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MODELLIERUNG BIPOLARER MIKROWELLENTRANSISTOREN MIT DEM NETZWERK-ANALYSEPROGRAM SPICE = MODELISATION DE TRANSISTORS BIPOLAIRES POUR MICRO-ONDES, PAR LE PROGRAMME D'ANALYSE DE RESEAUX SPICESCHWADERER B.1981; AEUE, ARCH. ELEKTRON. UEBERTRAGUNGSTECH.; ISSN 0001-1096; DEU; DA. 1981; VOL. 35; NO 9; PP. 368-372; ABS. ENG; BIBL. 9 REF.Article

A SIMPLE U.H.F. TRANSISTOR MODEL.STEWART RD; KASIM TA.1978; INTERNATION. J. ELECTR. ENGNG EDUC.; GBR; DA. 1978; VOL. 15; NO 4; PP. 327-340; ABS. FRE/GER/SPA; BIBL. 6 REF.Article

MICROWAVE FIELD-EFFECT TRANSISTORS, 1976.LIECHTI CA.1976; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1976; VOL. 24; NO 6; PP. 279-300; BIBL. 5 P.Article

INFLUENCE DES PARAMETRES TECHNOLOGIQUES SUR LES CARACTERISTIQUES D'UN TRANSISTOR HYPERFREQUENCE A 2,5 GHZ COMBINANT DIFFUSION ET IMPLANTATION.ASSEMAT JL; DUMETZ A; WATTREMEZ JM et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 150-154; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

MICROWAVE TRANSISTOR REVIEW. I. GAAS FIELD-EFFECT TRANSISTORS. II. MICROWAVE BIPOLAR TRANSISTORS.BARRERA JS; POOLE WE.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 2; PP. 28-36 (5P.); BIBL. 2 REF.Article

THE RF PULSE SUSCEPTIBILITY OF UHF TRANSISTORS.WHALEN JJ.1975; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; U.S.A.; DA. 1975; VOL. 17; NO 4; PP. 220-225; BIBL. 14 REF.Article

RELIABILITY TESTING OF MICROWAVE TRANSISTORS FOR ARRAY-RADAR APPLICATIONS.DODSON BC JR; WEISENBERGER WH.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 2; PP. 1239-1246; BIBL. 3 REF.Article

GENERALIZED LEAST PTH OPTIMIZATION IN THE MODELING OF MICROWAVE TRANSISTORS.JANSEN RH; KOSTER N.1977; ARCH. ELEKTRON. UBERTRAG.-TECH.; DTSCH.; DA. 1977; VOL. 31; NO 11; PP. 475-477; ABS. ALLEM.; BIBL. 10 REF.Article

IMPROVED CIRCUIT-DEVICE INTERFACE FOR MICROWAVE BIPOLAR POWER TRANSISTORS.BELOHOUBEK EF; PRESSER A; VELORIC HS et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 256-263; BIBL. 8 REF.Article

LOW CURRENT BASE-COLLECTOR BOUNDARY CONDITIONS IN GHZ FREQUENCY TRANSISTORS.ROULSTON DJ.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 10; PP. 845-847; BIBL. 5 REF.Article

PHENOMENES ANORMAUX DANS LES TRANSISTORS UHF AU SILICIUM EN REGIME DES MICRO-COURANTSPALENSKIS VP; LEONTEV GE; YATSIKYAVICHYUS EA et al.1975; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1975; VOL. 20; NO 9; PP. 1917-1923; BIBL. 15 REF.Article

AUTOPROBE TESTING FOR EMITTER-COLLECTOR SPIKES IN MICROWAVE BIPOLAR TRANSISTORS. = ESSAI D'AUTO-SONDE POUR LES COURANTS DE FUITE COLLECTEUR-EMETTEUR DANS LES TRANSISTORS BIPOLAIRES HYPERFREQUENTIELSTAUSCH J.1975; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 11; PP. 1052-1053; BIBL. 2 REF.Article

DESIGNING COMPACT LOG AMPS.LAMAGNA J.1974; MICROWAVES; U.S.A.; DA. 1974; VOL. 13; NO 4; PP. 58-61 (3P.); BIBL. 4 REF.Article

AUTOMATIC LOAD CONTOUR MAPPING FOR MICROWAVE POWER TRANSISTORS.CUSACK JM; PERLOW SM; PERLMAN BS et al.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 2; PP. 1146-1152; BIBL. 6 REF.Article

CALCUL DES CHAMPS DE TEMPERATURE STATIONNAIRES DANS LES TRANSISTORS UHF A EMETTEURS MULTIPLESPETROV BK; KOCHETKOV AI; SYNOROV VF et al.1972; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1972; VOL. 17; NO 10; PP. 2176-2181; BIBL. 7 REF.Serial Issue

DESIGN AND QUALITY ASSURANCE OF MICROWAVE BIPOLAR TRANSISTORS FOR HIGH-RELIABILITY APPLICATIONS.IRIE T; SUZUKI H; NAGASAKO I et al.1976; N.E.C. RES. DEVELOP.; JAP.; DA. 1976; NO 40; PP. 1-9Article

DISPOSITIF POUR LA MESURE DE LA DISTRIBUTION SPECTRALE DES BRUITS DU TYPE 1/FALPHA DES TRANSISTORS N-P-N ET P-N-P DANS LA GAMME DE FREQUENCE DE 20HZ A 30 KHZFRENKEL L YA.1975; IZMERITEL. TEKH.; S.S.S.R.; DA. 1975; NO 6; PP. 37-39; BIBL. 5 REF.Article

LOW NOISE MICROWAVE TRANSISTOR.ISHIKAWA H; IMAI S; MAEDA M et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 4; PP. 157-171; BIBL. 5 REF.Article

A BORON DIFFUSION TECHNIQUE USING DIBORANE FOR THE BASE OF SILICON PLANAR MICROWAVE TRANSISTORS.YUCELEN Y.1974; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1974; VOL. 3; NO 6; PP. 353-357; ABS. ALLEMArticle

A REVIEW OF MICROWAVE TRANSISTORS FOR RADAR APPLICATION.GELNOVATCH VG.1974; IN: NEREM 74 REC.; BOSTON, MASS; 1974; BOSTON; INST. ELECTR. ELECTRON. ENG.; DA. 1974; VOL. 4; PP. 116-125; BIBL. 7 REF.Conference Paper

A 1-WATT 10-GHZ BIPOLAR TRANSISTOR.PANKRATZ JM; KRUGER JB; YOU SUN WU et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 315-326; BIBL. 6 REF.Conference Paper

TRANSISTORS HYPERFREQUENCES A HAUTE FIABILITE1980; INTER ELECTRON.; FRA; DA. 1980; NO 305; PP. 17-19; (2 P.)Article

EXPERIMENTAL MEASUREMENT OF MICROSTRIP TRANSISTOR-PACKAGE PARASITIC REACTANCES.AKELLO RJ; EASTER B; STEPHENSON IM et al.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 5; PP. 367-372; BIBL. 12 REF.Article

MICROWAVE BEAM-LEAD TRANSISTOR.TSURUMIYA K; HIRANO Y; TAKAHASHI A et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 2; PP. 105-124; BIBL. 7 REF.Article

DIFFUSIONSANOMALIEN BEI NPN-SILIZIUM-HOECHSTFREQUENZTRANSISTOREN = ANOMALIES DE LA DIFFUSION DANS DES TRANSISTORS HYPERFREQUENCE A SI NPNWEIDLICH H; KRUGER I; HOERSCHELMANN K et al.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 269-273; ABS. ANGL.; BIBL. 11 REF.Serial Issue

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