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CMOS-SCHALTER UND -MULTIPLEXER OHNE LATCH UP-EFFEKT. II. = COMMUTATEUR ET MULTIPLEXEUR CMOS SANS EFFET DE VERROUILLAGE. IIFRENZEL D.1978; ELEKTRONIK; DTSCH.; DA. 1978; VOL. 27; NO 2; PP. 69-72Article

CMOS 4K STATIC RAM.ONOYAMA A; KAWAKAMI T; ASAHI K et al.1977; TOSHIBA REV., INTERNATION. ED.; JAP.; DA. 1977; NO 110; PP. 23-29; BIBL. 6 REF.Article

COS/MOS DIVIDERS WITH SYMMETRICAL OUTPUTS.SUMMERS GJ; JONES P.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 3; PP. 40-44 (3P.).Article

CMOS-TECHNIK. = TECHNIQUE MOS COMPLEMENTAIRE1974; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1974; VOL. 23; NO 15; PP. 504-505; BIBL. 2 REF.Article

MICROPOWER SWITCHED-CAPACITOR OSCILLATORVITTOZ EA.1979; I.E.E.E.J. SOLID-STATE CIRCUITS; USA; DA. 1979; VOL. 14; NO 3; PP. 622-624; BIBL. 5 REF.Article

ION IMPLANTATION TECHNOLOGY AND DEVICE APPLICATIONS. = TECHNOLOGIE DE L'IMPLANTATION D'IONS ET APPLICATIONS A DES DISPOSITIFSCOMAS J.1974; I.E.E.E. TRANS. PARTS HYBR. PACKAG.; U.S.A.; DA. 1974; VOL. 10; NO 4; PP. 234-239; BIBL. 17 REF.Article

DIGITAL EVENT TIMER. I. A VERSATILE AND COMPACT C.M.O.S. DESIGN.BIRNIE PA.1976; WIRELESS WORLD; G.B.; DA. 1976; VOL. 82; NO 1492; PP. 32-34Article

ELEKTRONISCHE SUMMENFERNZAEHLEINRICHTUNG F216. = COMPTEURS ELECTRONIQUES D'IMPULSIONS A DISTANCE F216KELLER G.1976; TECH. MITT. A.E.G.-TELEFUNKEN; DTSCH.; DA. 1976; VOL. 66; NO 5; PP. 220-222Article

THE SIMULATION OF N-CHANNEL FIELD-EFFECT TRANSISTORS IN THE CIRCUIT ANALYSIS OF CMOS CIRCUITS.MERCHANT K.1975; NACHR.-TECH. Z.; DTSCH.; DA. 1975; VOL. 28; NO 4; PP. 133-137; ABS. ALLEM.; BIBL. 4 REF.Article

SOLID STATE AUDIO CONTROL. = COMMANDE EN AUDIOFREQUENCE A L'ETAT SOLIDEWHELPLEY G.1974; I.E.E.E. TRANS. BROADCAST TV RECEIVERS; U.S.A.; DA. 1974; VOL. 20; NO 4; PP. 299-310Article

USING COSMOS DIGITAL IC'S.MARSTON RM.1974; RADIO ELECTRON.; U.S.A.; DA. 1974; VOL. 46; NO 1; PP. 47-49Article

LATCH-UP-FREIE (MOS-ANALOG-SCHALTER UND-MULTIPLEXER = MULTIPLEXEUR ET COMMUTATEUR ANALOGIQUE A CMOS1978; UND-ODER-NOR STEUER.-TECH.; DEU; DA. 1978; NO 10; PP. 34-41; (4 P.)Article

GETTING THE MOST OUT OF C-MOS DEVICES FOR ANALOG SWITCHING JOBS.THIBODEAUX E.1975; ELECTRONICS; U.S.A.; DA. 1975; VOL. 48; NO 26; PP. 69-74Article

C.M.O.S. CIRCUIT FOR IMPLEMENTATION OF UNARY OPERATORS IN TERNARY LOGICLLORIS A; PRIETO A; VELASCO J et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 5; PP. 161-162; BIBL. 7 REF.Article

LES C-MOS S'ATTAQUENT AUX MEMOIRES REPROM.1977; INTER ELECTRON.; FR.; DA. 1977; NO 248; PP. 34-36Article

NOISE IMMUNITY OF CMOS INTEGRATED CIRCUITSCHESNEY T; FUNK R.1979; MICROELECTRON. J.; GBR; DA. 1979; VOL. 10; NO 1; PP. 15-26; BIBL. 4 REF.Article

THE EFFECTS OF IMPURITY REDISTRIBUTION ON THE SUBTHRESHOLD LEAKAGE CURRENT IN CMOS-N CHANNEL TRANSISTORS.JEPPSON KO; GATES JL.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 1; PP. 83-85; BIBL. 12 REF.Article

CALCUL DES PARAMETRES ASYMPTOTIQUES D'UNE CHAINE DES COMMUTATEURS FORMES PAR DES TRANSISTORS MOS COMPLEMENTAIRES ET CONNECTES EN CASCADESGORDEEV BK; KRYLOV BA.1974; IZVEST. VYSSH. UCHEBN., RADIOELEKTRON.; S.S.S.R.; DA. 1974; VOL. 17; NO 12; PP. 10-19; BIBL. 6 REF.Article

THRESHOLD SHIFT OF P-CHANNEL TRANSISTORS BY BORON IMPLANTATION AND THE C-V CHARACTERISTICS OF THE CORRESPONDING MOS STRUCTURESFANG RCY.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 25-32; BIBL. 12 REF.Article

THREE-VALUED C.M.O.S. CYCLING GATES.MOUFTAH HT; SMITH KC.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 2; PP. 36-37; BIBL. 4 REF.Article

ANALYSE, A L'AIDE D'UNE CALCULATRICE NUMERIQUE, DU FONCTIONNEMENT DES CIRCUITS A FONCTIONS COMPLEXES UTILISANT DES TRANSISTORS MOS COMPLEMENTAIRESBAJKOV V TS; BUGRIMENKO GA; KARMAZINSKIJ AN et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOLEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 3-10; BIBL. 6 REF.Article

UTILISATION DE L'IMPLANTATION IONIQUE POUR LA CREATION D'UN CAISSON P DANS DU SILICIUM N: REALISATION DE TRANSISTORS COMPLEMENTAIRES.GARCIA M; PIAGUET J; ROUSSIN JC et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 278-284; (APPL. PROCESSUS ELECTRON. IONIQUES. IVEME CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

LES COMMUTATEURS ANALOGIQUES EN C-MOS1979; TOUTE ELECTRON.; FRA; DA. 1979; NO 444; PP. 65-68Article

LA NOVRAM: A LA FOIS RAM ET ROM1978; INTER ELECTRON.; FRA; DA. 1978; NO 273; PP. 44-45Article

BERECHNUNG DES KAPAZITIVEN LASTFAKTORS VON CMOS-SCHALTKREISEN BEI HOHEN FREQUENZEN. = CALCUL DU FACTEUR DE PERTES CAPACITIF DES CIRCUITS CMOS A HAUTE FREQUENCERAUH HC.1977; RADIO FERNSEHEN ELEKTRON.; DTSCH.; DA. 1977; VOL. 26; NO 23-24; PP. 793-794; BIBL. 3 REF.Article

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