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A NEW HIGH-POWER VOLTAGE-CONTROLLED DIFFERENTIAL NEGATIVE RESISTANCE DEVICE - THE LAMBDA BIPOLAR POWER TRANSISTORCHING YUAN WU; CHING SHUNG LEE.1983; ELECTRON DEVICE LETTERS; ISSN 0193-8576; USA; DA. 1983; VOL. 4; NO 4; PP. 78-80; BIBL. 3 REF.Article

A NEW HIGH EFFICIENCY TURN-OFF SWITCHING AID FOR POWER TRANSISTORS IN SWITCHING REGULATORSEWING GD; ISBELL RM.1982; IEEE JOURNAL OF SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1982; VOL. 17; NO 6; PP. 1210-1213; BIBL. 3 REF.Article

EVOLUTION DES CIRCUITS D'AIDE A LA COMMUTATION DES TRANSISTORS DE PUISSANCEARCHES JP; FOCH H.1979; ELECTRON. APPL. INDUSTR.; FRA; DA. 1979; NO 276; PP. 63-69; BIBL. 15 REF.Article

INTERFACING POWER DARLINGTON TRANSISTORS.BAKKEN K.1976; NEW ELECTRON.; G.B.; DA. 1976; VOL. 9; NO 11; PP. 38-42 (2P.).Article

CONTROLLI IN TEMPO REALE DELL'AFFIDABILITA DEI TRANSISTORI DI POTENZA AL SILICIO. = CONTROLES EN TEMPS REEL DE LA FIABILITE DES TRANSISTORS DE PUISSANCE AU SILICIUMGALLACE LJ; LUKACH VJ.1975; ALTA FREQ.; ITAL.; DA. 1975; VOL. 44; NO 9; PP. 514-518; BIBL. 6 REF.Article

A COMPUTER MODEL FOR LATERAL THERMAL INSTABILITIES IN POWER TRANSISTORS.SUTHERLAND AD; KENNEDY DP.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 569-572; BIBL. 3 REF.Conference Paper

PATTERN DESIGN OF POWER TRANSISTORSKISAKI H.1973; I.E.E.E. TRANS. ELECTRON. DEVICES; U.S.A.; DA. 1973; VOL. 20; NO 4; PP. 458-460; BIBL. 2 REF.Serial Issue

POWER AND ENERGY LIMITATIONS OF BIPOLAR TRANSISTORS IMPOSED BY THERMAL-MODE AND CURRENT-MODE SECOND-BREAKDOWN MECHANISMS = LIMITATIONS EN PUISSANCE ET EN ENERGIE DE TRANSISTORS BIPOLAIRES IMPOSEES PAR DES PHENOMENES DE "SECONDE DECHARGE" PAR EXCES DE TEMPERATURE ET PAR EXCES DE COURANTBENNETT WP; KUMBATOVIC RA.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 10; PP. 1154-1162; BIBL. 14 REF.Article

IMPROVED CIRCUIT-DEVICE INTERFACE FOR MICROWAVE BIPOLAR POWER TRANSISTORS.BELOHOUBEK EF; PRESSER A; VELORIC HS et al.1976; I.E.E.E. J. SOLID-STATE CIRCUITS; U.S.A.; DA. 1976; VOL. 11; NO 2; PP. 256-263; BIBL. 8 REF.Article

A HIGH POWER MOSFET WITH A VERTICAL DRAIN ELECTRODE AND MESHED GATE STRUCTURE.YOSHIDA I; KUBO M; OCHI S et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 159-162; BIBL. 5 REF.Conference Paper

AUTOMATIC LOAD CONTOUR MAPPING FOR MICROWAVE POWER TRANSISTORS.CUSACK JM; PERLOW SM; PERLMAN BS et al.1974; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; U.S.A.; DA. 1974; VOL. 22; NO 12, PART. 2; PP. 1146-1152; BIBL. 6 REF.Article

CALCUL DES CHAMPS DE TEMPERATURE STATIONNAIRES DANS LES TRANSISTORS UHF A EMETTEURS MULTIPLESPETROV BK; KOCHETKOV AI; SYNOROV VF et al.1972; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1972; VOL. 17; NO 10; PP. 2176-2181; BIBL. 7 REF.Serial Issue

