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A BORON DIFFUSION TECHNIQUE USING DIBORANE FOR THE BASE OF SILICON PLANAR MICROWAVE TRANSISTORS.YUCELEN Y.1974; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1974; VOL. 3; NO 6; PP. 353-357; ABS. ALLEMArticle

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DEUXIEME DISRUPTION DANS LES TRANSISTORS BIPOLAIRESPIORO Z; SWIT A.1975; ARCH. ELEKTROTECH.; POLSKA; DA. 1975; VOL. 93; NO 3; PP. 503-519; ABS. RUSSE ANGL.; BIBL. 14 REF.Article

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CARATTERISTICA A BASE APERTA NEI TRANSISTORI AL SILICIO. = CARACTERISTIQUE AVEC BASE OUVERTE DES TRANSISTORS AU SILICIUMCARUSO A; SPIRITO P.1976; ALTA FREQ.; ITAL.; DA. 1976; VOL. 45; NO 1; PP. 58-63; BIBL. 5 REF.Article

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X-RAY TOPOGRAPHIC STUDY OF THE HIGH-CONCENTRATION PHOSPHORUS DIFFUSION.STEFANIAY V.1975; ACTA TECH. ACAD. SCI. HUNGAR.; HONGR.; DA. 1975; VOL. 80; NO 3-4; PP. 353-368; ABS. ALLEM. RUSSE; BIBL. 25 REF.Article

ZUR TEMPERATURABHAENGIGKEIT DER HF-KENNGROESSEN VON PLANARTRANSISTOREN = SUR LES VARIATIONS EN FONCTION DE LA TEMPERATURE DES PARAMETRES HAUTE FREQUENCE DE TRANSISTORS PLANAIRESBAUMANN P; SEIDEL G.1973; NACH.-TECH., ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 5; PP. 183-184; (2. WISS. KONG. INGENIEURHOCHSCH. MITTWEIDA. EINSATZ PROZESSMESSTECH. QUALITAETSSICHERUNG ERHOHUNG ZUVERLAESSIGKEIT TECHNOL. PROZESSES; MITTWEIDA; 1973)Conference Paper

MICROWAVE INTERFERENCE EFFECT IN BIPOLAR TRANSISTORS.RICHARDSON RE; PUGLIELLI VG; AMADORI RA et al.1975; I.E.E.E. TRANS. ELECTROMAGN. COMPATIB.; U.S.A.; DA. 1975; VOL. 17; NO 4; PP. 216-219; BIBL. 2 REF.Article

INFLUENCE DE L'IRRADIATION SUR LES COMPOSANTES DU COURANT DE BASE D'UN TRANSISTOR BIPOLAIRE A ELECTRODE DE CHAMPBUTSENS GV; MATVEEV IG; TRILISSKIJ VA et al.1974; LATV. P.S.R. ZINAT. AKAD. VEST., FIZ. TEH. ZINAT. SER.; S.S.S.R.; DA. 1974; NO 1; PP. 30-35; ABS. ANGL.; BIBL. 6 REF.Article

DIFFUSIVITY AT HIGH INJECTION IN EPITAXIAL POWER TRANSISTORS.CONTI M; CORDA G.1977; SOLID. STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 7; PP. 563-566; BIBL. 23 REF.Article

THE USE OF SECONDARY IONIC EMISSION AND NUCLEAR REACTIONS TO DETERMINE THE PARAMETERS IN THE MANUFACTURE OF A PLANAR TRANSISTORMONNIER J; HILLERET H; LIGEON E et al.1972; J. RADIOANAL. CHEM.; NETHERL.; DA. 1972; VOL. 12; NO 1; PP. 353-366; BIBL. 11 REF.; (CHEM. ANAL. CHARGED PART. BOMBARDMENT INT. MEET.; NAMUR BELG.; 1971)Conference Paper

MESSTECHNISCHE BESTIMMUNG DER DYNAMISCHEN EIGENSCHAFTEN VON HOCHFREQUENZTRANSISTOREN = METHODE DE MESURE DES CARACTERISTIQUES DYNAMIQUES DES TRANSISTORS HFBAUMANN P; SEIDEL G.1972; NACHR.-TECH.; DTSCH.; DA. 1972; VOL. 22; NO 9; PP. 285-287Serial Issue

EFFECTS OF EMITTER EDGE DISLOCATIONS ON THE LOW-FREQUENCY NOISE OF SILICON PLANAR N-P-N TRANSISTORSSTOJADINOVIC ND.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 12; PP. 340-342; BIBL. 13 REF.Article

SOME EFFECTS OF LOCALIZED STRESS ON SILICON PLANAR TRANSISTORSRISTIC S; CVEKIC V.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 1; PP. 153-157; ABS. RUS; BIBL. 5 REF.Article

CALCUL DES STRUCTURES DE TRANSISTORS POUR LES CIRCUITS INTEGRESADAMCHUK VG; KOLESOV LN.1972; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1972; VOL. 15; NO 12; PP. 1452-1457; BIBL. 1 REF.Serial Issue

EFFECT OF A SECONDARY PASSIVATING FILM OF SIO₂ DEPOSITED BY CATHODE SPUTTERING ON THE PARAMETERS OF PLANAR TRANSISTORS.ORLINOV VI; GORANCHEV BG; HRISTOV DK et al.1975; BULG. J. PHYS.; BULG.; DA. 1975; VOL. 2; NO 3; PP. 236-246; ABS. RUSSE; BIBL. 7 REF.Article

SUR LE COMPORTEMENT HAUTE FREQUENCE DES TRANSISTORS BIPOLAIRES.REY G; MUNOZ YAGUE A; BAILBE JP et al.1975; ONDE ELECTR.; FR.; DA. 1975; VOL. 55; NO 2; PP. 485-490; ABS. ANGL.; BIBL. 6 REF.Article

BRUIT BASSE FREQUENCE DES TRANSISTORS BIPOLAIRES1972; IN: BRUIT FOND COMPOSANTS ACTIFS SEMI-CONDUCTEURS. COLLOQ. INT. C.N.R.S.; TOULOUSE; 1971; PARIS; C.N.R.S.; DA. 1972; PP. 59-103; BIBL. DISSEM.Conference Proceedings

PARTICULARITES DU COEFFICIENT DE TRANSFERT DE COURANT DES TRANSISTORS PLANARS EN MICROREGIMELEONT'EV GE; PALENSKIS VP; YUKONITE MA et al.1978; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1978; VOL. 23; NO 3; PP. 614-620; BIBL. 15 REF.Article

INSTANTANEOUS CHANGE IN CURRENT GAIN PRODUCED BY BURET NOISE IN A PLANAR TRANSISTOR.KNOTT KF.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 467-468; BIBL. 2 REF.Article

I-V CHARACTERISTICS AT HIGH LEVEL INJECTION TAKING EFFECTIVE JUNCTION POTENTIAL TO DISCUSS BETA -FALL OFF IN PLANAR TRANSISTORSJAIN YK; SHARMA SC.1973; INTERNATION. J. ELECTRON.; G.B.; DA. 1973; VOL. 34; NO 6; PP. 731-735; BIBL. 7 REF.Serial Issue