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Results 1 to 25 of 18641

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TECHNOLOGIE DE REALISATION DES TRANSISTORS A EFFET DE CHAMP DE PETITES DIMENSIONS.ARNODO C; NUZILLAT G.1975; REV. TECH. THOMSON-CSF; FR.; DA. 1975; VOL. 7; NO 2; PP. 359-442; ABS. ANGL. ALLEM.; BIBL. 2 P.Article

TRANSISTORS AU SELENIUM EN COUCHES MINCES A ELECTRODE DE COMMANDE ISOLEEGADZHIEV ND; TALIBI MA.1974; IN: FIZ. SVOJSTVA SELENA SELENOVYKH PRIB.; BAKU; EH LM; DA. 1974; PP. 202-207; BIBL. 10 REF.Book Chapter

THE CHARACTERISTICS AND APPLICATIONS OF A V-SHAPED NOTCHED-CHANNEL FIELD-EFFECT TRANSISTOR (VFET).MOK TD; SALAMA CAT.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 2; PP. 159-166; H.T. 1; BIBL. 16 REF.Article

PHOTOEFFECTS IN JUNCTION FIELD EFFECT TRANSISTORS UNDER STRONG ILLUMINATIONLEHOVEC K; SEELEY WG.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 11; PP. 1253-1259; BIBL. 7 REF.Serial Issue

PHYSICS OF SHORT-GATE GAAS MESFET'S FROM HYDROSTATIC PRESSURE STUDIESKIEHL RA; OSBOURN GC.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 977-983; BIBL. 36 REF.Article

ELECTRON AND NEUTRON DAMAGE IN N- AND P-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS.MILLER DJ; RYAN RD.1974; RAD. EFFECTS; G.B.; DA. 1974; VOL. 21; NO 2; PP. 99-104; BIBL. 16 REF.Article

POWER LAW TRANSFER CHARACTERISTIC OF JUNCTION FIELD EFFECT TRANSISTORS IN MAGNETIC FIELD.SINGH RN; PRASAD HC.1974; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1974; VOL. 12; NO 8; PP. 594-595; BIBL. 6 REF.Article

EMISSION PROBABILITY OF HOT ELECTRONS FOR HIGHLY DOPED SILICON-ON-SAPPHIRE IGFETGARRIGUES M; HELLOUIN Y.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 928-936; BIBL. 14 REF.Article

THEORY OF NEGATIVE RESISTANCE OF JUNCTION FIELD-EFFECT TRANSISTORS.MIZUNO H; KANO G; TAKAGI H et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 313-317; BIBL. 8 REF.Article

A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

EFFECT OF LONG-TERM STRESS ON IGFET DEGRADATIONS DUE TO HOT ELECTRON TRAPPINGMATSUMOTO H; SAWADA K; ASAI S et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 923-928; BIBL. 22 REF.Article

A 5000-CHANNEL POWER FET WITH A NEW DIFFUSED GATE STRUCTURE.OZAWA O; SASAKI Y; IWASAKI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 163-166; BIBL. 3 REF.Conference Paper

CARACTERISTIQUES LIMITES DES CIRCUITS INTEGRES A L'ARSENIURE DE GALLIUM A TRANSISTORS A EFFET DE CHAMPSTAROSEL'SKIJ VI; SAPEL'NIKOV AN.1982; MIKROELEKTRONIKA; ISSN 0544-1269; SUN; DA. 1982; VOL. 11; PP. 95-103; BIBL. 10 REF.Article

CONTROL OF GATE-CHAIN AVALANCHE IN GAAS MESFET'SWEMPLE SH; NIEHAUS WC; COX HM et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1013-1018; BIBL. 9 REF.Article

FEEDBACK EFFECTS IN THE GAAS MESFET MODEL.VENDELIN GD.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 383-385; BIBL. 7 REF.Article

HIGH-SPEED 1 MU M GAAS M.E.S.F.E.T.KOHN E; WUELLER R; STAHLMANN R et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 171-172; BIBL. 3 REF.Article

MAGNETIC SENSITIVITY OF JUNCTION FIELD EFFECT TRANSISTORS WITH UNIFORM CHANNEL CURRENT DENSITY.SIVA RAM T; RAMACHANDRA RAO B.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 8; PP. 419-420; BIBL. 3 REF.Article

EFFET PHOTOELECTRIQUE PROVOQUE PAR L'ILLUMINATION DES PORTEURS LIBRES PAR DES PHOTONS DANS UN TRANSISTOR A EFFET CHAMP A GRILLE ISOLEETESHABAEV A; MIRAKHMEDOV SH.1974; IZVEST. AKAD. NAUK UZ. S.S.R., FIZ.-MAT. NAUK; S.S.S.R.; DA. 1974; VOL. 18; NO 4; PP. 55-58; BIBL. 10 REF.Article

A TWO-DIMENSIONAL ANALYSIS OF INDIUM PHOSPHIDE JUNCTION FIELD EFFECT TRANSISTORS WITH LONG AND SHORT CHANNELSHIMSWORTH B.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 8; PP. 931-939; BIBL. 8 REF.Serial Issue

SCHOTTKY-BARRIER FET'S... NEXT LOW-NOISE DESIGNSTURNER JA; ARNOLD S.1972; MICROWAVES; U.S.A.; DA. 1972; VOL. 11; NO 4; PP. 44-49 (5 P.); BIBL. 1 REF.Serial Issue

MODELE UNIDIMENSIONNEL DE TRANSISTOR MICROONDE A EFFET DE CHAMP AVEC PORTE DE SCHOTTKYKOPAENKO VK; ROMANYUK VA.1981; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1981; VOL. 24; NO 10; PP. 39-43; BIBL. 11 REF.Article

ION IMPLANTED GAAS ENHANCEMENT MODE JFET'S.VODICKA VW.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 625-628; BIBL. 5 REF.Conference Paper

TRANSIENT 2-DIMENSIONAL SIMULATION OF A SUBMICROMETRE GATE-LENGTH M.E.S.F.E.T.BARNES JJ; LOMAX RJ.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 21; PP. 519-521; BIBL. 6 REF.Article

TWO-DIMENSIONAL ANALYSIS OF TRIODE-LIKE OPERATION OF JUNCTION GATE FET'S.YAMAGUCHI K; TOYABE T; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1047-1049; BIBL. 6 REF.Article

VDS VOLTAGE CAPABILITIES OF A DIFFUSED J.F.E.T. WITH A VERTICAL-CHANNEL ARRANGEMENT.MORENZA JL; ESTEVE D.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 172-174; BIBL. 8 REF.Article

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