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EMISSION PROBABILITY OF HOT ELECTRONS FOR HIGHLY DOPED SILICON-ON-SAPPHIRE IGFETGARRIGUES M; HELLOUIN Y.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 928-936; BIBL. 14 REF.Article

EFFECT OF LONG-TERM STRESS ON IGFET DEGRADATIONS DUE TO HOT ELECTRON TRAPPINGMATSUMOTO H; SAWADA K; ASAI S et al.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 8; PP. 923-928; BIBL. 22 REF.Article

BESTIMMUNG DER OBERFLAECHENZUSTANDSDICHTE ANHAND VON MOS-TRANSISTORMESSUNGEN IM SCHWACHEN INVERSIONSBEREICH.PASZTOR G.1975; ACTA TECH. ACAD. SCI. HUNGAR.; HONGR.; DA. 1975; VOL. 80; NO 1-2; PP. 237-250; ABS. ANGL. RUSSE; BIBL. 5 REF.Article

SUBTHRESHOLD SLOPE FOR INSULATED GATE FIELD-EFFECT TRANSISTORS.TROUTMAN RR.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1049-1051; BIBL. 3 REF.Article

EFFET PHOTOELECTRIQUE PROVOQUE PAR L'ILLUMINATION DES PORTEURS LIBRES PAR DES PHOTONS DANS UN TRANSISTOR A EFFET CHAMP A GRILLE ISOLEETESHABAEV A; MIRAKHMEDOV SH.1974; IZVEST. AKAD. NAUK UZ. S.S.R., FIZ.-MAT. NAUK; S.S.S.R.; DA. 1974; VOL. 18; NO 4; PP. 55-58; BIBL. 10 REF.Article

MILLER LONG-DURATION SWEEP GENERATOR.DANILOVIC DZ; VESELINOVIC DL; SOBAJIC MV et al.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 9; PP. 152-154; BIBL. 4 REF.Article

CHARACTERISTICS OF A DEPLETION-TYPE IGFETHUANG JST.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 5; PP. 513-514; BIBL. 5 REF.Serial Issue

STEADY STATE MATHEMATICAL THEORY FOR THE INSULATED GATE FIELD EFFECT TRANSISTORKENNEDY DP; MURLEY PC.1973; I.B.M.J. RES. DEVELOP.; U.S.A.; DA. 1973; VOL. 17; NO 1; PP. 2-12; BIBL. 12 REF.Serial Issue

A TWO-DIMENSIONAL MATHEMATICAL MODEL OF THE INSULATED-GATE FIELD-EFFECT TRANSISTORMOCK MS.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 5; PP. 601-609; BIBL. 18 REF.Serial Issue

STEADY STATE ANALYSIS OF FIELD EFFECT TRANSISTORS VIA THE FINITE ELEMENT METHOD.COTTRELL PE; BUTURLA EM.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 51-54; BIBL. 11 REF.Conference Paper

I.G.F.E.TS IMPROVE THE LINEARITY OF BOOTSTRAP SWEEP GENERATORSSOBAJIC MV; VESELINOVIC DI; DANILOVIC DZ et al.1973; ELECTRON. ENGNG; G.B.; DA. 1973; VOL. 45; NO 543; PP. 63-65; BIBL. 5 REF.Serial Issue

TECHNOLOGIE ET APPLICATIONS DES COMMUTATEURS ANALOGIQUES1982; ELECTRON. APPL.; ISSN 0243-489X; FRA; DA. 1982; NO 22; PP. 31-45; BIBL. 8 REF.Article

LOW-LEVEL AVALANCHE MULTIPLICATION IN IGFET'S.TROUTMAN RR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 4; PP. 419-425; BIBL. 18 REF.Article

RESISTIVE INSULATED GATE F.E.T. ARRAYS FOR ANALOGUE-TO-DIGITAL CONVERSION.WHELAN MV; DAVERVELD LA.1975; ELECTRON. ENGNG; G.B.; DA. 1975; VOL. 47; NO 564; PP. 46-49 (3P.); BIBL. 3 REF.Article

A SIMPLE THEORY TO PREDICT THE THRESHOLD VOLTAGE OF SHORT-CHANNEL IGFET'S.YAU LD.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1059-1063; BIBL. 7 REF.Article

INVERSION-MODE INSULATED GATE GA0.47 IN0.53 AS FIELD-EFFECT TRANSISTORSWIEDER HH; CLAWSON AR; ELDER DI et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 3; PP. 73-74; BIBL. 9 REF.Article

SOURCE LARGE GAMME DE SIGNAUX ANALOGIQUES A TRANSISTORS A EFFET DE CHAMP A PORTE ISOLEEPUDALOV VM.1976; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1976; NO 1; PP. 118-119; BIBL. 2 REF.Article

MODELING OF AN ION-IMPLANTED SILICON-GATE DEPLETION-MODE IGF ET.HUANG JST; TAYLOR GW.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 995-1001; BIBL. 5 REF.Article

SIMPLE I/V MODEL FOR SHORT-CHANNEL I.G.F.E.T.S. IN THE TRIODE REGION.YAU LD.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 2; PP. 44-45; BIBL. 5 REF.Article

APPLICATION OF THE OPTIMIZATION PROGRAM AOP TO THE DESIGN OF MEMORY CIRCUITS.HACHTEL GD; LIGHTNER MR; KELLY HJ et al.1975; I.E.E.E. TRANS. CIRCUITS SYST.; U.S.A.; DA. 1975; VOL. 22; NO 6; PP. 496-503; BIBL. 8 REF.Article

TRANSISTORS AU SELENIUM EN COUCHES MINCES A ELECTRODE DE COMMANDE ISOLEEGADZHIEV ND; TALIBI MA.1974; IN: FIZ. SVOJSTVA SELENA SELENOVYKH PRIB.; BAKU; EH LM; DA. 1974; PP. 202-207; BIBL. 10 REF.Book Chapter

N-CHANNEL IGFET DESIGN LIMITATIONS DUE TO HOT ELECTRON TRAPPING.ABBAS SA; DOCKERTY RC.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 35-38; BIBL. 8 REF.Conference Paper

OPTICAL PROPERTIES OF LAYER STRUCTURE COMPOUNDS.HARBEKE G; TOSATTI E.1975; R.C.A. REV.; U.S.A.; DA. 1975; VOL. 36; NO 1; PP. 40-69; BIBL. 25 REF.Article

BUCKET-BRIGADE SHIFT-REGISTER OPERATION-EXACT CORRELATION BETWEEN EXPERIMENTAL DATA AND A COMPUTER MODELLEWIS ET.1973; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1973; VOL. 8; NO 3; PP. 207-221; BIBL. 8 REF.Serial Issue

LOW-LEAKAGE N- AND P-CHANNEL SILICON-GATE FET'S WITH AN SIO2-SI3N4-GATE INSULATOR.DOCKERTY RC; ABBAS SA; BARILE CA et al.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 2; PP. 33-39; BIBL. 10 REF.Article

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