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Results 1 to 25 of 141

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VERIFYING COLLECTOR VOLTAGE RATINGSROEHR B.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 2; PP. 36-40; (3 P.)Article

COLLECTOR JUNCTION MODELING OF PLANAR TRANSISTORS.BHATTACHARYYA AB; SUBODH JINDAL; BASAVARAJ TN et al.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 977-984; BIBL. 17 REF.Article

THE TEMPERATURE DEPENDENCE OF THE DC BASE AND COLLECTOR CURRENTS IN SILICON BIPOLAR TRANSISTORS.MARTINELLI RU.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 11; PP. 1218-1224; BIBL. 20 REF.Article

EMITTER-COLLECTOR BREAKDOWN VOLTAGE BVCEO VERSUS GAIN HFE FOR VARIOUS N-P-N COLLECTOR DOPING LEVELSROULSTON DJ; DEPEY M.1980; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1980; VOL. 16; NO 21; PP. 803-805; BIBL. 5 REF.Article

EFFECTS OF VARYING BASE AND COLLECTOR DOPING ON HIGH CURRENT BEHAVIOUR IN BIPOLAR EPITAXIAL TRANSISTORS.THOMAS RE; SAYEED KH.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 2; PP. 121-140; BIBL. 18 REF.Article

INVERSER BETRIEB VON BIPOLAREN TRANSISTOREN = FONCTIONNEMENT D'UN TRANSISTOR BIPOLAIRE LORS D'UNE INVERSION DES ROLES DE L'EMETTEUR ET DU COLLECTEURORTLER G.1981; FREQUENZ; ISSN 0016-1136; DEU; DA. 1981; VOL. 35; NO 8; PP. 211-215; ABS. ENG; BIBL. 2 REF.Article

ZUR ANBRINGUNG DER KOLLEKTOR-BASIS-KAPAZITAET IM T-ERSATZSCHALTBILD DES BIPOLAREN TRANSISTORSSTEIMLE W; MALZ R.1979; FREQUENZ; DEU; DA. 1979; VOL. 33; NO 2; PP. 34-36; ABS. ENG; BIBL. 4 REF.Article

OSCILLATIONS A COURTES PERIODES DE LA TENSION SUR LE COLLECTEUR DANS LE CAS DE FOCALISATION TRANSVERSALE DES ELECTRONS DANS LE BISMUTHTSOJ VS.1977; PIS'MA ZH. EKSPER. TEOR. FIZ.; S.S.S.R.; DA. 1977; VOL. 25; NO 6; PP. 289-292; BIBL. 5 REF.Article

Graded collector heterojunction bipolar transistorCHIU, L. C; HARDER, C; MARGALIT, S et al.Applied physics letters. 1984, Vol 44, Num 1, pp 105-106, issn 0003-6951Article

Recovery mechanism of lattice defects formed in the collector region for electron-irradiated npn Si transistorsOHYAMA, H; NEMOTO, K.Physica status solidi. A. Applied research. 1988, Vol 110, Num 2, pp 677-686, issn 0031-8965Article

ON THE MEASUREMENT OF SERIES BASE EMITTER AND COLLECTOR RESISTANCES FO MICROWAVE BIPOLAR POWER TRANSISTORS.PISANI U.1978; ALTA FREQ.; ITAL.; DA. 1978; VOL. 47; NO 1; PP. 40-44; BIBL. 9 REF.Article

COMPARISON OF VARIOUS SOURCE GATE GEOMETRIES FOR POWER MOSFET'SHOWER PL; GEISLER MJ.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 9; PP. 1098-1101; BIBL. 1 REF.Article

A SIMPLE MODEL FOR THE DETERMINATION OF 12L BASE CURRENT COMPONENTSMOELLMER F; MUELLER R.1978; I.E.E.E. J. SOLID-STATE CIRCUITS; USA; DA. 1978; VOL. 13; NO 6; PP. 899-905; BIBL. 12 REF.Article

A proposed structure for collector transit-time reduction in AlGaAs/GaAs bipolar transistorsMAZIAR, C. M; KLAUSMEIER-BROWN, M. E; LUNDSTROM, M. S et al.IEEE electron device letters. 1986, Vol EDL-7, Num 8, pp 483-485, issn 0741-3106Article

Comparison of p-channel lateral insulated-gate bipolar transistors with and without collector shortsCHOW, T. P; BALIGA, B. J; PATTANAYAK, D. N et al.IEEE electron device letters. 1990, Vol 11, Num 5, pp 184-186, issn 0741-3106, 3 p.Article

Double-interdigitated (TIL) bipolar power transistors with lightly doped collectorsSILARD, A; NANI, G; FLORU, F et al.IEEE electron device letters. 1988, Vol 9, Num 4, pp 174-176, issn 0741-3106Article

Improved digital/analogue conversion technique using current splitting in lateral bipolar transistorsSINGOR, H. W; SALAMA, C. A. T; SCOTT, I et al.Electronics Letters. 1988, Vol 24, Num 24, pp 1490-1491, issn 0013-5194Article

Base-collector junction capacitance of bipolar transistors operating at high current densitiesLIOU, J. J.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 11, pp 2304-2308, issn 0018-9383Article

Analytic techniques and corrections to the Tsu-Esaki tunneling currentBANDARA, K. M. S. V; COON, D. D.Superlattices and microstructures. 1988, Vol 4, Num 6, pp 697-700, issn 0749-6036Article

Control of avalanche injection in bipolar transistors through the use of graded collector impurity profilesHUMPHREYS, M. J; NUTTALL, K. I.IEE proceedings. Part I. Solid-state and electron devices. 1987, Vol 134, Num 5, pp 141-147, issn 0143-7100, 1Article

EMITTER CURRENT-CROWDING IN HIGH-VOLTAGE TRANSISTORSHOWER PL; EINTHOVEN WG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 465-471; BIBL. 17 REF.Article

TEMPERATURE-DEPENDENT INSTABILITIES OF THE ELECTRICAL PROPERTIES OF TRANSISTORS AND QUARTZ CRYSTAL OSCILLATORS IN TIN-PLATED PACKAGESMUCKE KH.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 9; PP. 80-84Article

Collector-emitter offset voltage in heterojunction bipolar transistorsMAZHARI, B; GAO, G. B; MORKOC, H et al.Solid-state electronics. 1991, Vol 34, Num 3, pp 315-321, issn 0038-1101, 7 p.Article

A collector design study of GaAs/Ge/GaAs double heterojunction bipolar transistorsSTRITE, S; ÜNLÜ, M. S; DEMIREL, A. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 2, pp 675-682, issn 0734-211XArticle

Excess white noise in bipolar junction transistorsLUKYANCHIKOVA, N. B; GARBAR, N. P; PETRICHUK, M. V et al.Solid-state electronics. 1992, Vol 35, Num 8, pp 1179-1184, issn 0038-1101Article

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