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CMOS-TECHNIK. = TECHNIQUE MOS COMPLEMENTAIRE1974; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1974; VOL. 23; NO 15; PP. 504-505; BIBL. 2 REF.Article

ION IMPLANTATION TECHNOLOGY AND DEVICE APPLICATIONS. = TECHNOLOGIE DE L'IMPLANTATION D'IONS ET APPLICATIONS A DES DISPOSITIFSCOMAS J.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 234-239; BIBL. 17 REF.Article

THE SIMULATION OF N-CHANNEL FIELD-EFFECT TRANSISTORS IN THE CIRCUIT ANALYSIS OF CMOS CIRCUITS.MERCHANT K.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 4; PP. 133-137; ABS. ALLEM.; BIBL. 4 REF.Article

THE EFFECTS OF IMPURITY REDISTRIBUTION ON THE SUBTHRESHOLD LEAKAGE CURRENT IN CMOS-N CHANNEL TRANSISTORS.JEPPSON KO; GATES JL.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 1; PP. 83-85; BIBL. 12 REF.Article

CALCUL DES PARAMETRES ASYMPTOTIQUES D'UNE CHAINE DES COMMUTATEURS FORMES PAR DES TRANSISTORS MOS COMPLEMENTAIRES ET CONNECTES EN CASCADESGORDEEV BK; KRYLOV BA.1974; IZVEST. VYSSH. UCHEBN., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 12; PP. 10-19; BIBL. 6 REF.Article

UNINTENTIONAL WRITING OF A FAMOUS MEMORY DEVICE DURING READING.JEPPSON KO; SVENSSON CM.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 6; PP. 455-457; BIBL. 7 REF.Article

DIE PRUEFUNG VON CMOS-BAUELEMENTEN UND- SCHALTUNGEN.HERRMAN G.1975; ELEKTRONIK; DTSCH.; DA. 1975; VOL. 24; NO 9; PP. 103-106; BIBL. 1 REF.Article

ANALYSE, A L'AIDE D'UNE CALCULATRICE NUMERIQUE, DU FONCTIONNEMENT DES CIRCUITS A FONCTIONS COMPLEXES UTILISANT DES TRANSISTORS MOS COMPLEMENTAIRESBAJKOV V TS; BUGRIMENKO GA; KARMAZINSKIJ AN et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOLEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 3-10; BIBL. 6 REF.Article

UTILISATION DE L'IMPLANTATION IONIQUE POUR LA CREATION D'UN CAISSON P DANS DU SILICIUM N: REALISATION DE TRANSISTORS COMPLEMENTAIRES.GARCIA M; PIAGUET J; ROUSSIN JC et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 278-284; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

COMPUTER ANALYSIS OF THE DOUBLE-DIFFUSED MOS TRANSISTOR FOR INTEGRATED CIRCUITSLIN MC; JONES WN.1973; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 3; PP. 275-283; BIBL. 5 REF.Serial Issue

Effects of switched gate bias on radiation-induced interface trap formationSAKS, N. S; BROWN, D. B; RENDELL, R. W et al.IEEE transactions on nuclear science. 1991, Vol 38, Num 6, pp 1130-1139, issn 0018-9499, 1Conference Paper

A better understanding of the channel mobility of Si MOSFET's based on the physics of quantized subbandsMOU-SHIUNG LIN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2406-2411, issn 0018-9383Article

Accurate determination of doping profile from MOSFET d.c. measurementGUPTA, S.Microelectronics. 1988, Vol 19, Num 6, pp 4-7, issn 0026-2692Article

Numerical simulation of avalanche hot-carrier injection in short-channel MOSFET'sYU-ZHANG CHEN; TING-WEI TANG.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2180-2188, issn 0018-9383Article

The influence of tilted source-drain implants on high-field effects in submicrometer MOSFET'sBAKER, F. K; PFIESTER, J. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2119-2124, issn 0018-9383Article

Effect of interface traps related to mobile charges on silicon n-channel metal/oxide/semiconductor field effect transistors determined by a charge-temperature techniqueHWU, J. B; LIN, C. M; WANG, W. S et al.Thin solid films. 1986, Vol 142, Num 2, pp 183-191, issn 0040-6090Article

Lateral nonuniformities and the MOSFET mobility step near thresholdWIKSTROM, J. A; VISWANATHAN, C. R.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2378-2383, issn 0018-9383Article

The effect of channel hot-carrier stressing on gate-oxide integrity in MOSFET'sIH-CHIN CHEN; JEONG YEOL CHOI; TUNG-YI CHAN et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2253-2258, issn 0018-9383Article

Measurement of MOSFET channel potential profileYEW-TONG YEOW.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2368-2372, issn 0018-9383Article

ZWEIDIMENSIONALE POTENTIALANALYSE IN MIS-STRUKTUREN = ANALYSE BIDIMENSIONNELLE DU POTENTIEL DANS DES STRUCTURES MOSSCHNEIDER J; NOTZOLD A.1983; NACHRICHTENTECHNIK. ELEKTRONIK; ISSN 0323-4657; DDR; DA. 1983; VOL. 33; NO 5; RUS/ENG; PP. 194-196; BIBL. 2 REF.Article

SIMPLIFIED LONG-CHANNEL MOSFET THEORYPIERRET RF; SHIELDS JA.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 2; PP. 143-147; BIBL. 6 REF.Article

EFFECT OF THE ELECTRON TEMPERATURE ON THE GATE-INDUCED CHARGE IN SMALL SIZE MOS TRANSISTORSLEBURTON JP; DORDA G.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 6; PP. 611-615; BIBL. 12 REF.Article

MOSTSM: a physically based charge conservative MOSFET modelMASUDA, H; AOKI, Y; MANO, J et al.IEEE transactions on computer-aided design of integrated circuits and systems. 1988, Vol 7, Num 12, pp 1129-1236, issn 0278-0070Article

The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistorsKUEING-LONG CHEN.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2140-2150, issn 0018-9383Article

Measurement of the average doping concentration in the surface region of the MOS transistorINIEWSKI, K; JAKUBOWSKI, A; NOWAKOWSKI, Z et al.Physica status solidi. A. Applied research. 1987, Vol 100, Num 1, pp K103-K106, issn 0031-8965Article

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