MICROWAVE TRANSISTOR REVIEW. I. GAAS FIELD-EFFECT TRANSISTORS. II. MICROWAVE BIPOLAR TRANSISTORS.BARRERA JS; POOLE WE.1976; MICROWAVE J.; U.S.A.; DA. 1976; VOL. 19; NO 2; PP. 28-36 (5P.); BIBL. 2 REF.Article

THE RF PULSE SUSCEPTIBILITY OF UHF TRANSISTORS.WHALEN JJ.1975; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; U.S.A.; DA. 1975; VOL. 17; NO 4; PP. 220-225; BIBL. 14 REF.Article

RELIABILITY TESTING OF MICROWAVE TRANSISTORS FOR ARRAY-RADAR APPLICATIONS.DODSON BC JR; WEISENBERGER WH.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 2; PP. 1239-1246; BIBL. 3 REF.Article

DESIGN AND QUALITY ASSURANCE OF MICROWAVE BIPOLAR TRANSISTORS FOR HIGH-RELIABILITY APPLICATIONS.IRIE T; SUZUKI H; NAGASAKO I et al.1976; N.E.C. RES. DEVELOP.; JAP.; DA. 1976; NO 40; PP. 1-9Article

DISPOSITIF POUR LA MESURE DE LA DISTRIBUTION SPECTRALE DES BRUITS DU TYPE 1/F^ALPHA DES TRANSISTORS N-P-N ET P-N-P DANS LA GAMME DE FREQUENCE DE 20HZ A 30 KHZFRENKEL L YA.1975; IZMERITEL. TEKH.; S.S.S.R.; DA. 1975; NO 6; PP. 37-39; BIBL. 5 REF.Article

LOW NOISE MICROWAVE TRANSISTOR.ISHIKAWA H; IMAI S; MAEDA M et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 4; PP. 157-171; BIBL. 5 REF.Article

A BORON DIFFUSION TECHNIQUE USING DIBORANE FOR THE BASE OF SILICON PLANAR MICROWAVE TRANSISTORS.YUCELEN Y.1974; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1974; VOL. 3; NO 6; PP. 353-357; ABS. ALLEMArticle

A REVIEW OF MICROWAVE TRANSISTORS FOR RADAR APPLICATION.GELNOVATCH VG.1974; IN: NEREM 74 REC.; BOSTON, MASS; 1974; BOSTON; INST. ELECTR. ELECTRON. ENG.; DA. 1974; VOL. 4; PP. 116-125; BIBL. 7 REF.Conference Paper

A 1-WATT 10-GHZ BIPOLAR TRANSISTOR.PANKRATZ JM; KRUGER JB; YOU SUN WU et al.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 315-326; BIBL. 6 REF.Conference Paper

TRANSISTORS HYPERFREQUENCES A HAUTE FIABILITE1980; INTER ELECTRON.; FRA; DA. 1980; NO 305; PP. 17-19; (2 P.)Article

EXPERIMENTAL MEASUREMENT OF MICROSTRIP TRANSISTOR-PACKAGE PARASITIC REACTANCES.AKELLO RJ; EASTER B; STEPHENSON IM et al.1977; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1977; VOL. 25; NO 5; PP. 367-372; BIBL. 12 REF.Article

MICROWAVE BEAM-LEAD TRANSISTOR.TSURUMIYA K; HIRANO Y; TAKAHASHI A et al.1974; FUJITSU SCI. TECH. J.; JAP.; DA. 1974; VOL. 10; NO 2; PP. 105-124; BIBL. 7 REF.Article

DIFFUSIONSANOMALIEN BEI NPN-SILIZIUM-HOECHSTFREQUENZTRANSISTOREN = ANOMALIES DE LA DIFFUSION DANS DES TRANSISTORS HYPERFREQUENCE A SI NPNWEIDLICH H; KRUGER I; HOERSCHELMANN K et al.1972; SIEMENS FORSCH.-U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 269-273; ABS. ANGL.; BIBL. 11 REF.Serial Issue

DEVICE PHYSICS SIMULATION.GRAHAM ED JR; GWYN CR; CHAFFIN RJ et al.1975; MICROWAVE J.; U.S.A.; DA. 1975; VOL. 18; NO 2; PP. 37-40; BIBL. 16 REF.Article

