1-KW-SCAHLTVERSTAERKER MIT HOCHSPANNUNGSTRANSISTOREN = AMPLIFICATEUR DE COMMUTATION DE 1 KW A TRANSISTORS A HAUTE TENSIONWASELOWSKI B.1981; RADIO FERNS. ELEKTRON.; ISSN 0033-7900; DDR; DA. 1981; NO 12; PP. 751-755; BIBL. 3 REF.Article

A MICROWAVE HIGH VOLTAGE BIPOLAR POWER TRANSISTOR.VERMA KB; WESTLAKE RT.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 155-158; BIBL. 5 REF.Conference Paper

REPORT ON THE WORK ON DISCRETE DEVICES: HIGH VOLTAGE TRANSISTORS AND VARACTOR DIODESKHOKLE WS.1980; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1980; VOL. 26; NO 2; PP. 142-144; BIBL. 7 REF.Article

INDUCTIVE SWITCHING OF HIGH VOLTAGE TRANSISTORSLEAR T.1979; NEW ELECTRON.; GBR; DA. 1979; VOL. 12; NO 4; PP. 28Article

REALISEZ VOTRE CIRCUIT DE DEFLEXION VERTICALE A L'AIDE DE TRANSISTORS HAUTE TENSION.PERRIN JC.1976; ELECTRON. MICROELECTRON. INDUSTR.; FR.; DA. 1976; NO 219; PP. 27-31Article

ETABLISSEMENT DE L'ETAT STATIONNAIRE LORS DU BRANCHEMENT D'UN TRANSISTOR HT DE PUISSANCEGRIGOR'EV BI; RUDSKIJ VA; TOGATOV VV et al.1983; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1983; VOL. 28; NO 6; PP. 1176-1181; BIBL. 7 REF.Article

LA COMMANDE DE BASE DES TRANSISTORS HAUTE TENSIONRISCHMUELLER K.1979; ELECTRONIQUE; CHE; DA. 1979; NO 5-6; PP. EL1-EL5Article

OPTIMUM SEMICONDUCTORS FOR POWER FIELD EFFECT TRANSISTORSBALIGA BJ; ADLER MS; OLIVER DW et al.1981; ELECTRON DEVICE LETT.; ISSN 0193-8576; USA; DA. 1981; VOL. 2; NO 7; PP. 162-164; BIBL. 9 REF.Article

THE EFFECTS OF STACKING FAULTS ON THE ELECTRICAL PROPERTIES OF A HIGH VOLTAGE POWER TRANSISTOR.KATO T; KOYAMA H; MATSUKAWA T et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 11; PP. 955-959; H.T. 1; BIBL. 9 REF.Article

APPLICATION OF A CHARGE-CONTROL MODEL TO HIGH-VOLTAGE POWER TRANSISTORS.HOWER PL.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 863-870; BIBL. 23 REF.Article

A HIGH-VOLTAGE MOSFET IN POLYCRYSTALLINE SILICONFARROKH MOHAMMADI; SARASWAT KC; MEINDL JD et al.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 293-295; BIBL. 13 REF.Article

LA COMMANDE DE BASE DES TRANSISTORS HAUTE TENSIONRISCHMUELLER K.1979; ELECTRONIQUE; CHE; DA. 1979; NO 4; PP. EL1-EL8Article

HIGHLY RELIABLE HIGH-VOLTAGE TRANSISTORS BY USE OF THE SIPOS PROCESS.MATSUSHITA T; AOKI T; OHTSU T et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 826-830; BIBL. 11 REF.Article

UTILISATION DU SILICIUM POLYCRISTALLIN SEMI-ISOLANT POUR LA PASSIVATION DE TRANSISTORS MESA HAUTE TENSION A COUCHES EPITAXIALES.LAOU SD.1978; DGRST-7670657; FR.; DA. 1978; PP. 1-20; H.T. 29; BIBL. 10 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

HIGH WITHSTANDING VOLTAGE J-FETS EQUAL VACUUM TUBES FOR AUDIO EQUIPMENT APPLICATION.TERADA S; ARAI S.1977; J. ELECTRON. ENGNG; JAP.; DA. 1977; NO 123; PP. 50-54Article

APPLICATION OF LOW-IMPURITY CONCENTRATION (HIGH-RESISTIVITY) SI EPITAXIAL TECHNIQUE TO HIGH-VOLTAGE POWER TRANSISTORS.SUZUKI T; URA M; OGAWA T et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 982-984; BIBL. 4 REF.Article

New intra-gate-offset high-voltage thin-film transistor with misalignment immunityHUANG, T.-Y; LEWIS, A. G; WU, I.-W et al.Electronics Letters. 1989, Vol 25, Num 8, pp 544-545, issn 0013-5194, 2 p.Article

Transistor haute tension à injection de photons à base d'une hétérostructureGRIGOR'EV, B. I; KOROL'KOV, V. I; ROZHKOV, A. V et al.Fizika i tehnika poluprovodnikov. 1985, Vol 19, Num 5, pp 878-884, issn 0015-3222Article

A novel CMOS-compatible high-voltage transistor structureZAHIR PARPIA; MENA, J. G; SALAMA, C. A. T et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 12, pp 1948-1952, issn 0018-9383Article

EMITTER CURRENT-CROWDING IN HIGH-VOLTAGE TRANSISTORSHOWER PL; EINTHOVEN WG.1978; I.E.E.E. TRANS. ELECTRON. DEVICES; USA; DA. 1978; VOL. 25; NO 4; PP. 465-471; BIBL. 17 REF.Article

ETUDE DE LA DIFFUSION PROFONDE DE L'ALUMINIUM DANS LES TRANSISTORS ET DARLINGTONS DE PUISSANCE HAUTE TENSION POUR AMELIORER LEUR TENUE EN ENERGIE ET EN COMMUTATION.WURTZBOURGER JP.1976; DGRST-7570714; FR.; DA. 1976; PP. 1-34; ABS. ANGL.; BIBL. 7 REF.Report

POWER DEVICES1978; REV. PHYS. APPL.; FRA; DA. 1978; VOL. 13; NO 12; PP. 725-740; ABS. FRE; BIBL. DISSEM.Conference Paper

One-dimensional approach for floating field limiting ring enhanced high-voltage power transistor designLIU, B. D; SUNE, C. T.International journal of electronics. 1989, Vol 66, Num 6, pp 891-899, issn 0020-7217Article

Safe operating area for 1200-V nonlatchup bipolar mode MOSFET'sNAKAGAWA, A; YAMAGUCHI, Y; WATANABE, K et al.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 351-355, issn 0018-9383Article

Device simulation of a n-DMOS cell with trench isolationKAMOULAKOS, G; HANIOTAKIS, Th; TSIATOUHAS, Y et al.Microelectronics journal. 2001, Vol 32, Num 1, pp 75-80, issn 0959-8324Article