RELIABILITY OF POWER GAAS FIELD-EFFECT TRANSISTORSFUKUI H; WEMPLE SH; IRVIN JC et al.1982; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 3; PP. 395-401; BIBL. 38 REF.Article

LA STRUCTURE "CASCADE" MOS-BIPOLAIRE ET SES APPLICATIONSBERLAND JM.1982; ELECTRON. APPL.; ISSN 0243-489X; FRA; DA. 1982; NO 22; PP. 75-79; BIBL. 1 REF.Article

PRISE EN COMPTE DE LA NON-LINEARITE DES CAPACITES D'UN TRANSISTOR MOS DE PUISSANCE EN REGIME DE GRAND SIGNALSAMOJLOVA TA.1981; IZV. VYSS. UCEBN. ZAVED., RADIOELEKTRON.; ISSN 0021-3470; SUN; DA. 1981; VOL. 24; NO 11; PP. 31-35; BIBL. 7 REF.Article

TORTURE CHAMBER DESTROYS TRANSISTORS FASTERMILLER K.1979; EVAL. ENGNG; USA; DA. 1979; VOL. 18; NO 3; PP. 62-63Article

KUEHLUNG VON HALBLEITERBAUELEMENTEN. II. = LE REFROIDISSEMENT DES COMPOSANTS A SEMI-CONDUCTEURS. II1977; ELEKTRONIK; DTSCH.; DA. 1977; VOL. 26; NO 12; PP. 73-74; BIBL. 3 REF.Article

TRANSISTORS DE PUISSANCE: VARIATION DES TEMPS DE COMMUTATION SUIVANT LES CONDITIONS DE FONCTIONNEMENT.BAUDIER JC.1976; COMPOSANTS MEC. ELECTR. ELECTRON.; FR.; DA. 1976; NO 71; PP. 55-59Article

WARUM MOSFET-LEISTUNGSTRANSISTOREN BESSER SIND. = POURQUOI LES TRANSISTORS DE PUISSANCE A EFFET DE CHAMP SONT-ILS MEILLEURS.GA F.1976; NOUV. TECH.; SUISSE; DA. 1976; NO 2; PP. 59-60Article

HYBRID-COUPLED AMPS: CAN THEY WEATHER A MISMATCH.LA ROSA R.1975; MICROWAVES; U.S.A.; DA. 1975; VOL. 14; NO 2; PP. 44-49 (4P.)Article

PROMOTION DE METHODES NOUVELLES DE CARACTERISATION, DE CONCEPTION ET DE SIMULATION DE TRANSISTORS BIPOLAIRES DE PUISSANCE.LETURCQ P; BOUSQUET M; CAVALIER C et al.1974; DGRST-7371388; FR.; DA. 1974; PP. 1-285; BIBL. 1 P. 1/2; (RAPP. FINAL, COM.: COMPOSANTS CIRC. MICROMINIATURISES, ACTION: TRANSISTORS BIPOLAIRES PUISSANCE)Report

YAMAHA ET LES TRANSISTORS DE PUISSANCE A EFFET DE CHAMP.1974; REV. SON; FR.; DA. 1974; NO 256-257; PP. 74-77Article

HOW TO GET THE MOST OUT OF POWER TRANSISTORS. APPLICATION ADVICE FOR DESIGN ENGINEERS.MIYAGI H; TAKADA S; TANAKA Y et al.1973; JAP. ELECTRON. ENGNG; JAP.; DA. 1973; NO 82; PP. 40-46Article

ANALYSE DE LA STABILITE THERMIQUE DES TRANSISTORS PLANAR AU SILICIUM, DE FORTE ET DE FAIBLE PUISSANCE EN REGIME DYNAMIQUEVLASOV VA; POPOV PI.1973; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1973; VOL. 16; NO 1; PP. 97-103; BIBL. 5 REF.Serial Issue

FABRICATION PROCESSES FOR GAAS POWER FET'S.MACKSEY HM; ADAMS RL.sdIN: ACT. SEMICOND. DEV. MICROWAVES INTEGRATED OPT. BIENN. CORNELL ELECTR. ENG. CONF. 5. PROC.; ITHACA, N.Y.; 1975; S.L.; DA. S.D.; PP. 255-264; BIBL. 7 REF.Conference Paper

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