COMPARISON OF NOISE PARAMETERS OF DIFFUSED AND ION-IMPLANTED MICROWAVE TRANSISTORS.LUDVIK S; FROESS P.1974; ELECTRON. LETTERS; G.B.; DA. 1974; VOL. 10; NO 4; PP. 40-41; BIBL. 11 REF.Article

LES DIVERS ASPECTS DE L'USINAGE IONIQUE APPLIQUE AUX SYSTEMES METALLIQUES DES TRANSISTORS BIPOLAIRES HYPERFREQUENCES.PESTIE JP; DUMONTET H; ANDRIEU JP et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 161-170; BIBL. 7 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

RUECKSPUTTERTECHNIK. EINE NEUE TECHNIK ZUR HERSTELLUNG HOECHSTZUVERLAESSIGER HALBLEITERKONTAKTE FUER HOECHSTFREQUENZTRANSISTOREN. = TECHNIQUE D'ATTAQUE PAR PULVERISATION. UNE NOUVELLE TECHNIQUE POUR LA PRODUCTION DE CONTACTS POUR SEMICONDUCTEURS A TRES HAUTE FIABILITE POUR TRANSISTORS HYPERFREQUENCESGLAWISCHNIG H; HOERSCHELMANN K; WEIDLICH H et al.1974; SIEMENS FORSCH- U. ENTWICKL.-BER.; DTSCH.; DA. 1974; VOL. 3; NO 6; PP. 384-389; ABS. ANGL.; BIBL. 15 REF.Article

ELECTRONICALLY COLD MICROWAVE ARTIFICIAL RESISTORSFORWARD RL; CISCO TC.1983; IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES; ISSN 0018-9480; USA; DA. 1983; VOL. 31; NO 1; PP. 45-50; BIBL. 12 REF.Article

AUGMENTATION DE LA PUISSANCE DE SORTIE DES TRANSISTORS GENERATEURS MICROONDES PREVUS POUR FONCTIONNER DANS UNE LARGE GAMME DE FREQUENCESDIKOVSKIJ VI; EVSTIGNEEV AS.1982; RADIOTEHNIKA I ELEKTRONIKA; ISSN 508322; SUN; DA. 1982; VOL. 27; NO 12; PP. 2408-2414; BIBL. 2 REF.Article

SIMPLE S-PARAMETER MEASUREMENT OF BASE SPREADING RESISTANCEUNWIN RT; KNOTT KF.1980; MICROELECTRONICS; ISSN 0026-2692; GBR; DA. 1980; VOL. 11; NO 6; PP. 18-20; BIBL. 4 REF.Article

MESSUNG DER S-PARAMETER VON MIKROWELLENTRANSISTOREN IN STREIFENLEITER-GEHAEUSEAUS-FUEHRUNG = MESURE DES PARAMETRES S DES TRANSISTORS A MICRO-ONDES EN MONTAGE MICROSTRIBENEDIX A.1978; NACHR.-TECH., ELEKTRON.; DDR; DA. 1978; VOL. 28; NO 3; PP. 116-119; BIBL. 8 REF.Article

GAAS POWER F.E.T.S. WITH SEMI-INSULATED GATES.MACKSEY HM; SHAW DW; WISSEMAN WR et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 8; PP. 192-193; BIBL. 5 REF.Article

NOISE LIMITS OF GAAS AND INP MICROWAVE FET_S DETERMINED BY DYNAMIC ANALYSIS.FREY J; MALONEY TJ.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 251-253; BIBL. 7 REF.Conference Paper

SIGNAL AND NOISE PROPERTIES OF GALLIUM ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTORS.PUCEL RA; HAUS HA; STATZ H et al.1975; ADV. ELECTRON. ELECTRON PHYS.; U.S.A.; DA. 1975; NO 8; PP. 195-265; BIBL. 1 P. 1/2Article

TRANSISTORI DI POTENZA PER MICROONDE. = TRANSISTORS DE PUISSANCE POUR HYPERFREQUENCECRUCINIO GA.1975; ELETTROTECNICA; ITAL.; DA. 1975; VOL. 62; NO 9; PP. 745-760; BIBL. 7 REF.Article