Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("TRANSISTOR EFFET CHAMP BARRIERE SCHOTTKY")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 2554

  • Page / 103

Export

Selection :

  • and

A SUB-HALF-MICRON GATE-LENGTH GAAS MESFET WITH NEW GATE STRUCTUREIMAI Y; UCHIDA M; YAMAMOTO K et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 99-101; BIBL. 4 REF.Article

EQUIVALENT CIRCUIT OF GAAS DUAL GATE MESFETSTSIRONIS C; MEIERER R.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 13; PP. 477-479; BIBL. 6 REF.Article

A TEMPERATURE MODEL FOR THE GAAS MESFETCURTICE WR; YONG HOON YUN.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 954-962; BIBL. 23 REF.Article

PHYSICS OF SHORT-GATE GAAS MESFET'S FROM HYDROSTATIC PRESSURE STUDIESKIEHL RA; OSBOURN GC.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 977-983; BIBL. 36 REF.Article

DIRECT COMPARISON OF THE ELECTRON-TEMPERATURE MODEL WITH THE PARTICLE-MESH (MONTE CARLO) MODEL FOR THE GAAS MESFETCURTICE WR.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 12; PP. 1942-1943; BIBL. 7 REF.Article

HIGH-EFFICIENCY GAAS POWER MESFETS PREPARED BY ION IMPLANTATIONFENG M; KANBER H; EU VK et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1097-1098; BIBL. 6 REF.Article

HIGH-SPEED FREQUENCY DIVIDERS WITH QUASI-NORMALLY-OFF GAAS MESFETSDAMAY KAVALA F; NUZILLAT G; ARNODO C et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 968-970; BIBL. 8 REF.Article

ORIENTATION EFFECT OF SELF-ALIGNED SOURCE/DRAIN PLANAR GAAS SCHOTTKY BARRIER FIELD-EFFECT TRANSISTORSYOKOYAMA N; ONODERA H; OHNISHI T et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 3; PP. 270-271; BIBL. 5 REF.Article

EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETSDUMAS JM; PAUGAM J; LE MOUELLIC C et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1094-1095; BIBL. 9 REF.Article

EFFECTIVE ELECTRON MOBILITY IN INVERSION-MODE AL2O3-INP MISFETSSHINODA Y; KOBAYASHI T.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 11; PP. 1119-1124; BIBL. 12 REF.Article

CONTROL OF GATE-CHAIN AVALANCHE IN GAAS MESFET'SWEMPLE SH; NIEHAUS WC; COX HM et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1013-1018; BIBL. 9 REF.Article

FEEDBACK EFFECTS IN THE GAAS MESFET MODEL.VENDELIN GD.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 383-385; BIBL. 7 REF.Article

HIGH-SPEED 1 MU M GAAS M.E.S.F.E.T.KOHN E; WUELLER R; STAHLMANN R et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 8; PP. 171-172; BIBL. 3 REF.Article

SCHOTTKY-BARRIER FET'S... NEXT LOW-NOISE DESIGNSTURNER JA; ARNOLD S.1972; MICROWAVES; U.S.A.; DA. 1972; VOL. 11; NO 4; PP. 44-49 (5 P.); BIBL. 1 REF.Serial Issue

THE EFFECT OF LOGIC CELL CONFIGURATION, GATELENGTH, AND FAN-OUT ON THE PROPAGATION DELAYS OF GAAS MESFET LOGIC GATESNAMORDI MR; DUNCAN WM.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 402-410; BIBL. 7 REF.Article

POWER-LIMITING BREAKDOWN EFFECTS IN GAAS MESFET'SFRENSLEY WR.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 962-970; BIBL. 18 REF.Article

RELIABILITY STUDY OF GAAS MESFET'S.IRIE T; NAGASAKO I; KOHZU H et al.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 321-328; BIBL. 4 REF.Article

GAAS DUAL-GATE SCHOTTKY-BARRIER FET'S FOR MICROWAVE FREQUENCIES.ASAI S; MURAI F; KODERA H et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 10; PP. 897-904; BIBL. 14 REF.Article

ETUDE DE PORTES LOGIQUES RAPIDES ET A FAIBLE CONSOMMATION A TRANSISTORS MESFET INTEGRES SUR SILICIUM.PURON JP.1975; ; S.L.; DA. 1975; PP. 1-215; BIBL. 2 P.; (THESE DOCT. 3E CYCLE, SPEC. ELECTRON.; PARIS-SUD)Thesis

SI AND GAAS 0.5 MU M-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORSBAECHTOLD W; DAETWYLER K; FORSTER T et al.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 232-234; BIBL. 6 REF.Serial Issue

OPTIMIZATION OF LOW-NOISE GAAS MESFETS'SFUKUI H; DILORENZO JV; HEWITT BS et al.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 6; PP. 1034-1037; BIBL. 11 REF.Article

DEVICE QUALITY N-TYPE LAYERS PRODUCED BY ION IMPLANTATION OF TE AND S INTO GAAS.STOLTE CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 585-587; BIBL. 2 REF.Conference Paper

GAAS MESFET PERFORMANCE.HUANG HC; DRUKIER I; CAMISA RL et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 235-237; BIBL. 4 REF.Conference Paper

RECENT ADVANCES IN HIGH-FREQUENCY FIELD-EFFECT TRANSISTORS.LIECHTI CA.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1974; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 6-10; BIBL. 18 REF.Conference Paper

RELIABILITY STUDIES OF ONE-MICRON SCHOTTKY GATE GAAS FET.KOZU H; NAGASAKO T; OGAWA M et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 247-250; BIBL. 1 REF.Conference Paper

  • Page / 103