kw.\*:("TRANSISTOR HETEROJONCTION")
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APPLICATION OF THERMAL PULSE ANNEALING TO ION-IMPLANTED GAALAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORSASBECK PM; MILLER DL; BABCOCK EJ et al.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 81-84; BIBL. 14 REF.Article
GAALAS-GAAS BALLISTIC HETEROJUNCTION BIPOLAR TRANSISTORANKRI D; EASTMAN LF.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 17; PP. 750-751; BIBL. 8 REF.Article
(GAAL)AS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS WITH GRADED COMPOSITION IN THE BASEMILLER DL; ASBECK PM; ANDERSON RJ et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 10; PP. 367-368; BIBL. 7 REF.Article
(GAAL) AS-GAAS HETEROJUNCTION TRANSISTORS WITH HIGH INJECTION EFFICIENCY. = TRANSISTORS A HETEROJONCTION (GAAL) AS-GAAS AVEC HAUT RENDEMENT D'INJECTIONKONAGAI M; TAKAHASHI K.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 5; PP. 2120-2124; BIBL. 11 REF.Article
DUREES DE VIE DES PORTEURS HORS D'EQUILIBRE ET EFFETS DE REEMISSION OPTIQUE DANS LES HETEROSTRUCTURES DE INGAASPGARBUZOV DZ; GORELENOK AT; MDIVANI VN et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 2; PP. 379-384; BIBL. 10 REF.Article
HIGH-SPEED GAALAS-GAAS HETERO-JUNCTION BIPOLAR TRANSISTORS WITH NEAR-BALLISTIC OPERATIONANKRI D; SCHAFF WJ; SMITH P et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 147-149; BIBL. 6 REF.Article
HIGH-SPEED GAAS HETEROJUNCTION BIPOLAR PHOTOTRANSISTOR GROWN BY MOLECULAR BEAM EPITAXYANKRI D; SCHAFF WJ; BARNARD J et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 8; PP. 278-280; BIBL. 6 REF.Article
HETEROSTRUCTURE BIPOLAR TRANSISTORS AND INTEGRATED CIRCUITSKROEMER H.1982; PROC. IEEE; ISSN 0018-9219; USA; DA. 1982; VOL. 70; NO 1; PP. 13-25; BIBL. 51 REF.Article
A SILICON HETEROJUNCTION TRANSISTORMATSUSHITA T; OH UCHI N; HAYASHI H et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 7; PP. 549-550; BIBL. 9 REF.Article
TUNNEL TRIODE-A TUNNELING BASE TRANSISTOR.CHANG LL; ESAKI L.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 10; PP. 687-689; BIBL. 12 REF.Article
A new fabrication technology for AlGaAs/GaAs HEMT LSI's using InGaAs nonalloyed ohmic contactsKURODA, S; HARADA, N; KATAKAMI, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2196-2203, issn 0018-9383, 8 p., 1Article
Breakdown behavior of GaAs/AlGaAs HBT'sCHEN, J. J; GUANG-BO GAO; JEN-INN CHYI et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2165-2172, issn 0018-9383, 8 p., 1Article
Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFET'sNGUYEN, L. D; TASKER, P. J; RADULESCU, D. C et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2243-2248, issn 0018-9383, 6 p., 1Article
Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flowTHORNTON, R. L; MOSBY, W. J; CHUNG, H. F et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2156-2164, issn 0018-9383, 9 p., 1Article
High-speed and large noise margin tolerance E/D logic gates with LDD structure DMT's fabricated using selective RIE technologyHIDA, H; TSUKADA, Y; OGAWA, Y et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2223-2230, issn 0018-9383, 8 p., 1Article
Pseudomorphic bipolar quantum resonant-tunneling transistorSEABAUGH, A. C; FRENSLEY, W. R; RANDALL, J. N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2328-2334, issn 0018-9383, 7 p., 1Article
The development of heterojunction integrated injection logicHAN-TZONG YUAN; HUNG-DAH SHIH; DELANEY, J et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2083-2092, issn 0018-9383, 10 p., 1Article
An analytical current-voltage characteristics model for high electron mobility transistors based on nonlinear charge-control formulationAN-JUI SHEY; KU, W. H.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2299-2306, issn 0018-9383, 8 p., 1Article
Numerical simulation and comparison of Si BJT's and Si1-xGex HBT'sPEJCINOVIC, B; KAY, L. E; TING-WEI TANG et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2129-2137, issn 0018-9383, 9 p., 1Article
A 0.5-μm-gate GaAs/AlGaAs inverted HEMT IC-multiplier and D/A converterNISHI, S; SEKI, S; SAITO, T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2191-2195, issn 0018-9383, 5 p., 1Article
Analysis of the operation of GaAlAs/GaAs HBT'sSANDIP TIWARI; FRANK, D. J.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2105-2121, issn 0018-9383, 17 p., 1Article
Recent advances in ultrahigh-speed HEMT LSI technologyABE, M; MIMURA, T; KOBAYASHI, N et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2021-202031, issn 0018-9383, 200011 p., 1Article
Si/SiGe heterojunction bipolar transistor made by molecular-beam epitaxyNAROZNY, P; DAMBKES, H; KIBBEL, H et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2363-2366, issn 0018-9383, 4 p., 1Article
Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMT'sHIN-FAI CHAU; PAVLIDIS, D; CAZAUX, J.-L et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2288-2298, issn 0018-9383, 11 p., 1Article
The effects of heavy impurity doping on AlGaAs/GaAs bipolar transistorsKLAUSMEIER-BROWN, M. E; LUNDSTROM, M. S; MELLOCH, M. R et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 10, pp 2146-2155, issn 0018-9383, 10 p., 1Article
