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COMMENTS ON: ICVS VBE LAW IN DOUBLE DIFFUSED BIPOLAR TRANSITORS.GERGELY I.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 4; PP. 344; BIBL. 6 REF.Article

ADVANCED LINEAR CIRCUITS.HENDERSON RS.1975; MICROELECTRON. AND RELIABIL.; G.B.; DA. 1975; VOL. 14; NO 4; PP. 353Article

EFFECT OF MOBILITY GRADATION ON EXCESS CARRIER DISTRIBUTION & CUT-OFF FREQUENCY OF A DIFFUSED BASE TRANSITOR AT DIFFERENT INJECTION LEVELS.SINHA T; CHOUDHURY NKD; BISWAS AK et al.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 10; PP. 680-684; BIBL. 7 REF.Article

PLANAR ANALOG TRANSISTOR.MIMURA T.1974; PROC. J.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 9; PP. 1285-1287; BIBL. 8 REF.Article

A NEW TRANSITOR STRUCTURE AND ITS APPLICATION TO MICROENERGY LOGIC.WILAMOWSKI B.1977; BULL. ACAD. POLON. SCI., SCI. TECH.; POLOGNE; DA. 1977; VOL. 25; NO 5; PP. 409-413; ABS. RUSSE; BIBL. 5 REF.Article

EMITTER-COLLECTOR SHORTS IN BIPOLAR DEVICES.BARSON F.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 447-449; BIBL. 20 REF.Conference Paper

TRANSISTORS DRIFTS POUR UNE LARGE GAMME DE COURANTS ET TENSIONS DE COLLECTEURSPIKULIK VG; PISKUNOV AE.1975; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1975; VOL. 19; NO 5; PP. 413-416; BIBL. 6 REF.Article

CALCUL DE CONDUCTION DES COUCHES DES REGIONS A DIFFUSION DANS LES DISPOSITIFS A TRANSISTORSSECHENOV DA; BUBLEJ EE; LITYUK TA et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., ELEKTROMEKH.; S.S.S.R.; DA. 1975; NO 6; PP. 602-605; BIBL. 3 REF.Article

COMPARISON OF NOISE PARAMETERS OF DIFFUSED AND ION-IMPLANTED MICROWAVE TRANSISTORS.LUDVIK S; FROESS P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 4; PP. 40-41; BIBL. 11 REF.Article

EXPLANATION OF ANOMALOUS BASE REGIONS IN TRANSISTORSFAIR RB.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 4; PP. 186-187; BIBL. 3 REF.Serial Issue

MODELLING OF DOUBLE DIFFUSED TRANSISTORS: DOUBLE EXPONENTIAL DISTRIBUTION OF IMPURITY PROFILESRUSTAGI SC; CHATTOPADHYAYA SK.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 3; PP. 166-170; BIBL. 7 REF.Article

A SIMPLE METHOD OF BIPOLAR TRANSISTOR FIELD FACTOR MEASUREMENT.BHAT KN.1975; PROC. I.E.E.E.; U.S.A.; DA. 1975; VOL. 63; NO 5; PP. 828-829; BIBL. 1 REF.Article

ON THE VARIATION OF CUT-OFF FREQUENCY AT HIGH INJECTION LEVEL WITH EMITTER END CONCENTRATION OF A DIFFUSED BASE TRANSITOR.DAW AN; CHOUDHURY NKD; SINHA T et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1108-1109; BIBL. 10 REF.Article

IC VS VBE LAW IN DOUBLE DIFFUSED BIPOLAR TRANSISTORS.ROULSTON DJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 5; PP. 427-429; BIBL. 3 REF.Article

THE PUSH-OUT EFFECT IN SILICON N-P-N DIFFUSED TRANSISTORS.LEE DB.1974; PHILIPS RES. REP., SUPPL.; NETHERL.; DA. 1974; NO 5; PP. 1-131; BIBL. 2 P. 1/2Article

BORON DIFFUSION COEFFICIENT INCREASED BY PHOSPHORUS DIFFUSION.NAKAMURA H; OHYAMA S; TADACHI C et al.1974; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1974; VOL. 121; NO 10; PP. 1377-1381; BIBL. 22 REF.Article

CALCULATIONS OF COLLECTOR CURRENT VARIATION IN BIPOLAR TRANSISTORS.POON HC; WILSON CL.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 9; PP. 973-975; BIBL. 6 REF.Article

ON THE VARIATION OF CUT-OFF FREQUENCY WITH EMITTER END CONCENTRATION OF A DIFFUSED BASE TRANSISTORDAW AN; CHOUDHURY NKD; SEN GUPTA N et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 6; PP. 669-673; BIBL. 9 REF.Serial Issue

OPTIMUM DESIGN OF POWER TRANSISTOR SWITCHESHOWER PL.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 426-435; BIBL. 13 REF.Serial Issue

AN ANALYSIS OF BASE TRANSIT TIME OF DIFFUSED BASE TRANSISTORSKAUSHIK DK; CHATTOPADHYAYA SK.1978; INDIAN J. PURE APPL. PHYS.; IND; DA. 1978; VOL. 16; NO 8; PP. 770-775; BIBL. 14 REF.Article

AN EXPERIMENTAL AND THEORETICAL ANALYSIS OF DOUBLE-DIFFUSED MOS TRANSISTORS.RODGERS TJ; ASAI S; POCHA MD et al.1975; I.E.E.E. SOLID-STATE CIRCUITS.; U.S.A.; DA. 1975; VOL. 10; NO 5; PP. 322-331; BIBL. 14 REF.Article

ULTRALINEAR TRANSISTORS. = LE SYSTEME L5: LES TRANSISTORS ULTRALINEAIRESD'ALTROY FA; JACOBS RM; NACCI JM et al.1974; BELL SYST. TECH. J.; U.S.A.; DA. 1974; VOL. 53; NO 10; PP. 2195-2202; BIBL. 5 REF.Article

MEASUREMENT OF THE BASE DIFFUSION PROFILE OF A NARROW-BASEWIDTH TRANSISTOR.BOOTH RC.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 9; PP. 221-222; BIBL. 9 REF.Article

HIGH SPEED TRANSISTOR WITH DOUBLE BASE DIFFUSION.MAGDO S; MAGDO I.1975; I.B.M. J. RES. DEVELOP.; U.S.A.; DA. 1975; VOL. 19; NO 2; PP. 146-150; BIBL. 10 REF.Article

THE EFFECT OF AUGER RECOMBINATION ON THE EMITTER INJECTION EFFICIENCY OF BIPOLAR TRANSISTORS.SHENG WW.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 1; PP. 25-27; BIBL. 7 REF.Article

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