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PHYSICS OF SHORT-GATE GAAS MESFET'S FROM HYDROSTATIC PRESSURE STUDIESKIEHL RA; OSBOURN GC.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 977-983; BIBL. 36 REF.Article

ELECTRON AND NEUTRON DAMAGE IN N- AND P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS.MILLER DJ; RYAN RD.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 2; PP. 99-104; BIBL. 16 REF.Article

POWER LAW TRANSFER CHARACTERISTIC OF JUNCTION FIELD EFFECT TRANSISTORS IN MAGNETIC FIELD.SINGH RN; PRASAD HC.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 8; PP. 594-595; BIBL. 6 REF.Article

EMISSION PROBABILITY OF HOT ELECTRONS FOR HIGHLY DOPED SILICON-ON-SAPPHIRE IGFETGARRIGUES M; HELLOUIN Y.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 928-936; BIBL. 14 REF.Article

THEORY OF NEGATIVE RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS.MIZUNO H; KANO G; TAKAGI H et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 313-317; BIBL. 8 REF.Article

A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

EFFECT OF LONG-TERM STRESS ON IGFET DEGRADATIONS DUE TO HOT ELECTRON TRAPPINGMATSUMOTO H; SAWADA K; ASAI S et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 923-928; BIBL. 22 REF.Article

A 5000-CHANNEL POWER FET WITH A NEW DIFFUSED GATE STRUCTURE.OZAWA O; SASAKI Y; IWASAKI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 163-166; BIBL. 3 REF.Conference Paper

OPTIMIZATION OF LOW-NOISE GAAS MESFETS'SFUKUI H; DILORENZO JV; HEWITT BS et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1034-1037; BIBL. 11 REF.Article

DEVICE QUALITY N-TYPE LAYERS PRODUCED BY ION IMPLANTATION OF TE AND S INTO GAAS.STOLTE CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 585-587; BIBL. 2 REF.Conference Paper

GAAS MESFET PERFORMANCE.HUANG HC; DRUKIER I; CAMISA RL et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 235-237; BIBL. 4 REF.Conference Paper

HIGH SPEED, LOW POWER GAAS JFET INTEGRATED CIRCUITS.NOTTHOFF JK; ZULEEG R.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 624Conference Paper

RECENT ADVANCES IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTORS.LIECHTI CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1974; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 6-10; BIBL. 18 REF.Conference Paper

RELIABILITY STUDIES OF ONE-MICRON SCHOTTKY GATE GAAS FET.KOZU H; NAGASAKO T; OGAWA M et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 247-250; BIBL. 1 REF.Conference Paper

STEADY STATE ANALYSIS OF FIELD EFFECT TRANSISTORS VIA THE FINITE ELEMENT METHOD.COTTRELL PE; BUTURLA EM.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 51-54; BIBL. 11 REF.Conference Paper

JFET OPTICAL DETECTORS IN THE CHARGE STORAGE MODE.SHANNON JM; LOHSTROH J.1974; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1974; VOL. 21; NO 11; PP. 720-728; BIBL. 5 REF.Article

BETTER UNDERSTANDING OF FET OPERATION YIELDS VIABLE MONOLITHIC J-FET OP AMPFULLAGAR D.1972; ELECTRONICS; U.S.A.; DA. 1972; VOL. 45; NO 23; PP. 98-101; BIBL. 5 REF.Serial Issue

TECHNOLOGIE ET APPLICATIONS DES COMMUTATEURS ANALOGIQUES1982; ELECTRON. APPL.; ISSN 0243-489X; FRA; DA. 1982; NO 22; PP. 31-45; BIBL. 8 REF.Article

"BIPOLAR-MODE" TRANSISTORS ON A VOLTAGE-CONTROLLED SCHEMETAMAMA T; SAKAUE M; MIZUSHIMA Y et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 7; PP. 777-783; BIBL. 11 REF.Article

STABILITY OF PERFORMANCE AND INTERFACIAL PROBLEMS IN GAASMESFET'SITOH T; YANAI H.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1037-1045; BIBL. 28 REF.Article

LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFET'S.TROUTMAN RR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 419-425; BIBL. 18 REF.Article

POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE.FUKUTA M; SUYAMA K; SUZUKI H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 312-317; BIBL. 14 REF.Article