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Results 1 to 25 of 328

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Influence of semiconductor thickness on the threshold voltage of an MISFETJERHOT, J.Physica status solidi. A. Applied research. 1986, Vol 96, Num 1, pp K95-K98, issn 0031-8965Article

High-speed enhancement mode InP metal-insulator-semiconductor field-effect transistors exhibiting very high transconductanceANTREASYAN, A; GARBINSKI, P. A; MATTERA, V. D. JR et al.Applied physics letters. 1986, Vol 49, Num 9, pp 513-515, issn 0003-6951Article

Ga0.47In0.53As enhancement- and depletion-mode MISFET's with very high transconductanceSPLETTSTOSSER, J; BENEKING, H.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 4, pp 763-764, issn 0018-9383, 2 p.Article

Surface state density distribution at an Al2O3-InP metal-insulator-semiconductor field-effect transistor measured by the charge pumping techniqueKOBAYASHI, T; ICHIKAWA, T; SAWAI, T et al.Applied physics letters. 1986, Vol 49, Num 6, pp 351-353, issn 0003-6951Article

Emetteur d'ondes radio moyennes à commutateurs, de puissance 200 WALEKSANYAN, A. A; GALAKHOV, V. A; MOZHEJKO, V. L et al.Radiotehnika (Moskva). 1989, Num 5, pp 26-27, issn 0033-8486Article

InP MISFET technology: interface considerationsWAGNER, J. F; OWEN, S. J. T; PRASAD, S. J et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 1, pp 160-165, issn 0013-4651Article

EIN NEUER ANSATZ ZUR APPROXIMATION VON MISFET-KENNLINIEN. = UNE NOUVELLE METHODE POUR L'APPROXIMATION DES CARACTERISTIQUES DE MISFETGAD H.1974; NACHR.-TECH. Z.; DTSCH.; DA. 1974; VOL. 27; NO 9; PP. 352-355; ABS. ANGL.; BIBL. 11 REF.Article

AMPLIFICATEURS PULSES LINEAIRES A AMPLIFICATION REPARTIE A TRANSISTORS METAL-DIELECTRIQUE-SEMICONDUCTEURSKLYARENKO AI.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 5; PP. 109-112; BIBL. 6 REF.Article

TRANSISTORS A EFFET DE CHAMP MIS AU GAASSAKAI Y; ITO T.1974; OYO BUTURI; JAP.; DA. 1974; VOL. 43; NO 10; PP. 1042-1045; BIBL. 7 REF.Article

Vertical enhancement-mode InP MISFET's fabricated on n-type substrateCHU-LIANG CHENG; OTA, Y; TELL, B et al.IEEE electron device letters. 1986, Vol 7, Num 9, pp 549-551, issn 0741-3106Article

A new InP MIS structure with double insulatorsWANG ZHENGXIAO.Chinese physics. 1987, Vol 7, Num 4, pp 1132-1138, issn 0273-429XArticle

Self-aligned inversion-mode InP MISFETOIGAWA, K; UEKUSA, S; SUGIYAMA, Y et al.Japanese journal of applied physics. 1987, Vol 26, Num 10, pp 1719-1721, issn 0021-4922, 1Article

Negative drain conductance in a short-channel silicon MISFETITO, T.Fujitsu scientific and technical journal. 1986, Vol 22, Num 5, pp 434-437, issn 0016-2523Article

Improvements in current gain and breakdown voltage of silicon MIS heterojunction emitter transistorsMORAVVEJ-FARSHI, M. K; GUO, W. L; GREEN, M. A et al.IEEE electron device letters. 1986, Vol 7, Num 11, pp 632-634, issn 0741-3106Article

Analyse numérique des phénomènes de transport dans les dispositifs et structures en semiconducteurs. 3. Modélisation de structures MISABRAMOV, I. I; KHARITONOV, V. V.Inženerno-fizičeskij žurnal. 1986, Vol 50, Num 5, pp 845-852, issn 0021-0285Article

GENERATEURS D'IMPULSIONS RECTANGULAIRES DE LA NANOSECONDE A TRANSISTORS METAL-DIELECTRIQUE - SEMICONDUCTEUR A AVALANCHE ET DE PUISSANCED'YAKONOV VP.1980; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1980; NO 4; PP. 101-102; BIBL. 3 REF.Article

SUBTHRESHOLD RANGE OF MIS-TRANSISTOR UNDER ILLUMINATED CONDITIONSJAKUBOWSKI A; KRAWCZYK S.1978; BULL. ACAD. POLON. SCI., SCI. TECH.; POL; DA. 1978; VOL. 26; NO 10; PP. 191-197; ABS. RUS; BIBL. 6 REF.Article

INSTABILITES DE LA DUREE DE LA PERIODE DES OSCILLATIONS D'UN OSCILLATEUR A BLOCAGE A TRANSISTORS MDSBERZIN LF; YAKIMAKHA AL.1977; IZVEST. VYSSH. UCHEBN ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1977; VOL. 20; NO 8; PP. 91-94; BIBL. 5 REF.Article

TENSION DE SEUIL D'UN TRANSISTOR MDS A PORTE AU SILICIUMGUZEV AA; DEM'YANOV EH A; SINITSA SP et al.1975; MIKROELEKTRONIKA; S.S.S.R.; DA. 1975; VOL. 4; NO 1; PP. 41-46; BIBL. 12 REF.Article

GENERATEUR DE BALAYAGE RAPIDE A TRANSISTORS METAL-DIELECTRIQUE-SEMICONDUCTEUR DE PUISSANCE ET A AVALANCHED'YAKONOV VP.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 2; PP. 136-138; BIBL. 3 REF.Article

INVERSEURS DE MICROPUISSANCE A TRANSISTORS METAL-DIELECTRIQUE-SEMICONDUCTEURYAKIMAKHA AL.1980; RADIOTEKHNIKA; SUN; DA. 1980; VOL. 35; NO 1; PP. 21-25; BIBL. 12 REF.Article

ELEMENT DE MEMOIRE MICROOPTOELECTRONIQUESONIN MS; GUNTSADZE AG; LEMENTUEV VA et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 1; PP. 84-86; BIBL. 2 REF.Article

DER EINFLUSS DER INHOMOGENEN SUBSTRATDOTIERUNG AUF DIE STROM-SPANNUNGSKENNLINIE DES MIS-TRANSISTORS. = L'INFLUENCE DU DOPAGE INHOMOGENE DU SUBSTRAT SUR LA CARACTERISTIQUE COURANT-TENSION DU TRANSISTOR MISFISCHER WJ.1975; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1975; VOL. 25; NO 12; PP. 473-477; ABS. RUSSE ANGL. FR.; BIBL. 6 REF.Article

STEPS AND FINE STRUCTURE IN THE DRAIN CURRENT OF MISFETS AFTER X-IRRADIATION UNDER BIAS.VOLAND G; PAGNIA H.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 3; PP. 211-215; BIBL. 13 REF.Article

TRANSISTORS METAL-DIELECTRIQUE-SEMICONDUCTEUR DANS LES AMPLIFICATEURS DE PUISSANCE POUR FREQUENCES SONORES ET ULTRASONORESBACHURIN VV; D'YAKONOV VP.1980; ELEKTROSVJAZ' (MOSK., 1934); ISSN 0013-5771; SUN; DA. 1980; NO 8; PP. 52-54; BIBL. 6 REF.Article

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