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A 350 CHARACTER TFT-EL DISPLAY.BRODY TP; LUO FC; DAVIES DH et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 200-203; BIBL. 1 REF.Conference Paper

COPLANAR-ELECTRODE THIN-FILM INSB TRANSISTORLUO FC; EPSTEIN M.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 8; PP. 997-999; BIBL. 13 REF.Serial Issue

INFLUENCE OF FINITE SEMICONDUCTOR THICKNESS ON THIN FILM TRANSISTOR CHARACTERISTICS.PAUWELS HJ; BURGELMAN M.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 27; NO 2; PP. 273-286Article

INFLUENCE OF A FLATBAND-VOLTAGE VARIATION ALONG THE CHANNEL ON THE DRAIN CHARACTERISTICS OF A TFT.BURGELMAN M; PAUWELS HJ.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 459-461; BIBL. 12 REF.Article

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CDS-SI WIDE-BAND-GAP EMITTER TRANSISTORS.BRIAN MT.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 5; PP. 543-550; H.T. 1; BIBL. 18 REF.Article

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EN POLONAIS = ETUDE DE L'INSTABILITE DES TRANSISTORS A COUCHES MINCES A EFFET DE CHAMP AU CDSEMIROWSKI B; RAPIOR A; SZCZUREK I et al.1971; PRACE PRZEMYSL. INST. ELEKTRON.; POLSKA; DA. 1971; VOL. 12; NO 3-4; PP. 138-145; BIBL. 8 REF.Serial Issue

ELECTRONIC CHARACTERIZATION OF DOUBLE-GATE THIN FILM TRANSISTORSCHEN I; LUO FC.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 257-261Article

SLOW STATES IN INSB/SIOX THIN FILM TRANSISTORS.SEWELL H; ANDERSON JC.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 641-649; BIBL. 15 REF.Article

THEORETICAL INFLUENCE OF SURFACE STATES AND BULK TRAPS ON THIN FILM TRANSISTOR CHARACTERISTICS.VAN CALSTER A; PAUWELS HJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 691-698; BIBL. 7 REF.Article

A NEW DIELECTRIC ISOLATION TECHNIQUE FOR BIPOLAR INTEGRATED CIRCUITS USING THIN SINGLE-CRYSTAL SILICON FILMSKAMINS TI.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 7; PP. 915-916; BIBL. 6 REF.Serial Issue

THEORETICAL TEMPERATURE DEPENDENCE OF THIN-FILM TRANSISTORS WITH TRAPS.REFIOGLU HI; DEMASSA TA.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 560-564; BIBL. 12 REF.Article

TFT CHARACTERISTICS WITH DISTRIBUTED TRAPS IN THE SEMICONDUCTOR. = CARACTERISTIQUES DE TRANSISTORS A COUCHES MINCES AVEC DES PIEGES REPARTIS DANS LE SEMICONDUCTEURDEMASSA TA; REFIOGLU HI.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 4; PP. 315-319; BIBL. 13 REF.Article

HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE SILICON FILMSKAMINS TF; MARCOUX PJ.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 8; PP. 159-161; BIBL. 10 REF.Article

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MATRIX DISPLAYS: LED, THIN-FILM-TRANSISTOR, AND THIN-FILM ELECTROLUMINESCENCE.1977; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1977; VOL. 24; NO 7; PP. 891-917; BIBL. DISSEM.Article

THE EFFECT OF ANNEALING ON THE SEMICONDUCTOR IN A THIN FILM TRANSISTOR.SORIAN KH.1977; THIN SOLID. FILMS; NETHERL.; DA. 1977; VOL. 47; NO 2; PP. 195-201; BIBL. 6 REF.Article

AN EXPERIMENTAL AND THEORETICAL STUDY OF POLYCRYSTALLINE THIN FILM TRANSISTORBAUDRAND H; HAMADTO E; AMALRIC JL et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1093-1098; BIBL. 8 REF.Article

A SELF-ALIGNMENT PROCESS FOR AMORPHOUS SILICON THIN FILM TRANSISTORSKODAMA T; TAKAGI N; KAWAI S et al.1982; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1982; VOL. 3; NO 7; PP. 187-189; BIBL. 12 REF.Article

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