNE METHODE SIMPLE DE DETERMINATION DE LA VITESSE LIMITE DES PORTEURS, DANS LES TRANSISTORS MOSMERCKEL G.1980; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1980; VOL. 15; NO 4; PP. 879-887; ABS. ENG; BIBL. 23 REF.Article

H-MOS RELIABILITYROSENBERG SJ; CROOK DL; EUZENT BL et al.1979; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1979; VOL. 26; NO 1; PP. 48-51; BIBL. 8 REF.Article

LASER ANNEALING OF M.O.S.-TRANSISTOR CHANNEL IMPLANTATIONSZIMMER G.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 6; PP. 184-186; BIBL. 7 REF.Article

SHUBNIKOV-DE HAAS OSCILLATIONS IN N-CHANNEL SILICON (100) MOSFETS IN MAGNETIC FIELDS UP TO 35TNICHOLAS RJ; STRADLING RA; PORTAL JC et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 31; NO 6; PP. 437-441; BIBL. 23 REF.Article

THE EFFECTS OF TWO-DIMENSIONAL CHARGE SHARING ON THE ABOVETHRESHOLD CHARACTERISTICS OF SHORT-CHANNEL IGFETSTAYLOR GW.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 8; PP. 701-717; BIBL. 13 REF.Article

GRADED CHANNEL FET'S: IMPROVED LINEARITY AND NOISE FIGUREWILLIAMS RE; SHAW DW.1978; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1978; VOL. 25; NO 6; PP. 600-605; BIBL. 9 REF.Article

GAAS F.E.T.S. WITH SILICON-IMPLANTED CHANNELS.KUNG JK; MALBON RM; LEE DH et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 7; PP. 187-188; BIBL. 3 REF.Article