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FOCUS ON CMOSTORRERO EA.1973; ELECTRONIQUE; SUISSE; DA. 1973; VOL. 2; NO 1; PP. 78Serial Issue

VARIATION OF OUTPUT RESISTANCE OF A COMPLEMENTARY COMPOSITE TRANSISTORSWAMY KL; VENKATA REDDY K.1972; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; INDIA; DA. 1972; VOL. 53; NO 1; PP. 28-29; BIBL. 3 REF.Serial Issue

CIRCUITS GENERATEURS DE PUISSANCE: PRINCIPES DE BASE.N'GUYEN TAN TAI.1977; TOUTE ELECTRON.; FR.; DA. 1977; NO 421; PP. 57-62Article

ATTENUATEUR CONTROLABLE, A TRANSISTORS A EFFET DE CHAMP AVEC DES TYPES DE CONDUCTIVITE COMPLEMENTAIRESSIKOLENKO SF.1981; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1981; VOL. 24; NO 7; PP. 39-44; BIBL. 5 REF.Article

ETUDE DE L'AMPLIFICATEUR AF A TRANSISTORS COMPLEMENTAIRES: II-CLASSE B. II.HOUZE C.1975; REV. SON; FR.; DA. 1975; NO 269; PP. 72-75Article

DIE LAMBDADIODE. = LA DIODE LAMBDA1976; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1976; VOL. 25; NO 2; PP. 48.Article

INTRODUCTION AUX CIRCUITS MOS COMPLEMENTAIRES. IFRAMMERY B.1973; ELECTRONIQUE; SUISSE; DA. 1973; VOL. 2; NO 3; PP. 27-33Serial Issue

OUTPUT RESISTANCE OF A COMPLEMENTARY COMPOSITE TRANSISTORSWAMY KL; VENKATA REDDY K.1972; J. INSTIT. ENGRS (INDIA), ELECTRON. TELECOMMUNIC. ENGNG DIV.; INDIA; DA. 1972; VOL. 52; NO 5; PP. 232-233; BIBL. 3 REF.Serial Issue

A NEW COMPLEMENTARY BIPOLAR TRANSISTOR STRUCTURESU SC; MEINDL JD.1973; SOLID STATE TECHNOL.; U.S.A.; DA. 1973; VOL. 16; NO 4; PP. 53-58Serial Issue

IS CMOS THE END OF THE LINETHOMPSON SA.1973; ELECTRON. ENGR; U.S.A.; DA. 1973; VOL. 32; NO 1; PP. 35-42Serial Issue

ANALYSE, A L'AIDE D'UNE CALCULATRICE NUMERIQUE, DU FONCTIONNEMENT DES CIRCUITS A FONCTIONS COMPLEXES UTILISANT DES TRANSISTORS MOS COMPLEMENTAIRESBAJKOV V TS; BUGRIMENKO GA; KARMAZINSKIJ AN et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOLEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 3-10; BIBL. 6 REF.Article

VERS LES VITESSES DE LA TTL: LES C/MOS A ISOLEMENT DIELECTRIQUELILEN H.1972; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1972; NO 165; PP. 69-71Serial Issue

CRISTAUX LIQUIDESsdIN: SYST. AFFICHAGE. C.R. JOURN. ELECTRON. LAUSANNE, 1972; S.L.; DA. S.D.; PP. 1-126; H.T. 1; BIBL. DISSEM.Conference Paper

COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES.TAKAGI H; KANO G.1975; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1975; VOL. 10; NO 6; PP. 509-515; BIBL. 5 REF.Article

COMPLEMENTARY POWER FETS WITH VERTICAL STRUCTURES.SAKAI K; KOMATSU Y.1975; N.E.C. RES. DEVELOP.; JAP.; DA. 1975; NO 37-38; PP. 65-73; BIBL. 10 REF.Article

FETS AS ANALOG SWITCHESGIVENS S.1973; ELECTRON. COMPON.; G.B.; DA. 1973; VOL. 14; NO 2; PP. 70-77 (6 P.)Serial Issue

CHARACTERIZATION OF THIN-OXIDE MNOS MEMORY TRANSISTORSWHITE MH; CRICCHI JR.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 12; PP. 1280-1288; BIBL. 17 REF.Serial Issue

A NEW COMPLEMENTARY BIPOLAR TRANSISTOR STRUCTURESU SC; MEINDL JD.1972; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1972; VOL. 7; NO 5; PP. 351-357; BIBL. 7 REF.Serial Issue

A 1024-BYTE ECL RANDOM ACCESS MEMORY USING A COMPLEMENTARY TRANSISTOR SWITCH (CTS) CELLDORLER JA; MOSLEY JM; RITTER GA et al.1981; IBM J. RES. DEVELOP.; ISSN 0018-8646; USA; DA. 1981; VOL. 25; NO 2-3; PP. 126-134; BIBL. 7 REF.Article

A NEW LAMBDA -TYPE NEGATIVE RESISTANCE DEVICE OF INTEGRATED COMPLEMENTARY FET STRUCTURE.KANO G; IWASA H.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 7; PP. 448-449; BIBL. 4 REF.Article

THE IMPACT OF ION IMPLANTATION ON SILICON DEVICE AND CIRCUITS TECHNOLOGYDILL HG; FINNILA RM; LEUPP AM et al.1972; SOLID STATE TECHNOL.; U.S.A.; DA. 1972; VOL. 15; NO 12; PP. 27-35; BIBL. 26 REF.Serial Issue

CMOS: A NEW LOGIC TYPE FOR CONTROL SYSTEMSHALLIGAN J.1972; CONTROL ENGNG; U.S.A.; DA. 1972; VOL. 19; NO 6; PP. 68-71Serial Issue

HIGHER PACKING DENSITY AND LOWER POWER WITH COMPLEMENTARY M.O.SBISHOP RA.1972; ELECTRON. ENGNG; G.B.; DA. 1972; VOL. 44; NO 536; PP. 61-63Serial Issue

USING COMPLEMENTARY MOS CIRCUITS FOR CONTROL INSTRUMENTATIONKALIN WF.1972; INSTRUM. CONTROL SYST.; U.S.A.; DA. 1972; VOL. 45; NO 9; PP. 75-78; BIBL. 7 REF.Serial Issue

A NEW-TWO-TERMINAL C-MNOS MEMORY CELL.KOIKE S; KANO G; KASHIWAKURA A et al.1977; JAP. J. APPL. PHYS.; JAP.; DA. 1977; VOL. 16; SUPPL. 1; PP. 201-204; BIBL. 4 REF.; (CONF. SOLID STATE DEVICES. 8. PROC.; TOKYO; 1976)Conference Paper

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